Raman Scattering with Nanosecond Resolution During Pulsed Laser Heating of Silicon
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ABSTRACTWe present time-resolved measurements of spontaneous anti-Stokes and Stokes Raman scattering during pulsed laser heating of crystalline silicon. The time-evolution of the lattice temperature is determined from the measured anti-Stokes/Stokes intensity ratio. In a separate calibration experiment we measure the temperature dependence of the anti-Stokes/Stokes ratio of an oven-heated silicon crystal from 300 K up to 900 K. The phase transition occuring during laser heating is detected by monitoring the changes of the optical reflectivity during laser irradiation. Our data suggest that the phase transition occurs at a lattice temperature of ∼600 K.
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1980 ◽
Vol 44
(24)
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pp. 1604-1607
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1983 ◽
Vol 44
(C5)
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pp. C5-107-C5-110
2010 ◽
Vol 12
(8)
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pp. 083011
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2017 ◽
Vol 88
(8)
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pp. 084501
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2021 ◽
Vol 12
(2)
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pp. 925-930
2009 ◽
Vol 108
(2)
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pp. 125-130
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