Effect of the deposition rate on thin films of CuZnAl obtained by thermal evaporation

2010 ◽  
Vol 1276 ◽  
Author(s):  
L. López-Pavón ◽  
E. López-Cuellar ◽  
A. Torres-Castro ◽  
C. Ballesteros ◽  
C. José de Araújo
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Thermal Evaporation ◽  
Deposition Process ◽  
Significant Loss ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Evaporation Source

AbstractThermal evaporation is used to deposit thin films of CuZnAl on silicon substrates. For this purpose, a CuZnAl shape memory alloy is used as evaporation source. The chemical composition and the phases present in the films are evaluated at two different deposition rates: 7 and 0.2 Å/s. The thin films are heat treated to promote the diffusion of the elements and characterized by X-ray Diffraction, Energy Dispersive X-ray Spectroscopy and Scanning Transmission Electron Microscopy (STEM). It is shown that the chemical composition of the thin films is significantly different to that of the CuZnAl alloy used as evaporation source. Moreover, the films produced at 7 Å/s show a significant loss of Zn, contrary to the results obtained using a deposition rate of 0.2 Å/s. It is also observed that the composition varies across the thickness of the film, suggesting that the various alloying elements are evaporated at different rates during the deposition process. Finally the predominant phases present in the films belong to the AlxCuy family.

A Study of Grain Boundaries in High TC Superconducting Yba2Cu3O7-x Thin Films Using High Resolution Analytical Stem

1989 ◽  
Vol 169 ◽  
Author(s):  
D. H. Shin ◽  
J. Silcox ◽  
S. E. Russek ◽  
D. K. Lathrop ◽  
R. A. Buhrman
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Grain Boundaries ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Resolution ◽  
High Tc ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Edx Microanalysis

AbstractGrain boundaries in thin films of high Tc YBa2Cu3O7-x superconductors have been investigated with high resolution scanning transmission electron microscope (STEM) imaging and nanoprobe energy dispersive x-ray (EDX) analysis. Atomic resolution images indicate that the grain boundaries are mostly clean, i.e., free of a boundary layer of different phase or of segregation, and are often coherent. EDX microanalysis with a 10 Å spatial resolution also indicates no composition deviation at the grain boundaries.

Obtaining the structure factors for an epitaxial film using Cu X-ray radiation

2013 ◽  
Vol 46 (6) ◽  
pp. 1749-1754 ◽  
Author(s):  
P. Wadley ◽  
A. Crespi ◽  
J. Gázquez ◽  
M.A. Roldán ◽  
P. García ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Structure Factor ◽  
Tetragonal Symmetry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Structure Factors ◽  
Scanning Transmission

Determining atomic positions in thin films by X-ray diffraction is, at present, a task reserved for synchrotron facilities. Here an experimental method is presented which enables the determination of the structure factor amplitudes of thin films using laboratory-based equipment (Cu Kα radiation). This method was tested using an epitaxial 130 nm film of CuMnAs grown on top of a GaAs substrate, which unlike the orthorhombic bulk phase forms a crystal structure with tetragonal symmetry. From the set of structure factor moduli obtained by applying this method, the solution and refinement of the crystal structure of the film has been possible. The results are supported by consistent high-resolution scanning transmission electron microscopy and stoichiometry analyses.

scholarly journals Effects of Te- and Fe-doping on the superconducting properties in FeySe1-xTex thin films

2021 ◽  
Author(s):  
Yalin Zhang ◽  
Tong Wang ◽  
Zhihe Wang ◽  
Zhongwen Xing
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Interfacial Structure ◽  
Epitaxial Thin Films ◽  
Superconducting Transition ◽  
Transmission Electron ◽  
Fe Content ◽  
Scanning Transmission ◽  
Microscopy Images ◽  
Deposition Technology

Abstract High quality FeySe1−xTex epitaxial thin films have been fabricated on TiO2-buffered SrTiO3 substrates by pulsed laser deposition technology. There is a significant composition deviation between the nominal target and the thin film. Te doping can affect the Se/Te ratio and Fe content in chemical composition. The superconducting transition temperature Tc is closely related to the chemical composition. Fe vacancies are beneficial for the FeySe1−xTex films to exhibit the higher Tc. A 3D phase diagram is given that the optimize range is x = 0.13 − 0.15 and y = 0.73 − 0.78 for FeySe1−xTex films. The anisotropic, effective pining energy and critical current density for the Fe0.72Se0.94Te0.06, Fe0.76Se0.87Te0.13 and Fe0.91Se0.77Te0.23 samples were studied in detail. The scanning transmission electron microscopy images display a regular pattern without obviously scale defects at the interfacial structure.

scholarly journals Effects of Te- and Fe-doping on the superconducting properties in FeySe1−xTex thin films

2022 ◽  
Vol 12 (1) ◽  
Author(s):  
Yalin Zhang ◽  
Tong Wang ◽  
Zhihe Wang ◽  
Zhongwen Xing
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Interfacial Structure ◽  
Epitaxial Thin Films ◽  
Superconducting Transition ◽  
Transmission Electron ◽  
Fe Content ◽  
Scanning Transmission ◽  
Microscopy Images ◽  
Deposition Technology

AbstractHigh quality FeySe1−xTex epitaxial thin films have been fabricated on TiO2-buffered SrTiO3 substrates by pulsed laser deposition technology. There is a significant composition deviation between the nominal target and the thin film. Te doping can affect the Se/Te ratio and Fe content in chemical composition. The superconducting transition temperature Tc is closely related to the chemical composition. Fe vacancies are beneficial for the FeySe1−xTex films to exhibit the higher Tc. A 3D phase diagram is given that the optimize range is x = 0.13–0.15 and y = 0.73–0.78 for FeySe1−xTex films. The anisotropic, effective pining energy, and critical current density for the Fe0.72Se0.94Te0.06, Fe0.76Se0.87Te0.13 and Fe0.91Se0.77Te0.23 films were studied in detail. The scanning transmission electron microscopy images display a regular atomic arrangement at the interfacial structure.

scholarly journals E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

Coatings ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 870
Author(s):  
Nursultan Kainbayev ◽  
Mantas Sriubas ◽  
Kristina Bockute ◽  
Darius Virbukas ◽  
Giedrius Laukaitis
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Deposition Rate ◽  
Photoelectron Spectroscopy ◽  
Cubic Phase ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
X Ray ◽  
Deposition Parameters ◽  
High Concentrations

Scandia alumina stabilized zirconia (ScAlSZ) thin films were deposited using e-beam evaporation, and the effects of deposition parameters on the structure and chemical composition were investigated. The analysis of thin films was carried out using Energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-Ray Diffraction Analysis (XRD) and Raman spectroscopy methods. It was found that the chemical composition of ScAlSZ thin films was different from the chemical composition of the initial powder. Moreover, the Al concentration in thin films depends on the deposition rate, resulting in a lower concentration using a higher deposition rate. XPS analysis revealed that ZrOx, oxygen vacancies, high concentrations of Al2O3 and metallic Al exist in thin films and influence their structural properties. The crystallinity is higher when the concentration of Al is lower (higher deposition rate) and at higher substrate temperatures. Further, the amount of cubic phase is higher and the amount of tetragonal phase lower when using a higher deposition rate.

Tem Investigation of Titanium Silicide Thin Films

1998 ◽  
Vol 523 ◽  
Author(s):  
A. F. Myers ◽  
E. B. Steel ◽  
L. M. Struck ◽  
H. I. Liu ◽  
J. A. Burns
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Scanning Transmission Electron Microscopy ◽  
Titanium Silicide ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
20 Nm

AbstractTitanium silicide films grown on silicon were analyzed by transmission electron microscopy (TEM), electron diffraction, scanning transmission electron microscopy (STEM), and energy dispersive x-ray spectroscopy. The films were prepared by sequential rapid thermal annealing (RTA) at 675 °C and 850 °C of 16-nm-thick sputtered Ti on Si (001) wafers. In some cases, a 20-nm-thick TiN capping layer was deposited on the Ti film before the RTA procedure and was removed after annealing. TEM and STEM analyses showed that the silicide films were less than 0.1 μm thick; the capped film was more uniform, ranging in thickness from ∼ 25 – 45 nm, while the uncapped film ranged in thickness from ∼ 15 – 75 nm. Electron diffraction was used to determine that the capped film contained C54-TiSi2, C49-TiSi2, Ti5Si3, and possibly TiSi, and that the uncapped film contained C49-TiSi2, TiSi, Ti5Si3, unreacted Ti, and possibly C54-TiSi2.

Deposition Rate Effect on Critical Thickness of BaTiO3 Epitaxial Thin Film Grown on SrTiO3 (001)

2007 ◽  
Vol 1034 ◽  
Author(s):  
Masanori Kawai ◽  
Daisuke Kan ◽  
Seiichi Isojima ◽  
Hiroki Kurata ◽  
Seiji Isoda ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Deposition Rate ◽  
Critical Thickness ◽  
High Deposition Rate ◽  
Misfit Dislocations ◽  
Epitaxial Thin Films ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractBaTiO3/SrTiO3(001) epitaxial thin films were prepared at various growth rates by pulsed laser deposition, and their heterostructures were evaluated by synchrotron x-ray diffraction measurements and cross-sectional scanning transmission electron microscopy observations. In a film grown at a low deposition rate (0.01 nm/s), misfit dislocations are found near the interface and a fully relaxed BaTiO3 thin film grows epitaxially on the substrate. On the other hand, a film grown at a high deposition rate (0.04 nm/s) consists of strained and relaxed BaTiO3 lattices. Our results showed that the critical thickness of BaTiO3/SrTiO3(001) epitaxial thin films can be controlled by the deposition rate and that the critical thickness increases with increasing the deposition rate, and by adjusting the deposition rate we were able to prepare epitaxial thin films consisting of fully strained BaTiO3, partially strained BaTiO3 or fully relaxed BaTiO3. We have also achieved the growth controlling of BaTiO3 thin films on SrTiO3(001) substrates with SrRuO3 bottom electrode layer.

High-resolution x-ray imaging of small copper-rich precipitates in steels

1988 ◽  
Vol 46 ◽  
pp. 528-529
Author(s):  
J. R. Michael ◽  
K. A. Taylor
Keyword(s):  
Electron Microscopy ◽  
Thermomechanical Processing ◽  
Atom Probe ◽  
Ferrite Matrix ◽  
Scanning Transmission Electron Microscope ◽  
Probe Field ◽  
X Ray ◽  
Subsequent Transformation ◽  
Transmission Electron ◽  
Scanning Transmission

Although copper is considered an incidental or trace element in many commercial steels, some grades contain up to 1-2 wt.% Cu for precipitation strengthening. Previous electron microscopy and atom-probe/field-ion microscopy (AP/FIM) studies indicate that the precipitation of copper from ferrite proceeds with the formation of Cu-rich bcc zones and the subsequent transformation of these zones to fcc copper particles. However, the similarity between the atomic scattering amplitudes for iron and copper and the small misfit between between Cu-rich particles and the ferrite matrix preclude the detection of small (<5 nm) Cu-rich particles by conventional transmission electron microscopy; such particles have been imaged directly only by FIM. Here results are presented whereby the Cu Kα x-ray signal was used in a dedicated scanning transmission electron microscope (STEM) to image small Cu-rich particles in a steel. The capability to detect these small particles is expected to be helpful in understanding the behavior of copper in steels during thermomechanical processing and heat treatment.

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