Raman Scattering with Nanosecond Resolution During Pulsed Laser Heating of Silicon

1982 ◽  
Vol 13 ◽  
Author(s):  
D. Von Der Linde ◽  
G. Wartmann ◽  
A. Ozols

ABSTRACTWe present time-resolved measurements of spontaneous anti-Stokes and Stokes Raman scattering during pulsed laser heating of crystalline silicon. The time-evolution of the lattice temperature is determined from the measured anti-Stokes/Stokes intensity ratio. In a separate calibration experiment we measure the temperature dependence of the anti-Stokes/Stokes ratio of an oven-heated silicon crystal from 300 K up to 900 K. The phase transition occuring during laser heating is detected by monitoring the changes of the optical reflectivity during laser irradiation. Our data suggest that the phase transition occurs at a lattice temperature of ∼600 K.

1983 ◽  
Vol 23 ◽  
Author(s):  
D. Von Der Linde ◽  
G. Wartmann ◽  
M. Kemmler ◽  
Zhen-He Zhu

ABSTRACTLaser heating of crystalline silicon is investigated with 10 ns laser pulses at 532 nm Raman spectra below the transition threshold show distinct shifts to low frequencies. The absence of line shifts at higher energy is due to a time resolution artifact. Temperatures evaluated from frequency resolved anti-Stokes/Stokes ratios are in agreement with the temperature estimated from line shifts, and provide clear evidence that the surface reaches the melting point. These conclusions are confirmed by independent measurements of the thermal emission. Time-resolved pyrometry also provides the temperature evolution of the liquid phase.


1983 ◽  
Vol 44 (C5) ◽  
pp. C5-107-C5-110
Author(s):  
G. Wartmann ◽  
D. von der Linde

2010 ◽  
Vol 12 (8) ◽  
pp. 083011 ◽  
Author(s):  
Ralf S Kappes ◽  
Chen Li ◽  
Hans-Jürgen Butt ◽  
Jochen S Gutmann

2017 ◽  
Vol 88 (8) ◽  
pp. 084501 ◽  
Author(s):  
G. Aprilis ◽  
C. Strohm ◽  
I. Kupenko ◽  
S. Linhardt ◽  
A. Laskin ◽  
...  

Carbon ◽  
1999 ◽  
Vol 37 (2) ◽  
pp. 231-239 ◽  
Author(s):  
Randy L Vander Wal ◽  
Mun Y Choi

2000 ◽  
Author(s):  
D. H. Chen ◽  
Z. M. Zhang

Abstract A simplified finite element model is built to study the thermal response of the 193-nm pulsed-laser calorimeter. The nonequivalence between pulsed-laser heating and electrical heating is estimated to be 0.46% at the thermocouple locations by comparing the calibration factors for average-power laser heating and electrical heating. This study should help the development of calibration and measurement standards in pulsed energy measurements for deep ultraviolet excimer lasers that are important for photolithographic and materials processing applications.


2009 ◽  
Vol 108 (2) ◽  
pp. 125-130 ◽  
Author(s):  
V. V. Girzhon ◽  
A. V. Smolyakov ◽  
N. G. Babich ◽  
M. P. Semen’ko

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