Characterization of Stress and Mosaicity in Homoepitaxial Diamond Films

1995 ◽  
Vol 416 ◽  
Author(s):  
W. Brock Alexander ◽  
Paul H. Holloway ◽  
Patrick Doering ◽  
Robert Linares
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Natural Diamond ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Hot Filament ◽  
Secondary Ion

ABSTRACTDiamond films were grown on (100) and (110) oriented natural diamond substrates by hot filament assisted chemical vapor deposition (HFCVD) to thicknesses of 7 to 100μm. Raman spectroscopy was used to measure tensile stresses of up to ∼2GPa for some of the (110) films. The development of stress was attributed to the incorporation of impurities (Re, Mo, and H). Impurity concentrations were greater at the interface than through the film thickness. Up to∼11% H and 50ppm Re were measured in the films with secondary ion mass spectrometry (SIMS). Homoepitaxial diamond films were further characterized using a seven crystal high resolution x-ray diffraction system. This new characterization tool allowed the separation of the effects of mosaicity from those of variation in lattice parameter.

A study of texture in diamond films as functions of methane concentration during chemical vapor deposition and post-growth hydrogen treatment

1995 ◽  
Vol 10 (7) ◽  
pp. 1764-1771 ◽  
Author(s):  
D. Ganesana ◽  
S.C. Sharma
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hydrogen Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystallographic Planes ◽  
Hot Filament

We have studied effects of hydrogen on texture in diamond films grown by hot filament assisted chemical vapor deposition by utilizing x-ray diffraction (XRD). We present results for the relative intensities of the XRD peaks originating from the (111). (220), and (400) crystallographic planes as functions of CH4/H2 makeup during growth and post-growth H2 treatment of the films. The texture of the films can be controlled by varying composition of the CH4/H2 mixture during growth and also by subjecting films to hydrogen treatment. The complementary characterization of these films by XRD, Raman spectroscopy, and positron annihilation techniques exemplifies a correlation among film texture, diamond contcnt, and dcnsity of the microvoids in the films.

Application of a Thermobalance for studying Deposition kinetics of Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
Jerry Czarnecki ◽  
David Thumim
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Kinetics ◽  
Oxidation Rates ◽  
Exponential Increase ◽  
Hot Filament ◽  
Kinetics Of

ABSTRACTWeight recording using a thermobalance type Cahn TG-171 has been applied to study Hot, Filament Enhanced Chemical Vapor Deposition (HFCVD) of carbon films from methane. Changes in the deposition rates during each individual process may indicate four stages of the deposition kinetics: 1- generation of nuclei (slow, linear); 2- growth on nuclei (exponential increase); 3- aggregation of crystals (slowing); 4- growth on the surface of diamond film, completely covering the substrate (linear). An attempt to determine the concentration of graphite in the deposited layer, based on differences in oxidation rates of diamond and graphite has been proposed, as supplementary to X-ray diffraction and Raman spectroscopy.

Fabrication and Applications of Ultra-Smooth Composite Diamond Coated WC-Co Drawing Dies

2011 ◽  
Vol 175 ◽  
pp. 233-238 ◽  
Author(s):  
Bin Shen ◽  
Fang Hong Sun ◽  
Zhi Ming Zhang ◽  
He Sheng Shen ◽  
Song Shou Guo
Keyword(s):  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Entry Zone ◽  
X Ray ◽  
Nano Crystalline ◽  
Composite Diamond ◽  
And Performance ◽  
Hot Filament ◽  
Drawing Dies

Micro/nano-crystalline multilayered ultra-smooth diamond (USCD) films are deposited on the interior-hole surface of conventional WC-Co drawing dies with a combined process consisting of the hot filament chemical vapor deposition (HFCVD) method and polishing technique. Scanning electron microscopy (SEM), surface profilemeter, Raman spectroscopy and X-ray diffraction (XRD) are employed to provide a characterization of as-deposited USCD films. The results exhibit that as-deposited USCD films present an ultra-smooth surface, its surface roughness values (Ra) in the entry zone, drawing zone and bearing zone are measured as 25.7 nm, 23.3 nm and 25.5 nm respectively. Furthermore, the working lifetime and performance of as-fabricated USCD coated drawing dies are examined in producing copper tubes with hollow sinking, fixed plug and floating plug. The results show that the lifetime of USCD coated drawing is as more than 30 times as that of WC-Co drawing dies in the drawing process with hollow sinking, 7 times in the fixed plug drawing and 10 times in the floating drawing.

STUDY OF EPITAXIAL GROWTH OF DIAMOND FILM ON HETERO-MATERIAL SUBSTRATE

2005 ◽  
Vol 19 (22) ◽  
pp. 1087-1093
Author(s):  
YUAN LIAO ◽  
QINGXUAN YU ◽  
GUANZHONG WANG ◽  
RONGCHUAN FANG
Keyword(s):  
Epitaxial Growth ◽  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diamond Crystals ◽  
Initial Nucleation ◽  
Hot Filament

We study the epitaxial growth mechanism of diamond films using various hetero-materials as substrates in a hot-filament chemical vapor deposition (HFCVD) chamber. The same parameters were maintained in the nucleation and growth processes of diamond films on these substrates. The experimental results showed that the dominant orientation of diamond crystals has a relation with that of substrates identified by X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The preference of diamond films on non-diamond substrates is explained as heteroepitaxial growth. We think that the initial nucleation process is the key to the heteroepitaxial growth of diamond film.

Neutron irradiation and annealing of 10B doped chemical vapor deposited diamond films

1995 ◽  
Vol 10 (10) ◽  
pp. 2523-2530 ◽  
Author(s):  
S.A. Khasawinah ◽  
Galina Popovici ◽  
J. Farmer ◽  
T. Sung ◽  
M.A. Prelas ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Unirradiated Sample ◽  
High Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Hot Filament

10B doped diamond films grown by hot filament chemical vapor deposition were neutron irradiated at moderately high fluence levels. The as-irradiated and annealed samples, along with an unirradiated sample, were analyzed using Raman spectroscopy and x-ray diffraction. It was found that a non-diamond amorphous phase was formed on irradiation. This phase transformed back to diamond on annealing. No graphite formation was observed. A comparison with nanodiamond powder was made. A similarity between irradiated diamond films and nanocrystalline diamond powder is discussed.

X-Ray Characterization of Thin Diamond Films Deposited by Hot-Filament Chemical Vapor Deposition

1991 ◽  
pp. 543-555
Author(s):  
Richard F. Hamilton ◽  
Diwakar Garg ◽  
Keith A. Wood ◽  
David S. Hoover
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament

Growth and Characterization of Tungsten Oxide for Applications in Nanoelectronics

2006 ◽  
Vol 48 ◽  
pp. 113-118
Author(s):  
Karthikk Sridharan ◽  
Kenneth P. Roberts ◽  
Saibal Mitra
Keyword(s):  
Tungsten Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tungsten Filament ◽  
X Ray ◽  
Transmission Electron ◽  
Oxide Nanorods ◽  
Hot Filament

Tungsten oxide nanorods were prepared in a hot filament chemical vapor deposition (HFCVD) reactor. A mixture of gases containing hydrogen, oxygen or hydrogen and methane mixed with water vapor were passed into a quartz glass jar reactor and activated using a heated tungsten filament. The resulting deposits were characterized by transmission electron microscopy (TEM), x-ray diffraction (XRD), and Raman Spectroscopy. The deposit consisted of tungsten oxide nanorods (5 – 10 nm diameter and 50 – 75 nm long) and tungsten nanospheres with diameters of ~50nm. The tungsten oxide is then reduced to metallic tungsten by annealing in a hydrogen environment.

X-Ray Diffraction Analysis Of Strain And Mosaic Structure In (001) Oriented Homoepitaxial Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Brock Alexander ◽  
Pehr E. Pehrsson ◽  
David Black ◽  
James E. Butler
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Film Deposition ◽  
Mosaic Structure ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
High Pressure High Temperature

AbstractHomoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100] direction prior to film deposition. Some of the diamond films developed tensile stress sufficiently large to result in cracking on { 111 } cleavage planes, while other films exhibited compressive stress. The strain and mosaic structure were measured with seven crystal x-ray diffraction. This characterization tool allowed the separation of misorientation effects from those of lattice parameter variation. Films exhibited smaller (˜88 ppm) and larger (˜27 ppm) perpendicular lattice parameters relative to the HPHT substrates. A cross-sectional approach for probing strain in diamond films with micro-Raman analysis was used to show stress distributions (˜100–300 MPa) through the thickness of the film.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

ChemInform Abstract: A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction.

ChemInform ◽  
2010 ◽  
Vol 28 (32) ◽  
pp. no-no
Author(s):  
M. S. HAQUE ◽  
H. A. NASEEM ◽  
A. P. MALSHE ◽  
W. D. BROWN
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited
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