Thermoelectric properties of Bi2Te3 based thin films fabricated by pulsed laser deposition

2007 ◽  
Vol 1044 ◽  
Author(s):  
Shun Higomo ◽  
Takashi Yagi ◽  
Haruhiko Obara ◽  
Atsushi Yamamoto ◽  
Kazuo Ueno ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Physical Vapor Deposition ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Measuring System ◽  
Vapor Pressures ◽  
Film Composition

AbstractBi2Te3-based thin films were fabricated on glass substrates by the pulsed laser deposition (PLD) method. The vapor pressures of Bi and Te are significantly different, so controlling the stoichiometric composition is difficult when using conventional physical vapor deposition techniques, and the thermoelectric properties of Bi2Te3 films are sensitive to the film composition. PLD is a promising technique for the fabrication of telluride-based films such as Bi2Te3 due to its superior capability for controlling the film composition. Another advantage of PLD is the flexibility that it allows in terms of atmosphere in the reaction chamber; high concentrations of gases such as oxygen or argon can be introduced. We have measured various compositions of Bi2Te3 based films, and have identified the optimal compositions for both n-type and p-type material. The thermal conductivities of these Bi2Te3 films were evaluated by an exact measuring system, and the results were twice as low as those of conventional bulk materials. These results suggest that PLD has significant advantages for the deposition of in-plane Bi2Te3-based thin films.

Enhanced thermoelectric properties of n-type Bi2Te2.7Se0.3 thin films through the introduction of Pt nanoinclusions by pulsed laser deposition

Nano Energy ◽  
2014 ◽  
Vol 8 ◽  
pp. 223-230 ◽  
Author(s):  
Ting Sun ◽  
Majid Kabiri Samani ◽  
Narjes Khosravian ◽  
Kok Ming Ang ◽  
Qingyu Yan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed laser deposition and thermoelectric properties of In- and Yb-doped CoSb3 skutterudite thin films

2011 ◽  
Vol 26 (15) ◽  
pp. 1836-1841 ◽  
Author(s):  
S.R. Sarath Kumar ◽  
A. Alyamani ◽  
J.W. Graff ◽  
T.M. Tritt ◽  
H.N. Alshareef
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Image Position

Abstract

scholarly journals Pulsed Laser Deposition of Epitaxial Non-Doped PbTiO3 Thin Films from PbO–TiO2 Mosaic Targets

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 662
Author(s):  
Joe Sakai ◽  
José Manuel Caicedo Roque ◽  
Pablo Vales-Castro ◽  
Jessica Padilla-Pantoja ◽  
Guillaume Sauthier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Physical Vapor Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Self Control ◽  
Laser Deposition ◽  
Pillar Structure ◽  
Pie Chart ◽  
Areal Ratio

PbTiO3 (PTO) suffers from difficulty in preparing high-density robust bulk ceramics, which in turn has been a bottleneck in thin films growth with physical vapor deposition (PVD) methods. In the present work, we prepared non-doped PTO thin films by a pulsed laser deposition (PLD) method with either a single PTO target or a mosaic target consisting of PbO and TiO2 pie-shaped pieces. On the PTO single target, laser irradiation caused selective ablation of Pb, resulting in Ti-rich cone-shaped pillar structure on the surface, whereas the irradiated surface of PbO and TiO2 pieces was smoother. Epitaxial PTO films deposited on SrTiO3 (001) substrates from the pie-chart targets with PbO:TiO2 areal ratio from 3:5 to 5:3 resulted in composition, crystallinity, flatness, and ferroelectric properties almost independent of the areal ratio. The averaged composition of each film was close to stoichiometric, suggesting a compositional self-control mechanism. For growing epitaxial and high-quality non-doped PTO films, a PbO–TiO2 pie-chart target is advantageous in easiness of handling and stable surface structure.

Strontium Barium Niobate Thin Films Prepared by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
Y. Liu ◽  
C.W. Ong ◽  
P.W. Chan ◽  
C.L. Choy
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Crystallite Orientation ◽  
Strontium Barium ◽  
Film Composition ◽  
X Ray

ABSTRACTStrontium barium niobate Sr0.55Ba0.45Nb2O6 thin films were prepared on Si (111) substrates by pulsed laser deposition (PLD). The film composition was determined as a function of the fluence φ and wavelength λ of the laser beam, the oxygen ambient pressure Po2 and the substrate temperature Ts. The results show that the film composition is very close to that of the target, and is almost independent of φ from 1 to 8 J cm−2, λ = 355, 532 and 1064 nm, Po2 from 0 to 150 mTorr, and Ts from 25 to 700°C. These results suggest that PLD is excellent for preparing SBN films with compositions congruent to that of the target. The x-ray diffraction data show that all the samples deposited at room temperature are amorphous. The x-ray diffraction results also indicate that the samples deposited at 700°C have a tungsten-bronze-(TB-) type structure with preferred crystallite orientation, while the room-temperature-deposited samples after annealing at 800°C for 30 minutes are polycrystalline and have random crystallite orientation.

Thermoelectric Properties of Bi2Te3-Based Thin Films with Fine Grains Fabricated by Pulsed Laser Deposition

2009 ◽  
Vol 48 (8) ◽  
pp. 085506 ◽  
Author(s):  
Haruhiko Obara ◽  
Shun Higomo ◽  
Michihiro Ohta ◽  
Atsushi Yamamoto ◽  
Kazuo Ueno ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Thermoelectric Properties of n-type Sm2-xCexCuO4 Thin Films Prepared by Pulsed Laser Deposition

2006 ◽  
Vol 126 (5) ◽  
pp. 369-373 ◽  
Author(s):  
Yutaka Yoshida ◽  
Tomoki Yoshikawa ◽  
Yusuke Ichino ◽  
Yoshiaki Takai
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

Structural, Mechanical and Tribological Properties of TiN and CrN Films Deposited by Reactive Pulsed Laser Deposition

2004 ◽  
Vol 843 ◽  
Author(s):  
A. R. Phani ◽  
J. E. Krzanowski
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Photoelectron Spectroscopy ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Stoichiometric Composition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Mechanical And Tribological Properties ◽  
Potential Applications

ABSTRACTNitride thin films have potential applications in different areas of silicon device technology, namely as diffusion barrier in metallization schemes, rectifying and ohmic contacts, and gate electrodes in field effect transistors. In the present investigation, TiN and CrN films have been deposited by reactive pulsed laser deposition technique using Ti and Cr targets at 10mTorr background pressure of N2. Si (100) and AISI 440C steel substrates were used for the present study. Films were deposited at different temperatures in the range of 200°C to 600°C. The deposited films exhibited densely packed grain, with smooth and uniform structures. X-ray Photoelectron Spectroscopy (XPS) analysis of the films showed and 50% Ti and 40% of N in TiN films, 45% of Cr and 45% of N in CrN films deposited on Si (111), with the balance mostly oxygen, indicating near stoichiometric composition of the deposited nitride thin films. Hardness of the films changed from 22 GPa at 200°C to 30 GPa at 600°C for TiN, whereas for CrN we obtained 26 GPa at 200°C to 31 GPa at 600°C. The residual stress in the films showed a change from compressive stress at 200°C to tensile stress at 600°C in both the cases. Friction coefficient of the films were measured by pin-on-disk technique for all films, up to the tested limit of 10, 000 cycles at 1 N load and found to be very high (≥ 1) in both cases.

High temperature thermoelectric properties of highly c -axis oriented Bi 2 Sr 2 Co 2 O y thin films fabricated by pulsed laser deposition

2012 ◽  
Vol 21 (8) ◽  
pp. 087306 ◽  
Author(s):  
Shan-Shan Chen ◽  
Shu-Fang Wang ◽  
Fu-Qiang Liu ◽  
Guo-Ying Yan ◽  
Jing-Chun Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Growth of LixLaySrzMnO3 thin films by pulsed laser deposition: complex relation between thin film composition and deposition parameters

2021 ◽  
Vol 127 (6) ◽  
Author(s):  
G. Bimashofer ◽  
S. Smetaczek ◽  
E. Gilardi ◽  
C. W. Schneider ◽  
A. Limbeck ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Inductively Coupled Plasma ◽  
Mass Difference ◽  
Pulsed Laser ◽  
Large Mass ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Film Composition

AbstractLixLaySrzMnO3 thin films of various compositions (x,y,z) have been grown using pulsed laser deposition. The compositions of the films have been studied as a function of deposition temperature, target-to-substrate distance and deposition pressure with respect to different cation ratios of the targets by inductively coupled plasma mass spectrometry. When growing multi-elemental oxide thin films containing lithium (with its large mass difference to other elements), lithium loss is most probably inevitable. But the desired thin film composition can be achieved by selecting specific growth conditions and different target compositions. The experiments also elucidate some of the mechanisms behind the incongruent lithium transfer from the targets to thin films.

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