Pulsed Excimer Laser (308 nm) Annealing Of Ion Implanted Silicon and Solar Cell Fabrication

1982 ◽  
Vol 13 ◽  
Author(s):  
D. H. Lowndes ◽  
J. W. Cleland ◽  
W. H Christie ◽  
R. E EBY ◽  
G. E. Jellison ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Damage ◽  
Laser Pulses ◽  
Open Circuit ◽  
Electrical Measurements ◽  
Large Area ◽  
Model Calculations ◽  
Substrate Heating ◽  
Dopant Redistribution

ABSTRACTA pulsed ultraviolet excimer laser (XeCl, 308 nm wavelength, 40 nsec FWHM pulse duration) has been successfully used for laser annealing of both boron- and arsenic-implanted silicon. TEM, SIMS, and sheet electrical measurements are used to characterize specimens. C-V and I-V measurements demonstrate that near-ideal p-n junctions are formed (diode perfection factor A = 1.2). Electrical activation of implanted ions by single laser pulses is essentially complete for energy densities Eℓ≥ 1.4 J/cm2 , far below the threshold for substantial surface damage ∽4.5 J/cm2. Melting model calculations are in good agreement with observed thresholds for dopant redistribution and for epitaxial regrowth. Changes in annealing behavior resulting from multiple (1,2,5) laser pulses are also reported. Finally, we demonstrate the use of scanned overlapping excimer laser pulses for fabrication of large area (2 cm2 ) solar cells with good performance characteristics. In contrast to pulsed ruby laser annealing, high open circuit voltages can be obtained without the use of substrate heating.

Ultra-Shallow Junction Formation by Excimer Laser Annealing of Ultra-Low Energy B Implanted in Si

2003 ◽  
Vol 765 ◽  
Author(s):  
G. Fortunato ◽  
L. Mariucci ◽  
V. Privitera ◽  
A. La Magna ◽  
S. Whelan ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Laser Energy ◽  
Laser Pulses ◽  
Low Energy ◽  
Excimer Laser Annealing ◽  
High Resolution Tem ◽  
Ultra Shallow Junctions ◽  
Dopant Redistribution ◽  
Melt Duration

AbstractFormation of ultra-shallow junctions by excimer laser annealing (ELA) of ultra-low energy (1keV –250 eV) B implanted in Si has been investigated. High resolution TEM has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been studied as a function of the laser energy density (melt depth), the implant dose and the number of laser pulses (melt duration). Under appropriate ELA conditions, ultra-shallow profiles, extending to a depth as low as 35 nm with an abrupt profile (2.5 nm/dec), have been achieved. A significant amount of the implanted dopant was lost from the sample following ELA. However, the dopant that was retained in crystal material was fully activated following rapid re-solidification. We developed a theoretical model, that considers the dopant redistribution during melting and regrowth, showing that the fraction of the implanted dopant not activated during ELA was lost from the sample through out diffusion. The lateral distribution of the implanted B following laser annealing has been studied with 2-D measurements, using selective etching and cross-section TEM on samples where the implanted dopant was confined by using test structures including windows opened in silicon dioxide masks and patterned gate stack structures.

Flat Panel Imagers Based on Excimer Laser Annealed, poly-Si Thin Film Transistor Technology

2001 ◽  
Vol 685 ◽  
Author(s):  
J.P. Lu ◽  
K. Van Schuylenbergh ◽  
R. T. Fulks ◽  
J. Ho ◽  
Y. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Noise Performance ◽  
Large Area ◽  
Flat Panel ◽  
Excimer Laser Annealing ◽  
Flat Panel Imagers ◽  
Si Thin Film

AbstractPulsed Excimer-Laser Annealing (ELA) has become an important technology to produce high performance, poly-Si Thin Film Transistors (TFTs) for large area electronics. The much-improved performance of these poly-Si TFTs over the conventional hydrogenated amorphous Si TFTs enables the possibility of building next generation flat panel imagers with higher-level integration and better noise performance. Both the on-glass integration of peripheral driver electronics to reduce the cost of interconnection and the integration of a pixel level amplifier to improve the noise performance of large area imagers have been demonstrated and are discussed in this paper.

Effect of excimer laser annealing on the structural properties of silicon germanium films

2004 ◽  
Vol 19 (12) ◽  
pp. 3503-3511 ◽  
Author(s):  
Sherif Sedky ◽  
Jeremy Schroeder ◽  
Timothy Sands ◽  
Tsu-Jae King ◽  
Roger T. Howe
Keyword(s):  
Surface Roughness ◽  
Excimer Laser ◽  
Silicon Germanium ◽  
Laser Annealing ◽  
Chemical Vapor ◽  
Laser Pulses ◽  
Film Structure ◽  
Excimer Laser Annealing ◽  
Pressure Chemical ◽  
Columnar Grain

We investigated the use of a pulsed excimer laser having a wavelength of 248 nm, a pulse duration of 38 ns, and an average fluence between 120 and 780 mJ/cm2 to locally tailor the physical properties of Si1−xGex (18% < x < 90%) films deposited by low-pressure chemical vapor deposition at temperatures between 400 and 450 °C. Amorphous as-deposited films showed, after laser annealing, strong {111} texture, a columnar grain microstructure, and an average resistivity of 0.7 mΩ cm. Atomic force microscopy indicated that the first few laser pulses resulted in a noticeable reduction in surface roughness, proportional to the pulse energy. However, a large number of successive pulses dramatically increased the surface roughness. The maximum thermal penetration depth of the laser pulse is demonstrated to depend on the fluence and the film structure being either polycrystalline or amorphous. Finally, a comparison between excimer laser annealing and metal-induced crystallization and rapid thermal annealing is presented.

Activation of N-Acceptor in MOCVD-ZnSe by Excimer Laser Annealing

1992 ◽  
Vol 281 ◽  
Author(s):  
Nallan Padmapani ◽  
G. F. Neumark ◽  
N. Taskar ◽  
D. Dorman
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Free Exciton ◽  
Plasma Source ◽  
Exciton Peak ◽  
Electrical Measurements ◽  
Excimer Laser Annealing ◽  
Recent Success ◽  
Peak Intensity ◽  
P Type

ABSTRACTThe recent success in obtaining blue-green diode lasers using ZnSe-based heterostructures has been mainly due to the successful p-doping of ZnSe using a N plasma source in an MBE system. P-type ZnSe can also be grown by MOCVD, using NH3 as the dopant source. Dopant concentrations of up to 1018 cm−3 have been obtained but net acceptor concentrations are in the range of only about 1015 cm−3 Activation of the remaining N has been achieved to some extent (NA -ND∼3*1016cm−3 ) by rapid thermal annealing. However, this has had limited success. We have used fast surface annealing by an excimer laser to activate the N. We have observed an increase in the ratio of Acceptor Bound Exciton peak intensity to Free Exciton peak intensity on annealing and this effect increases as we increase the laser power density from 10 to 30 MW/cm2. Electrical measurements ( C-V ) give a net acceptor concentration of ∼2*1016 cm−3 and thus confirm the increase in carrier concentration after annealing.

Large Area Doping Process for Fabrication of p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Author(s):  
Genshiro KAWACHI ◽  
Takashi AOYAMA ◽  
Takaya SUZUKI ◽  
Akio MIMURA ◽  
Yasunori OHNO ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Xecl Excimer Laser

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

1990 ◽  
Vol 29 (Part 2, No. 12) ◽  
pp. L2370-L2372 ◽  
Author(s):  
Genshiro Kawachi ◽  
Takashi Aoyama ◽  
Takaya Suzuki ◽  
Akio Mimura ◽  
Yasunori Ohno ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Ion Source ◽  
Large Area ◽  
Excimer Laser Annealing ◽  
Si Thin Film ◽  
Xecl Excimer Laser

Advanced Excimer Laser Annealing of Thin Poly Si Films after Solid Phase Grain Growth

1989 ◽  
Vol 146 ◽  
Author(s):  
Takashi Noguchi ◽  
Kazuhiro Tajima ◽  
Yasushi Morita
Keyword(s):  
Electronic Properties ◽  
Grain Growth ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Liquid Crystal Display ◽  
Silicon Film ◽  
Dendritic Structure ◽  
Large Area ◽  
Excimer Laser Annealing

ABSTRACTThin silicon films with dendritic large grains can be obtained by Si+ or P+ implantation and subsequent low temperature annealing of the silicon film. We tried further exposing the films with an excimer laser after the grain growth. As a result, improvement of electronic properties such as high carrier mobility or low resistivity were obtained. By TEM observation, polycrystalline grains with a dendritic structure did not melt after laser annealing and it was found that the improvement of electronic properties were achieved mainly due to the improvement of crystallinity by U-V(Ultra-Violet) reflectance, ESR(Electron Spin Resonance) analysis and TFT characteristics. We are convinced that this advanced laser pulse annealing method is an ideal RTA process in the near future and is expected to be applicable to ULSI processes for inter connects, high density stacked SRAM and for large area electronics on glass such as a contact line sensor or LCD(Liquid Crystal Display).

Substrate Heating Effects in Excimer Laser Planarization of Aluminum

1989 ◽  
Vol 158 ◽  
Author(s):  
Robert J. Baseman ◽  
Joseph C. Andreshak
Keyword(s):  
Excimer Laser ◽  
Damage Threshold ◽  
Sample Temperature ◽  
Temperature Sensitive ◽  
Model Calculations ◽  
Substrate Heating ◽  
Temperature Distributions ◽  
Heating Effects ◽  
Substrate Temperatures ◽  
Sample Damage

ABSTRACTSubstantial improvements in excimer laser planarization processes are observed with substrate heating. Cavities, associated with filling of high aspect ratio vias at low substrate temperature, can be eliminated by substrate heating. Damage associated with pulse overlap regions can be temperature sensitive, and is reduced as substrate temperatures areincreased. While required fluences for planarization and sample damage both decrease as the sample temperature increases, the relative insensitivity of the damage threshold generally results in larger process windows at higher temperatures. We also report model calculations of the effect of substrate heating on sample temperature distributions and the durations of the laser driven melts.

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