Application of a Thermobalance for studying Deposition kinetics of Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
Jerry Czarnecki ◽  
David Thumim
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Kinetics ◽  
Oxidation Rates ◽  
Exponential Increase ◽  
Hot Filament ◽  
Kinetics Of

ABSTRACTWeight recording using a thermobalance type Cahn TG-171 has been applied to study Hot, Filament Enhanced Chemical Vapor Deposition (HFCVD) of carbon films from methane. Changes in the deposition rates during each individual process may indicate four stages of the deposition kinetics: 1- generation of nuclei (slow, linear); 2- growth on nuclei (exponential increase); 3- aggregation of crystals (slowing); 4- growth on the surface of diamond film, completely covering the substrate (linear). An attempt to determine the concentration of graphite in the deposited layer, based on differences in oxidation rates of diamond and graphite has been proposed, as supplementary to X-ray diffraction and Raman spectroscopy.

Growth and oxidation of boron-doped diamond films

1995 ◽  
Vol 10 (6) ◽  
pp. 1448-1454 ◽  
Author(s):  
E.N. Farabaugh ◽  
L. Robins ◽  
A. Feldman ◽  
Curtis E. Johnson
Keyword(s):  
Boron Concentration ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Boron Doping ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
Boron Doped Diamond ◽  
Oxidation Rates ◽  
Boron Doped ◽  
Hot Filament

Boron-doped diamond films have been grown by the hot filament chemical vapor deposition process. The feed gas was a mixture of argon, bubbled through a solution of B2O3 in ethanol, and hydrogen. The highest growth rate was 0.7 μm/h. The boron concentration in the films depended on the concentration of B2O3 in the ethanol. The highest boron doping level, as measured by secondary ion mass spectroscopy, was 6300 atomic ppm. Raman spectroscopy and x-ray diffraction both confirmed the presence of crystalline diamond in the films. The frequency of the diamond Raman line decreased with increasing boron concentration. This shift may arise from an interaction of the charged carriers (holes) produced by the boron doping and the Raman-active optic phonon. The oxidation rates of doped and undoped films were measured by thermogravimetric analysis at 700 °C in flowing high purity oxygen. Films with a boron concentration of 6300 ppm oxidized at one-tenth the rate of undoped diamond. A layer of B2O3, detected on the surface of an oxidized B-doped film, is believed to act as a protective barrier that decreases the oxidation rate.

STUDY OF EPITAXIAL GROWTH OF DIAMOND FILM ON HETERO-MATERIAL SUBSTRATE

2005 ◽  
Vol 19 (22) ◽  
pp. 1087-1093
Author(s):  
YUAN LIAO ◽  
QINGXUAN YU ◽  
GUANZHONG WANG ◽  
RONGCHUAN FANG
Keyword(s):  
Epitaxial Growth ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Crystals ◽  
Initial Nucleation ◽  
Hot Filament

We study the epitaxial growth mechanism of diamond films using various hetero-materials as substrates in a hot-filament chemical vapor deposition (HFCVD) chamber. The same parameters were maintained in the nucleation and growth processes of diamond films on these substrates. The experimental results showed that the dominant orientation of diamond crystals has a relation with that of substrates identified by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The preference of diamond films on non-diamond substrates is explained as heteroepitaxial growth. We think that the initial nucleation process is the key to the heteroepitaxial growth of diamond film.

Neutron irradiation and annealing of 10B doped chemical vapor deposited diamond films

1995 ◽  
Vol 10 (10) ◽  
pp. 2523-2530 ◽  
Author(s):  
S.A. Khasawinah ◽  
Galina Popovici ◽  
J. Farmer ◽  
T. Sung ◽  
M.A. Prelas ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Unirradiated Sample ◽  
High Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Hot Filament

10B doped diamond films grown by hot filament chemical vapor deposition were neutron irradiated at moderately high fluence levels. The as-irradiated and annealed samples, along with an unirradiated sample, were analyzed using Raman spectroscopy and x-ray diffraction. It was found that a non-diamond amorphous phase was formed on irradiation. This phase transformed back to diamond on annealing. No graphite formation was observed. A comparison with nanodiamond powder was made. A similarity between irradiated diamond films and nanocrystalline diamond powder is discussed.

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment

1995 ◽  
Vol 10 (7) ◽  
pp. 1764-1771 ◽  
Author(s):  
D. Ganesana ◽  
S.C. Sharma
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hydrogen Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Planes ◽  
Hot Filament

We have studied effects of hydrogen on texture in diamond films grown by hot filament assisted chemical vapor deposition by utilizing x-ray diffraction (XRD). We present results for the relative intensities of the XRD peaks originating from the (111). (220), and (400) crystallographic planes as functions of CH4/H2 makeup during growth and post-growth H2 treatment of the films. The texture of the films can be controlled by varying composition of the CH4/H2 mixture during growth and also by subjecting films to hydrogen treatment. The complementary characterization of these films by XRD, Raman spectroscopy, and positron annihilation techniques exemplifies a correlation among film texture, diamond contcnt, and dcnsity of the microvoids in the films.

Characterization of Stress and Mosaicity in Homoepitaxial Diamond Films

1995 ◽  
Vol 416 ◽  
Author(s):  
W. Brock Alexander ◽  
Paul H. Holloway ◽  
Patrick Doering ◽  
Robert Linares
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Natural Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hot Filament ◽  
Secondary Ion

ABSTRACTDiamond films were grown on (100) and (110) oriented natural diamond substrates by hot filament assisted chemical vapor deposition (HFCVD) to thicknesses of 7 to 100μm. Raman spectroscopy was used to measure tensile stresses of up to ∼2GPa for some of the (110) films. The development of stress was attributed to the incorporation of impurities (Re, Mo, and H). Impurity concentrations were greater at the interface than through the film thickness. Up to∼11% H and 50ppm Re were measured in the films with secondary ion mass spectrometry (SIMS). Homoepitaxial diamond films were further characterized using a seven crystal high resolution x-ray diffraction system. This new characterization tool allowed the separation of the effects of mosaicity from those of variation in lattice parameter.

scholarly journals The Cyclic Oxidation and Hardness Characteristics of Thermally Exposed Titanium Prepared by Inductive Sintering-Assisted Powder Metallurgy

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 104
Author(s):  
Fahamsyah H. Latief ◽  
El-Sayed M. Sherif ◽  
Agus S. Wismogroho ◽  
Wahyu B. Widayatno ◽  
Hany S. Abdo
Keyword(s):  
Powder Metallurgy ◽  
Single Phase ◽  
Oxide Scales ◽  
Cyclic Tests ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxidation Rates ◽  
Parabolic Law ◽  
Kinetics Of ◽  
Hardness Values

The oxidation and hardness of thermally exposed titanium (Ti) prepared using inductive sintering-assisted powder metallurgy was evaluated through cyclic tests in air at 700–900 °C for 100 h (5 cycles). In general, the oxidation kinetics of the Ti samples followed the parabolic law and their oxidation rates increased with increasing oxidation temperatures. The rutile form of titanium dioxide (TiO2) was detected by X-ray diffraction in the oxide scales after oxidation at 700 °C and 900 °C. Furthermore, the TiO2 grain size and thickness were significantly influenced by an increase in the oxidation temperature. Lastly, the formation of rutile as a single-phase on the surface of oxidized Ti enhanced the hardness of the oxide scales, whereas the substrate had lower hardness values than the oxide scales due to diffusion of Ti atoms at the surface to form the TiO2 oxide scales.

Residual stresses in chemical vapor deposition free-standing diamond films by X-ray diffraction analyses

2000 ◽  
Vol 288 (2) ◽  
pp. 217-222 ◽  
Author(s):  
O Durand ◽  
R Bisaro ◽  
C.J Brierley ◽  
P Galtier ◽  
G.R Kennedy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Residual Stresses ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray

Effects of Seeding Over the Microstructure and Stresses of Diamond Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
S. Gupta ◽  
G. Morell ◽  
R. S. Katiyar ◽  
D. R. Gilbert ◽  
R. K. Singh
Keyword(s):  
Electron Cyclotron Resonance ◽  
Raman Band ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Interfacial Stress ◽  
Intrinsic Stress ◽  
Seeding Density ◽  
X Ray Diffraction ◽  
Total Stress ◽  
X Ray

AbstractWe have studied diamond films grown by electron cyclotron resonance-assisted chemical vapor deposition (ECR-CVD) at low pressure (1.0 Torr) and temperatures (550–700 °C). These films were grown on seeded Si (111) substrates with different diamond seed densities (0.225, 1.5, 2.3, and 3.1 × 109 nuclei/cm2). Scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy (RS) were employed to investigate the crystalline quality, diamond yield, and stresses developed in the films as a function of seeding density. Thermal interfacial stress, interactions across grain boundaries, and internal stress were considered in order to account for the total stress observed from the Raman band. We present correlations among seed density, relative amount of non-sp3 phase, O/C ratio, and total intrinsic stress.

Particle-Assisted Oriented Deposition of Diamond Thin Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Dong-Gu Lee ◽  
Rajiv K. Singh
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray ◽  
Diamond Particles ◽  
Film Synthesis ◽  
Diamond Powders ◽  
Hot Filament

AbstractWe have developed a method for <111> oriented diamond film synthesis using micron-sized diamond particles. Different size of diamond powders were electrophoretically seeded on silicon substrates using diamond suspensions in organic solvents (acetone, methanol, and ethanol). Diamond suspension in acetone was found to be the best for obtaining uniform diamond seeding by electrophoresis. The thickness of diamond seeded films was changed by varying the applied voltage to observe the effect on the orientation of diamond particles. Then diamond films were deposited by the hot filament chemical vapor deposition (HFCVD) process. A preferred orientation with <111> direction normal to the substrate was obtained for monolayer coatings. The surface morphology, crystal orientation, and quality of diamond films were investigated using scanning electron microscopy, x-ray diffractometry, and Raman spectroscopy.

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