Near Bandgap Optical Absorption Measurements on InGaAs/InP Strained Layers with Coarse Structure

1992 ◽  
Vol 263 ◽  
Author(s):  
P. Roura ◽  
J. Bosch ◽  
A. Cornet ◽  
F. Peiroi ◽  
J.R. Morante ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Absorption ◽  
Heavy Hole ◽  
Light Hole ◽  
Absorption Analysis ◽  
Strained Layers ◽  
Coarse Structure ◽  
Transmission Electron ◽  
Absorption Measurements

ABSTRACTOptical absorption measurements have been carried out on compressive InGaAs/FInP strained layers. It is shown that thoptical absorption analysis is a powerful technique in order to study the inhomogeneities of strained layers. The energetic dispersion of the heavy hole relative to the light hole subband σHH/σLH is related with the presence of the coarse structure seen in Transmission Electron Microscopy observations.

scholarly journals Analysis by optical absorption and transmission electron microscopy of the strain inhomogeneities in InGaAs/InP strained layers

1995 ◽  
Vol 77 (8) ◽  
pp. 4018-4020 ◽  
Author(s):  
P. Roura ◽  
S. A. Clark ◽  
J. Bosch ◽  
F. Peira ◽  
A. Cornet ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Absorption ◽  
Strained Layers ◽  
Transmission Electron

Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

1986 ◽  
Vol 90 ◽  
Author(s):  
N. Magnea ◽  
F. Dal'bo ◽  
J. L. Pautrat ◽  
A. Million ◽  
L. Di Cioccio ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Bulk Material ◽  
Strained Layers ◽  
Molecular Beam Epitaxial ◽  
Transmission Electron ◽  
Molecular Beam Epitaxial Growth ◽  
Thick Layers

ABSTRACTCD1−xZnxTe alloys of various composition have been grown by the Molecular Beam Epitaxy Technique and characterized by Transmission Electron Microscopy. C(V) measurements and photoluminescence spectroscopy techniques. The quality of the thick layers is comparable to that of bulk material. Thin strained layers have also been grown whose interfaces are structurally good. The recombination within a CdTe well confined between Cd1−xZnxTe barriers is dominated by intrinsic processes.

Solid Phase Epitaxy of Si1-xGex on Si Strained Layers

1989 ◽  
Vol 160 ◽  
Author(s):  
B.J. Robinson ◽  
B.T. Chilton ◽  
P. Ferret ◽  
D.A. Thompson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Crystal Quality ◽  
Solid Phase Epitaxy ◽  
Strained Layers ◽  
Transmission Electron ◽  
Layer Structures

AbstractSingle strained layer structures of up to 30 nm of Si1-xGex. on (100) Si and capped with 30-36 nm of Si have been amorphized by implantation with 120 keV As . The amorphized region, extending to a depth of 130 nm, has been regrown by solid phase epitaxy (SPE) at 600°C. Characterization of the regrown structure by Rutherford backscattering/channeling techniques and transmission electron microscopy indicates that for x < 0.18 the SPE process results in the recovery of strain, while for x > 0.18 there is increasing strain relaxation and a deterioration of crystal quality.

TEM Studies of Alloy Clustering in InAlAs Strained Layers

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
J. R. Morante ◽  
S. A. Clark ◽  
R. H. Williams
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Parameters ◽  
Strained Layers ◽  
Transmission Electron ◽  
Quasiperiodic Structure ◽  
Sample Characteristics ◽  
Inp Substrates

ABSTRACTTransmission electron microscopy studies have been performed to characterise InxAl1−xAS layers grown by Molecular Beam Epitaxy on (100) InP substrates. The first observations of compositional nonuniformities in strained InAlAs layers are reported. The coarse quasiperiodic structure present in each sample has been found to be dependent upon the growth parameters and the sample characteristics such as strain, thickness and x value.

Structural Effects of Radiation Damage in Silica Based Glasses

1981 ◽  
Vol 11 ◽  
Author(s):  
A. Manara ◽  
P.N Gibson ◽  
M. Antonini
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Absorption ◽  
Dose Rate ◽  
Etching Rate ◽  
Borosilicate Glasses ◽  
Structural Effects ◽  
Pure Silica ◽  
Transmission Electron ◽  
Effects Of Radiation

ABSTRACTThe results of recent measurements of optical absorption, etching rate and transmission electron microscopy in pure silica and borosilicate glasses are reported and discussed. At dose saturation conditions, the dependence of the optical density associated with the production of single atomic defects from the mass of the impinging particle shows a marked saturation at masses ≥ 20 amu. The corresponding etching rates increase by about 4 times with respect to unirradiated samples. In borosilicate glasses, the temperature dependence of the threshold dose rate of electrons to initiate the nucleation of bubbles shows a marked increase from about 300° to 600° K.

Synthesis of gold-cadmium selenide co-colloids

1998 ◽  
Vol 13 (4) ◽  
pp. 905-908 ◽  
Author(s):  
Rekha Nayak ◽  
Jane Galsworthy ◽  
Peter Dobson ◽  
John Hutchison
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Optical Absorption ◽  
Cadmium Selenide ◽  
Size Range ◽  
Core Shell ◽  
Optical Absorption Spectra ◽  
Transmission Electron ◽  
Core Shell Structure

Semiconductor-metal co-colloids of CdSey/Au have been prepared by various synthetic pathways. Their microstructure, including that of Au–CdSe(TOPO) co-colloid in a core-shell structure, has been examined by high resolution transmission electron microscopy (HRTEM) and found to be well defined within the 10 nm size range. The optical absorption spectra of the colloids and of various synthesis stages have been obtained.

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