Nb-doped TiO2 films for transparent conductive electrodes with low resistivity deposited by dc magnetron sputtering using a TiO2-x–Nb2O5-x target

2008 ◽  
Vol 1109 ◽  
Author(s):  
Yasushi Sato ◽  
Yuta Sanno ◽  
Nobuto Oka ◽  
Toshihisa Kamiyama ◽  
Yuzo Shigesato
Keyword(s):  
Magnetron Sputtering ◽  
Hall Mobility ◽  
Carrier Density ◽  
Visible Region ◽  
Tio2 Films ◽  
Dc Magnetron Sputtering ◽  
High Transparency ◽  
Doped Tio2 ◽  
Post Annealing ◽  
Transparent Conductive Electrodes

AbstractNb-doped anatase TiO2 films were deposited on unheated glass by dc magnetron sputtering using a slightly reduced TiO2-x–Nb2O5-x target with oxygen flow ratios [O2/(Ar+O2)] in the range from 0.00 to 0.20%. After post-annealing in a vacuum (6 × 10−4 Pa) at 500 and 600 °C for 1 h, the films were crystallized into the polycrystalline anatase TiO2 structure. The resistivity of the both films decreased to 6.3-6.8 × 10−4 Ω·cm with increasing [O2/(Ar+O2)] to 0.10%, where the carrier density and Hall mobility were 1.9-2.0 × 1021 cm−3 and 4.9-5.0 cm2·V−1·s−1, respectively. The films exhibited high transparency of over 60-70% in the visible region of light.

A Study on the Preparation of TiO2-xNx Films by Reactive Deposition and Their Absorption Properties in Visible Region

2005 ◽  
Vol 475-479 ◽  
pp. 1223-1226 ◽  
Author(s):  
Ming Zhao ◽  
Da Ming Zhuang ◽  
Gong Zhang ◽  
Ling Fang ◽  
Min Sheng Wu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Absorption Edge ◽  
Visible Region ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Nitrogen Doped

The nitrogen-doped TiO2 thin films were prepared by mid-frequency alternative reactive magnetron sputtering technique. The N concentration of the nitrogen-doped TiO2 thin films was analyzed by XPS. And the absorption spectra of the films in ultraviolet and visible region were also investigated. The results show that the mid-frequency alternative reactive magnetron sputtering technique is a convenient method for growing TiO2-xNx. Annealing the nitrogen-doped TiO2 thin film in nitrogen atmosphere under 380°C is helpful for increase the concentration of nitrogen in the film, but the ratio of N2 in reactive gas is mainly influence the concentration of nitrogen in the Ti-N bond in the TiO2 film. The increase of the thickness of nitrogen-doped TiO2 films will enhance the absorbability of the film in the ultraviolet and visible region. The wavelength of the absorption edge of TiO2-xNx film with 1.5% nitrogen shift to 441nm from 387nm, which is the absorption edge for undoped TiO2 films.

Ageing effects on electrical resistivity of Nb-doped TiO2 thin films deposited at a high rate by reactive DC magnetron sputtering

2018 ◽  
Vol 455 ◽  
pp. 267-275 ◽  
Author(s):  
Davide Casotti ◽  
Valentina Orsini ◽  
Alessandro di Bona ◽  
Sandra Gardonio ◽  
Mattia Fanetti ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
High Rate ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Doped Tio2 ◽  
Ageing Effects

PREPARATION OF SUPERCONDUCTING Bi–Pb–Sr–Ca–Cu–O FILMS BY DC MAGNETRON SPUTTERING METHOD

1990 ◽  
Vol 04 (13) ◽  
pp. 847-853
Author(s):  
Y.H. WANG ◽  
Y.Z. ZHANG ◽  
Y.Y. ZHAO ◽  
X.G. QIU ◽  
P. XU ◽  
...  
Keyword(s):  
Thin Films ◽  
Critical Current Density ◽  
Magnetron Sputtering ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Dc Magnetron Sputtering ◽  
Sharp Transition ◽  
Interesting Phenomenon ◽  
Post Annealing

Superconducting Bi–Pb–Sr–Ca–Cu–O thin films of zero resistivity temperature 108 K and critical current density of 1000 A/cm2 (at 77 K) were deposited on MgO(100) single-crystal substrates by DC magnetron sputtering. After depositing at 350–400°C and post annealing at 837.5°C for 1–5 hours in air, with different cooling rate we got highly c-axis oriented thin films which show zero resistivity at 103 K, 108 K. The results we got show an interesting phenomenon: the mixture of high and low Tc phase exhibit a low onset, sharp transition and high current density.

Photocatalytic Zn-doped TiO2 films prepared by DC reactive magnetron sputtering

Vacuum ◽  
2007 ◽  
Vol 82 (3) ◽  
pp. 328-335 ◽  
Author(s):  
Wenjie Zhang ◽  
Shenglong Zhu ◽  
Ying Li ◽  
Fuhui Wang
Keyword(s):  
Magnetron Sputtering ◽  
Reactive Magnetron Sputtering ◽  
Tio2 Films ◽  
Reactive Magnetron ◽  
Doped Tio2 ◽  
Dc Reactive Magnetron Sputtering

Investigation on the Effect of the Substrate Temperature on the Photoelectric Properties of the Ga Doped ZnO Film

2016 ◽  
Vol 852 ◽  
pp. 1066-1069 ◽  
Author(s):  
Hong Tao Zhao ◽  
Yi Qiao Shi ◽  
Min Tian
Keyword(s):  
Crystal Structure ◽  
Grain Size ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Silica Glass ◽  
Visible Region ◽  
Zno Film ◽  
Photoelectric Properties ◽  
Doped Zno

The Ga doped ZnO film (GZO) was fabricated via magnetron sputtering on the substrate of silica glass. The effect of substrate temperature on the photoelectric properties of GZO film, such as morphology, grain size, crystal structure and transparency was studied. The results showed us that the crystallinity of GZO film was improved by increasing the substrate temperature . The GZO film exhibited high transmittance (above 80% in the visible region) at the substrate temperature higher than 200°C. The lowest resistivity of 4.45×10-4Ω·cm and highest hall mobility of 11.7 cm2 v-1s-1 were obtained when the substrate temperature was 300°C.

TiO2 films prepared by DC magnetron sputtering from ceramic targets

Vacuum ◽  
2002 ◽  
Vol 68 (1) ◽  
pp. 31-38 ◽  
Author(s):  
Henryk Tomaszewski ◽  
Hilde Poelman ◽  
Diederik Depla ◽  
Dirk Poelman ◽  
Roger De Gryse ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tio2 Films ◽  
Dc Magnetron Sputtering ◽  
Ceramic Targets
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