Thin Film Processing for High-Tc Superconductors of Bi-System

1989 ◽  
Vol 169 ◽  
Author(s):  
K. Wasa ◽  
H. Adachi ◽  
K. Hirochi ◽  
Y. Ichikawa ◽  
K. Setsune
Keyword(s):  
Thin Film ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Layer By Layer ◽  
High Tc Superconductors ◽  
High Tc ◽  
Superconducting Phases ◽  
High Tc Phase ◽  
Deposition Processes

AbstractBasic thin film deposition processes for the high-Tc superconductors of Bi-systems are described. There appear several superconducting phases including the low-Tc phase Bi2Sr2Ca1 Cu2Ox and the high-Tc phase Bi2Sr2Ca2Cu3Ox. Thin films with these superconducting phases are synthesized by a selection of the substrate temperature Ts during the deposition : the high-Tc phase with Tc=100K is synthesized at Ts>800 °C; the low-Tc phase with Tc=80K, at Ts<600°C. However, these films often comprise show structure comprizing the different superconducting phases.The close control of the superconducting phase has been achieved by the layer-by-layer deposition in the atomic layer epitaxy process.

A computational study of SrTiO3 thin film deposition: Morphology and growth modes

2009 ◽  
Vol 24 (6) ◽  
pp. 1994-2000 ◽  
Author(s):  
Jennifer L. Wohlwend ◽  
Cosima N. Boswell ◽  
Simon R. Phillpot ◽  
Susan B. Sinnott
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Computational Study ◽  
Thin Film Deposition ◽  
Layer Growth ◽  
Film Deposition ◽  
Layer By Layer ◽  
Growth Modes ◽  
Deposition Processes ◽  
Dynamics Simulations

The growth of SrTiO3 (STO) thin films is examined using classical molecular dynamics simulations. First, a beam of alternating SrO and TiO2 molecules is deposited on the (001) surface of STO with incident kinetic energies of 0.1, 0.5, or 1.0 eV/atom. Second, deposition of alternating SrO and TiO2 monolayers, where both have incident energies of 1.0 eV/atom, is examined. The resulting thin film morphologies predicted by the simulations are compared to available experimental data. The simulations indicate the way in which the incident energy, surface termination, and beam composition influence the morphology of the thin films. On the whole, some layer-by-layer growth is predicted to occur on both SrO- and TiO2-terminated STO for both types of deposition processes, with the alternating monolayer approach yielding thin films with compositions that are much closer to that of bulk STO.

scholarly journals Self-Aligned Thin-Film Patterning by Area-Selective Etching of Polymers

Coatings ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1124
Author(s):  
Chao Zhang ◽  
Markku Leskelä ◽  
Mikko Ritala
Keyword(s):  
Thin Film ◽  
Polymer Film ◽  
Semiconductor Devices ◽  
Atomic Layer ◽  
Thin Film Deposition ◽  
Selective Etching ◽  
Film Deposition ◽  
Deposition Processes ◽  
Lift Off ◽  
Thin Film Patterning

Patterning of thin films with lithography techniques for making semiconductor devices has been facing increasing difficulties with feature sizes shrinking to the sub-10 nm range, and alternatives have been actively sought from area-selective thin film deposition processes. Here, an entirely new method is introduced to self-aligned thin-film patterning: area-selective gas-phase etching of polymers. The etching reactions are selective to the materials underneath the polymers. Either O2 or H2 can be used as an etchant gas. After diffusing through the polymer film to the catalytic surfaces, the etchant gas molecules are dissociated into their respective atoms, which then readily react with the polymer, etching it away. On noncatalytic surfaces, the polymer film remains. For example, polyimide and poly(methyl methacrylate) (PMMA) were selectively oxidatively removed at 300 °C from Pt and Ru, while on SiO2 they stayed. CeO2 also showed a clear catalytic effect for the oxidative removal of PMMA. In H2, the most active surfaces catalysing the hydrogenolysis of PMMA were Cu and Ti. The area-selective etching of polyimide from Pt was followed by area-selective atomic layer deposition of iridium using the patterned polymer as a growth-inhibiting layer on SiO2, eventually resulting in dual side-by-side self-aligned formation of metal-on-metal and insulator (polymer)-on-insulator. This demonstrates that when innovatively combined with area-selective thin film deposition and, for example, lift-off patterning processes, self-aligned etching processes will open entirely new possibilities for the fabrication of the most advanced and challenging semiconductor devices.

Thin film processing for high-Tc superconductors of the Bi-system

1991 ◽  
Vol 6 (7) ◽  
pp. 1595-1604 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Hideaki Adachi ◽  
Kumiko Hirochi ◽  
Yo Ichikawa ◽  
Tomoaki Matsushima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxide Superconductors ◽  
Minimum Thickness ◽  
High Tc ◽  
Sputtering Deposition ◽  
Crystal Unit Cell ◽  
Deposition Processes ◽  
Controlled Deposition

Basic thin film deposition processes for controlled deposition of the high-Tc superconductors of the Bi-systems are described. The layered structures of Bi-oxide superconductors are fabricated by a multitarget sputtering process. The multitarget sputtering process realizes the controlled deposition of single phase Bi-oxide superconductors, Bi2O2 · 2SrO · (n −1)CaO · nCuO2 for n = 1 to 5. The minimum thickness controlled by the multitarget sputtering is a half crystal unit-cell of around 15 Å, and the superlattices comprising (AkBk) · m, where A and B denote the Bi-oxide superconductors with different numbers of Cu–O layers, could be fabricated for k > 1, although ion mixing takes place during the sputtering deposition due to the bombardment of the highly energetic sputtered adatoms. Multitarget sputtering will be available for the fabrication of the artificially-made layered oxide superconductors (ALOS).

Deposition of diamond-like carbon

1993 ◽  
Vol 342 (1664) ◽  
pp. 277-286 ◽  
Keyword(s):  
Thin Film ◽  
Amorphous Carbon ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Diamond Like Carbon ◽  
Hydrogenated Amorphous Carbon ◽  
Sizeable Fraction ◽  
Deposition Processes ◽  
Hydrogenated Amorphous

Diamond-like carbon refers to forms of amorphous carbon and hydrogenated amorphous carbon containing a sizeable fraction of sp 3 bonding, which makes them mechanically hard, infrared transparent and chemically inert. This paper discusses the various thin film deposition processes used to form diamond-like carbon and the deposition mechanisms responsible for promoting the metastable sp 3 bonding.

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