Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

2008 ◽  
Vol 1068 ◽  
Author(s):  
Yvon Cordier ◽  
Marc Portail ◽  
Sébastien Chenot ◽  
Olivier Tottereau ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Structural Quality ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sic Films

ABSTRACTIn this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

Growth and Characterization of AlGaN/GaN HEMT Structures on 3C-SiC/Si(111) Templates

2008 ◽  
Vol 600-603 ◽  
pp. 1277-1280 ◽  
Author(s):  
Yvon Cordier ◽  
Marc Portail ◽  
Sébastien Chenot ◽  
Olivier Tottereau ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Heat Dissipation ◽  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Structural Quality ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Sic Films ◽  
Thermal Expansion Coefficient Mismatch ◽  
Interesting Alternative

Cubic SiC/Si (111) template is an interesting alternative for growing GaN on silicon. As compared with silicon, this substrate allows reducing the stress in GaN films due to both lower lattice and thermal expansion coefficient mismatch, and can provide better heat dissipation. In this work, we first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these films. Both the structural quality and the electrical behavior of these structures show the feasibility of this approach.

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