Structural Effects of Radiation Damage in Silica Based Glasses

1981 ◽  
Vol 11 ◽  
Author(s):  
A. Manara ◽  
P.N Gibson ◽  
M. Antonini
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Absorption ◽  
Dose Rate ◽  
Etching Rate ◽  
Borosilicate Glasses ◽  
Structural Effects ◽  
Pure Silica ◽  
Transmission Electron ◽  
Effects Of Radiation

ABSTRACTThe results of recent measurements of optical absorption, etching rate and transmission electron microscopy in pure silica and borosilicate glasses are reported and discussed. At dose saturation conditions, the dependence of the optical density associated with the production of single atomic defects from the mass of the impinging particle shows a marked saturation at masses ≥ 20 amu. The corresponding etching rates increase by about 4 times with respect to unirradiated samples. In borosilicate glasses, the temperature dependence of the threshold dose rate of electrons to initiate the nucleation of bubbles shows a marked increase from about 300° to 600° K.

scholarly journals Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy

2020 ◽  
Vol 26 (S2) ◽  
pp. 3064-3066
Author(s):  
Petra Specht ◽  
Ronny Kirste ◽  
Zlatko Sitar ◽  
Travis Anderson ◽  
Andrew Koehler ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dose Rate ◽  
Transmission Electron ◽  
Semiconductor Electronics

Near Bandgap Optical Absorption Measurements on InGaAs/InP Strained Layers with Coarse Structure

1992 ◽  
Vol 263 ◽  
Author(s):  
P. Roura ◽  
J. Bosch ◽  
A. Cornet ◽  
F. Peiroi ◽  
J.R. Morante ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Absorption ◽  
Heavy Hole ◽  
Light Hole ◽  
Absorption Analysis ◽  
Strained Layers ◽  
Coarse Structure ◽  
Transmission Electron ◽  
Absorption Measurements

ABSTRACTOptical absorption measurements have been carried out on compressive InGaAs/FInP strained layers. It is shown that thoptical absorption analysis is a powerful technique in order to study the inhomogeneities of strained layers. The energetic dispersion of the heavy hole relative to the light hole subband σHH/σLH is related with the presence of the coarse structure seen in Transmission Electron Microscopy observations.

Point Defects and Microstructural Stability of Glasses Under Irradiation

1981 ◽  
Vol 6 ◽  
Author(s):  
Marcello Antonini ◽  
Samuel N. Buckley ◽  
Paolo Camagni ◽  
Peter N. Gibson ◽  
Adriano Manara
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Relative Number ◽  
Beam Current ◽  
Microstructural Stability ◽  
Dose Rates ◽  
Pure Silica ◽  
Long Term Storage ◽  
Transmission Electron ◽  
Defect Interactions

ABSTRACTThe results of previous optical absorption experiments aiming to investigate the behaviour of atomic defects in silica based glasses irradiated with various types of particles have been extended to examine the effects of multiple irradiations which take place during long term storage of glasses containing HLW. In addition, point defect clustering phenomena have been investigated by means of high voltage transmission electron microscopy. It has been found that due to the large number of defects already present in amorphous silica prior to irradiations, the contributions of different bombarding particles to the total damage cannot be considered fully additive in terms of the relative number of displaced atoms, but some consideration has to be made of defect interactions and ionization damage. Clustering effects, while being absent in pure silica, are present in borosilicates at large dose rates (≳1022 electrons m−2 sec−1 ). At lower beam current densities and doses comparable to those achieved after 10–100 years of HLW storage, phase separation into a microcrystalline compound has been detected by transmission electron microscopy.

scholarly journals Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers

1995 ◽  
Vol 77 (8) ◽  
pp. 4018-4020 ◽  
Author(s):  
P. Roura ◽  
S. A. Clark ◽  
J. Bosch ◽  
F. Peira ◽  
A. Cornet ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Absorption ◽  
Strained Layers ◽  
Transmission Electron

Phase separation in SiO2–TiO2 gel and glassy films studied by atomic force microscopy and transmission electron microscopy

2001 ◽  
Vol 16 (6) ◽  
pp. 1626-1631 ◽  
Author(s):  
A. Karthikeyan ◽  
Rui M. Almeida
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Phase Separation ◽  
Sol Gel ◽  
Force Microscopy ◽  
Pure Silica ◽  
Atomic Force ◽  
Transmission Electron

An investigation of phase separation phenomena in gel and glassy thin films of silica–titania, with TiO2 contents of 20 and 40 mol%, has been carried out by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The thin films were prepared by spin coating of a precursor sol on silicon wafers. Both the TEM measurements (carried out on scrapped thin film flakes) and the AFM measurements (carried out on films coated on the silicon substrates) for samples with different heat treatments suggest that spinodal-like structural inhomogeneities occur in these samples, unlike the corresponding observations in pure silica films, which are known to be homogeneous. Changes in the microstructure of the films have been noticed with the thermal treatment, in agreement with earlier x-ray photoemission studies. The finer characteristic dimensions of the phase separated regions reveal that silica–titania samples prepared by sol-gel processing exhibit a more intimate mixing of the phases.

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