scholarly journals Ultrafast Self-Assembly of Microscale Particles by Open-Channel Flow

2009 ◽  
Vol 1196 ◽  
Author(s):  
Sun Choi ◽  
Albert P. Pisano ◽  
Tarek I. Zohdi
Keyword(s):  
Self Assembly ◽  
Open Channel ◽  
Microelectromechanical Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Particle Assembly ◽  
Mems Fabrication ◽  
Easy Integration ◽  
Particle Assemblies

AbstractWe developed an ultrafast microfluidic approach to self-assemble microparticles in threedimensions by taking advantage of simple photolithography and capillary action of microparticle-dispersed suspensions. The experimental verifications of the assembly of various sizes of silica microspheres and silica gel microspheres within thin and long open microchannels by using this approach have been demonstrated. We anticipate that the presented technique will be widely used in semiconductor and Bio-MEMS (microelectromechanical Systems) fields because it offers a fast way to control 3D, microscale particle assemblies and also has superb compatibility with photolithography, which can lead to an easy integration of particle assembly with existing CMOS (complementary metal-oxide-semiconductor) and MEMS fabrication processes.

Effects of etching holes on complementary metal oxide semiconductor–microelectromechanical systems capacitive structure

2012 ◽  
Vol 24 (3) ◽  
pp. 310-317 ◽  
Author(s):  
Wei-Hsiang Tu ◽  
Wen-Chang Chu ◽  
Chih-Kung Lee ◽  
Pei-Zen Chang ◽  
Yuh-Chung Hu
Keyword(s):  
Metal Oxide ◽  
Microelectromechanical Systems ◽  
Sacrificial Layer ◽  
Estimation Method ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fringe Field ◽  
Large Area ◽  
Fringing Field

Etching the large area of sacrificial layer under the microstructure to be released is a common method used in microelectromechanical systems technology. In order to completely release the microstructures, many etching holes are often required on the microstructure to enable the etchant to completely etch the sacrificial layer. However, the etching holes often alter the electromechanical properties of the micro devices, especially capacitive devices, because the fringe fields induced by the etching holes can significantly alter the electrical properties. This article is aimed at evaluating the fringe field capacitance caused by etching holes on microstructures. The authors aim to find a general capacitance compensation formula for the fringe capacitance of etching holes by the use of ANSYS simulation. According to the simulation results, the design of a capacitive structure with small etching holes is recommended to prevent an extreme capacitance decrease. In conclusion, this article provides a fringing field capacitance estimation method that shows the capacitance compensation tendency of the design of etching holes; this method is expected to be applicable to the design in capacitive devices of complementary metal oxide semiconductor–microelectromechanical systems technology.

Thermal switch design by using complementary metal–oxide semiconductor MEMS fabrication process

2011 ◽  
Vol 6 (7) ◽  
pp. 534 ◽  
Author(s):  
Jin-Chern Chiou ◽  
Lei-Chun Chou ◽  
You-Liang Lai ◽  
Ying-Zong Juang ◽  
Sheng-Chieh Huang
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Fabrication Process ◽  
Oxide Semiconductor ◽  
Thermal Switch ◽  
Mems Fabrication ◽  
Switch Design

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

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