Chemically and Electrochemically Deposited Thin Films of Tin Sulfide for Photovoltaic Structures

2009 ◽  
Vol 1165 ◽  
Author(s):  
Nini Rose Mathews
Keyword(s):  
Thin Films ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tin Sulfide ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Glass Substrates

AbstractThin films of tin sulfide (SnS) were deposited on TCO-coated glass substrates by pulse electrodeposition. Cyclic voltammetry showed that SnS deposition occurs in the -0.8 V to −1 V range. The films deposited using the potential pulses of -0.95V (Von) and +0.1V (Voff) are of orthorhombic crystal structure with lattice parameters and grain size similar to those of the thin films of orthorhombic structure obtained by chemical deposition. The optical band gap of the films was 1.3 eV. In CdS/SnS heterojunctions an open circuit voltage110 mV, short circuit current density 0.72 mA/cm2 and fill factor of 0.32 are reported here.

Sb2S3/SnSe thin film solar cells by thermal evaporation

2014 ◽  
Vol 1670 ◽  
Author(s):  
José Escorcia-García ◽  
Enue Barrios-Salgado ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Thermal Evaporation ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Glass Substrates ◽  
Cell Structures

ABSTRACTWe report a stable CdS/Sb2S3/SnSe heterojunction thin film solar cell deposited on SnO2:F (FTO) – coated glass substrates. Thermal evaporation at 10-5 Torr with substrate temperature of 400 °C was used to deposit Sb2S3 and SnSe thin films of 450 nm and 160 nm, respectively. Thin film Sb2S3 has an optical band gap (Eg) of 1.48 eV and photoconductivity (σp) of 4x10-7 Ω-1 cm-1 and thin film SnSe has an Eg of 1.28 eV and σp of 2 Ω-1 cm-1. The chemically deposited CdS thin film heated at 400 °C shows an Eg of 2.34 eV and σp of 0.1 Ω-1 cm-1. Stabilized solar cell structures with these thin films, FTO/CdS/Sb2S3/SnSe/C-Ag, showed open circuit voltage (Voc) of 0.60 V, short circuit current density (Jsc) of 5.51 mA/cm2 and power conversion efficiency (η) of 0.96% with a fill factor FF of 0.29. In the absence of the SnSe layer, Jsc decreases to 4.77 mA/cm2.

Preparation and Characterization of Cu-Ga-Se Films of Ordered Vacancy Compound

2003 ◽  
Vol 763 ◽  
Author(s):  
S. Nishiwaki ◽  
S. Siebentritt ◽  
M. Ch. Lux-Steiner
Keyword(s):  
Short Circuit ◽  
Short Circuit Current ◽  
Bottom Layer ◽  
Soda Lime ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Chalcopyrite Structure ◽  
Soda Lime Glass ◽  
Soda Lime Glass Substrate ◽  
Glass Substrates

AbstractCu-Ga-Se films with an orderd vacancy compound (OVC) structure were prepared at substrate temperature about 500 °C by thermal co-deposition. With a preparation under extremely Se excess condition, films of the OVC were synthesized within the compositional ratio of 0.73 ≤ [Ga]/([Cu]+[Ga]) ≤ 0.86 along Cu2Se-Ga2Se3 pseudo binary system. The growth on soda-lime glass substrates improves the crystallinity compared to that on alkali-free glass. An increase in the optical bandgaps of OVC films from 1.85 eV to 1.94 eV was observed with an increase in the Ga content of the films. The deposition of Cu and Se onto Ga2Se3 films resulted in a vertically inhomogeneous film: the bottom layer with the OVC structure and the top layer with the chalcopyrite structure. A solar cell using the CuGa5.0Se8.1 film within a ZnO/CdS/CuGa-Se/Mo/soda-lime glass substrate structure showed an open circuit voltage of 947 mV, an efficiency of 2.2 %, a short circuit current density of 4.5 mA/cm2, and a fill factor of 0.52 (Air Mass 1.5, 0.5 cm2, total area).

Revisiting CdS-PbS Solar Cell Structure

2007 ◽  
Vol 1012 ◽  
Author(s):  
Harumi Moreno Garcia ◽  
O. Gómez-Daza ◽  
J. Campos ◽  
M. T. S. Nair ◽  
P. K. Nair
Keyword(s):  
Solar Cell ◽  
Cell Structure ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Distinct Type ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Cell Structures ◽  
Type V

AbstractCdS and PbS are well known semiconductor materials. Starting in 1969 and into 1970's CdS-PbS cells were reported with open circuit voltage (Voc) up to 450 mV and short circuit current density (Jsc) < 1 mA/cm2. However, further reports are scarce. These two materials are also the most investigated by chemical deposition technique. In this work we revisit this type of photovoltaic junctions and present the photovoltaic behavior of distinct type of cell structures prepared by chemical deposition: glass/CdS/PbS/Ag, SnO2:F/CdS/PbS/Ag, and SnO2:F/CdS/(Bi2S3 or/and CdSe)/PbS/Ag. Depending on the cell type, Voc of > 500 mV or Jsc of > 3 mA/cm2 could be obtained under illumination of 1-3 kW/m2. This work opens up possibilities for developing simple solar cell structures by sequential chemical deposition of semiconductors.

Preparation of Narrow-gap a-Si:H Solar Cells by VHF-PECVD Technique

2010 ◽  
Vol 1245 ◽  
Author(s):  
Do Yun Kim ◽  
Ihsanul Afdi Yunaz ◽  
Shunsuke Kasashima ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Spectral Response ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Hydrogen Flow ◽  
Long Wavelength

AbstractOptical, electrical and structural properties of silicon films depending on hydrogen flow rate (RH), substrate temperature (TS), and deposition pressure (PD) were investigated. By decreasing RH and increasing TS and PD, the optical band gap (Eopt) of silicon thin films drastically declined from 1.8 to 1.63 eV without a big deterioration in electrical properties. We employed all the investigated Si thin films for p-i-n structured solar cells as absorbers with i-layer thickness of 300 nm. From the measurement of solar cell performances, it was clearly observed that spectral response in long wavelength was enhanced as Eopt of absorber layers decreased. Using the solar cell whose Eopt of i-layer was 1.65 eV, the highest QE at long wavelength with the short circuit current density (Jsc) of 16.34 mA/cm2 was achieved, and open circuit voltage (Voc), fill factor (FF), and conversion efficiency (η) were 0.66 V, 0.57, and 6.13%, respectively.

Effects of Deposition Parameters on the Structure and Photovoltaic Performance of Si Thin Films by Metal Induced Growth

2008 ◽  
Vol 1123 ◽  
Author(s):  
Peter T. Mersich ◽  
Shubhranshu Verma ◽  
Wayne A. Anderson ◽  
Rossman F. Giese
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
X Ray ◽  
Metal Induced Growth

AbstractA metal-induced growth (MIG) process was employed to deposit thin films of microcrystalline silicon (μc-Si) for solar cell applications. Due to different grain orientations of the crystals, the absorption coefficient of μc-Si is about 10 times higher than the absorption coefficient of single crystalline Si. The properties of the Si film were investigated resulting from variations in several parameters. A range of Ni and Co thicknesses were examined from 7.5 nm to 60 nm including combinations of the two, while the dc sputtering power was stepped up from 150 W to 225 W. The structure of the resulting film was studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD). SEM of the film revealed that 5 hr of Si deposition at 150 W yields a film thickness of 6.5 μm and a maximum grain size of about 0.6 μm. EDS data showed that at the middle of the Si film the atomic percentage of the Si was 99.17%. XRD data showed that the dominant crystal orientation is {220}. To characterize the photovoltaic properties of the μc-Si, Schottky photodiodes were fabricated. Ni alone as the seed layer resulted in ohmic behavior. With Co only, MIG formed a rectifying contact with open-circuit voltage (V∝). The combination of Co layered over Ni formed better thin films and gave a Voc of 0.24 V and short-circuit current density (Jsc) of 5.0 mA/cm2 since the Co prevents Ni contamination of the top of the grown Si layer.

All-Chemically Deposited Solar Cells with Antimony Sulfide-Selenide/Lead Sulfide Thin Film Absorbers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Sarah Messina ◽  
M.T.S. Nair ◽  
P. K. Nair
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Short Circuit ◽  
Chemical Deposition ◽  
Short Circuit Current ◽  
Transparent Conductive Oxide ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Cell Structures ◽  
Graded Band Gap

AbstractSolar cell structures with Sb2SxSe3-x and PbS as absorber layers were fabricated by chemical deposition on commercial transparent conductive oxide coated glass. The solid solution here was prepared by heating at 250°C a Sb2S3 thin film in contact with a chemically deposited Se-thin film. It has a graded band gap of 1-1.8 eV. A PbS thin film deposited on this layer basically fulfils the role of a p+ layer; its role as an absorber is yet to be studied. Open circuit voltage of 560 mV and short circuit current density ¡Ö 1mA/cm2under 1-3 kW/m2 tungsten halogen radiation are characteristics of these cells. Optimization of the film thicknesses and heating may offer prospects for these materials toward alternate thin film solar cell technology.

scholarly journals Using Cu–Zn–Sn–O Precursor to Optimize CZTSSe Thin Films Fabricated by Se Doping With CZTS Thin Films

2021 ◽  
Vol 9 ◽  
Author(s):  
Qian Li ◽  
Jinpeng Hu ◽  
Yaru Cui ◽  
Juan Wang ◽  
Yu Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Short Circuit ◽  
Surface Characteristics ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Se Doping ◽  
Zinc Tin Oxide ◽  
Czts Thin Films

The copper–zinc–tin oxide (CZTO) precursor was synthesized to avoid sudden volume expansion from CZTO precursor to Cu2ZnSnS4 (CZTS) thin films and smooth CZTSSe thin-film surfaces without pinholes. The CZTO precursor was prepared by coprecipitation and ball milling to form nanoink of CZTO. Based on the CZTO precursor, the CZTS thin film was fabricated and then selenized to make pinhole-free and flat Cu2ZnSn(S,Se)4(CZTSSe) thin films. The results show that the CZTO precursor greatly contributed to elevating the homologous surface characteristics and crystallinity of CZTSSe thin films by controlling selenium temperature, selenium time, and selenium source temperature. Finally, the conversion efficiency of the CZTSSe thin-film solar cell fabricated from the CZTO precursor was 4.11%, with an open-circuit voltage (Voc) of 623 mV, a short circuit current density (Jsc) of 16.02 mA cm−2, and a fill factor (FF) of 41.2%.

Novel SnSb2S4 Thin Films Obtained by Chemical Bath Deposition using Tartaric Acid as Complexing Agent for Their Application as Absorber in Solar Cells

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2035-2042 ◽  
Author(s):  
L.A. Rodríguez-Guadarrama ◽  
I.L. Alonso-Lemus ◽  
J. Campos-Álvarez ◽  
J. Escorcia-García
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Tartaric Acid ◽  
Chemical Bath Deposition ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Xrd Analysis ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Complexing Agent

ABSTRACTTernary Sn-Sb-S thin films with remarkable optical, electrical and structural properties were developed by chemical bath deposition. Tin and antimony chlorides and thioacetamide were used as tin, antimony, and sulfur ion sources, respectively, while tartaric acid was used as a complexing agent. XRD analysis of as-deposited films showed a combination of binary phases of SnS, Sn2S3, and Sb2S3, while after thermal treatment in nitrogen at 400 °C, the films became crystalline showing well-defined reflections of the ternary SnSb2S4. The heating also influenced the morphology, compactness, and thickness of the films. On the other hand, all the films showed an absorption coefficient higher than 104 cm-1, while the optical band gap of the as-deposited film decreased from 1.49 to 1.37 eV after heating at 400 °C. In addition, the photoconductivity of the films prior to heating was of 10-9 Ω-1 cm-1, while after that at 400 °C was of 10-7 Ω-1 cm-1. The evaluation of the ternary film in solar cells gave an open-circuit voltage Voc of 448 mV and short-circuit current density of Jsc of 2.4 mA/cm2.

scholarly journals CdTe-Based Thin Film Solar Cells: Past, Present and Future

Energies ◽  
2021 ◽  
Vol 14 (6) ◽  
pp. 1684
Author(s):  
Alessandro Romeo ◽  
Elisa Artegiani
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Early Years ◽  
Solar Cell Efficiency ◽  
Cell Efficiency

CdTe is a very robust and chemically stable material and for this reason its related solar cell thin film photovoltaic technology is now the only thin film technology in the first 10 top producers in the world. CdTe has an optimum band gap for the Schockley-Queisser limit and could deliver very high efficiencies as single junction device of more than 32%, with an open circuit voltage of 1 V and a short circuit current density exceeding 30 mA/cm2. CdTe solar cells were introduced at the beginning of the 70s and they have been studied and implemented particularly in the last 30 years. The strong improvement in efficiency in the last 5 years was obtained by a new redesign of the CdTe solar cell device reaching a single solar cell efficiency of 22.1% and a module efficiency of 19%. In this paper we describe the fabrication process following the history of the solar cell as it was developed in the early years up to the latest development and changes. Moreover the paper also presents future possible alternative absorbers and discusses the only apparently controversial environmental impacts of this fantastic technology.

scholarly journals Ultrathin Cu(In,Ga)Se2 Solar Cells with Ag/AlOx Passivating Back Reflector

Energies ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 4268
Author(s):  
Jessica de Wild ◽  
Gizem Birant ◽  
Guy Brammertz ◽  
Marc Meuris ◽  
Jef Poortmans ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Electron Microscopic ◽  
Current Increase ◽  
Time Resolved ◽  
Cigs Solar Cells

Ultrathin Cu(In,Ga)Se2 (CIGS) absorber layers of 550 nm were grown on Ag/AlOx stacks. The addition of the stack resulted in solar cells with improved fill factor, open circuit voltage and short circuit current density. The efficiency was increased from 7% to almost 12%. Photoluminescence (PL) and time resolved PL were improved, which was attributed to the passivating properties of AlOx. A current increase of almost 2 mA/cm2 was measured, due to increased light scattering and surface roughness. With time of flight—secondary ion mass spectroscopy, the elemental profiles were measured. It was found that the Ag is incorporated through the whole CIGS layer. Secondary electron microscopic images of the Mo back revealed residuals of the Ag/AlOx stack, which was confirmed by energy dispersive X-ray spectroscopy measurements. It is assumed to induce the increased surface roughness and scattering properties. At the front, large stains are visible for the cells with the Ag/AlOx back contact. An ammonia sulfide etching step was therefore applied on the bare absorber improving the efficiency further to 11.7%. It shows the potential of utilizing an Ag/AlOx stack at the back to improve both electrical and optical properties of ultrathin CIGS solar cells.

Sign in / Sign up

Export Citation Format

Share Document