Novel Inorganic DC Lateral Thin Film Electroluminescent Devices Composed of ZnO Nanorods and ZnS Phosphor

2008 ◽  
Vol 1144 ◽  
Author(s):  
Tomomasa Satoh ◽  
Yuki Matsuzawa ◽  
Hiroaki Koishikawa ◽  
Takashi Hirate

ABSTRACTA novel inorganic thin-film electroluminescence (TFEL) device exhibiting bright EL emission when driven by a low DC voltage is demonstrated. The DC-TFEL device is based on a composite layer in which aluminum-doped ZnO nanorods are vertically embedded in ZnS:Mn as an EL phosphor. The DC driving voltage is then applied laterally to the composite layer via two side electrodes set 3.5 mm apart. The aluminum-doped ZnO nanorods were synthesized on a glass substrate by low-pressure thermal chemical vapor deposition combined with laser ablation, and the composite layer was formed by electron-beam deposition of ZnS:Mn onto the ZnO nanorods. The thickness of the composite layer was about 160 nm. After electrical modification to breakdown a basal conduction ZnO path, the lateral DC-TFEL device exhibited bright EL emission without avalanche breakdown, achieving a luminance of 747 cd/m2 at 4200 V with a luminous efficiency of 9.2×10−3 lm/W.

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 5227-5232 ◽  
Author(s):  
Y. S. Shin ◽  
M. Yoshida ◽  
Y. Akiyama ◽  
N. Imaishi ◽  
S. C. Jung

2002 ◽  
Vol 323 (1-4) ◽  
pp. 171-173 ◽  
Author(s):  
Takashi Ikuno ◽  
Tetsuro Yamamoto ◽  
Motoki Kamizono ◽  
Syunji Takahashi ◽  
Hiroshi Furuta ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 415-420
Author(s):  
A.K.S. Shafura ◽  
N.D. Md Sin ◽  
Mohamad Hafiz Mamat ◽  
S. Ahmad ◽  
Mohamad Rusop Mahmood

In this paper we address sensitivity of SnO2 thin film deposited by thermal chemical vapor deposition in terms of its behavior towards humidity variations. The structural, optical and electrical properties of SnO2 thin film deposit at different substrate temperature grown by thermal chemical vapor deposition (CVD) are also reviewed. FESEM image reveal smallest particle size of SnO2 at substrate temperature 500°C. Pl measurement shows red shift of SnO2 at substrate temperature 500°C. All thin film performing slightly linear sensitivities towards relative humidity (RH%).


2003 ◽  
Vol 799 ◽  
Author(s):  
Takashi Hirate ◽  
Hironori Tanaka ◽  
Shinya Sasaki ◽  
Makoto Ozawa ◽  
Weichi Li ◽  
...  

ABSTRACTHighly oriented ZnO nanorods have been grown on p--Si(111) wafers using a low-pressure thermal CVD method. X-ray diffraction shows that the nanorods are grown with the c-axis normal to the substrate. An electroluminescent device with ITO/ZnS:Mn/nanorod-ZnO/p--Si structure where the ZnS:Mn and ITO layers are deposited by the electron beam deposition method on the ZnO nanorods layer operates stably in DC mode with high luminance.


2013 ◽  
Vol 667 ◽  
pp. 388-392
Author(s):  
S.Z. Muhamed ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop

We investigated the effect of immersion time on optical, electrical properties and surface morphology of nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared by immersion technique. UV-Vis-NIR spectra indicate that the transmittance of the samples decrease with immersion time. Electrical properties study reveals the nanostructured Al doped ZnO thin film at 1 hr shows the lowest resistivity compared to other samples. Surface morphology results as characterized by scanning electron microscope (SEM) show that the Al doped ZnO nanorods quantity increased with immersion time.


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