Characterization of Polysilicon Thin Films by Variable Angle Spectroscopic Ellipsometry

1990 ◽  
Vol 182 ◽  
Author(s):  
Yi-Ming Xiong ◽  
Paul G. Snyder ◽  
John A. Woollam ◽  
Eric R. Krosche ◽  
Yale Strausser
Keyword(s):  
Electron Microscopy ◽  
Spectroscopic Ellipsometry ◽  
Multilayer Structures ◽  
Cross Sectional ◽  
Variable Angle ◽  
Transmission Electron ◽  
Polysilicon Layer ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Thickness Measurements

AbstractVariable angle spectroscopic ellipsometry was used to characterize polysilicon multilayer structures. Five different multilayer wafers, each containing a polysilicon layer, were studied. Layer thicknesses and compositions were determined at several locations across each wafer. The thickness measurements obtained by ellipsometry are compared with those determined from cross-sectional transmission electron microscopy (XTEM).

Comparative Thickness Measurements of Heterojunction Layers by Ellipsometric, RBS, and XTEM Analysis

1986 ◽  
Vol 77 ◽  
Author(s):  
J. A. Woollam ◽  
P. G. Snyder ◽  
A. W. McCOrmick ◽  
A. K. Rai ◽  
D. C. Ingram ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering ◽  
Angle Of Incidence ◽  
Gaas Sample ◽  
Cross Sectional ◽  
Variable Angle ◽  
Transmission Electron ◽  
Thickness Measurements

ABSTRACTVariable Angle of incidence Spectroscopie Ellipsometry (VASE), Rutherford Backscattering (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM), are used to measure heterojunction layer thicknesses in an AlGaAs/GaAs sample. All three techniques yield the same thickness values within error limits.

Characterization of polycrystalline AlN films using variable-angle spectroscopic ellipsometry

2005 ◽  
Vol 23 (4) ◽  
pp. 1284-1289 ◽  
Author(s):  
Li-Peng Wang ◽  
Dong S. Shim ◽  
Qing Ma ◽  
Valluri R. Rao ◽  
Eyal Ginsburg ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Variable Angle ◽  
Variable Angle Spectroscopic Ellipsometry

Characterization of Interfacial Layer of DUV Coatings by Spectroscopic Ellipsometry

2013 ◽  
Vol 662 ◽  
pp. 277-283
Author(s):  
Wen Yuan Deng
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Interfacial Layer ◽  
Single Layer ◽  
Double Layers ◽  
Optical Index ◽  
Variable Angle ◽  
Layer Sample ◽  
Deep Ultraviolet ◽  
Variable Angle Spectroscopic Ellipsometry

The Interfacial layer has an important influence on the optical performance of the deep ultraviolet (DUV) coatings. The variable angle Spectroscopic ellipsometry measurements of three kinds of DUV coating samples were performed in the wavelength range 150-500nm using a purged variable angle Spectroscopic ellipsometer. The samples include the single layer sample, double layers sample, and three layers sample. The thickness and optical index of the MgF2 layer and LaF3 layer as well as those of the interfacial layer between them were obtained by successful regression of the SE measurements. For the single layer, the agreement of the results between the SE and the spectrophotometic techniques was very good. The obtained thickness of the two kinds of interfacial layer was in consistent with the RMS results of the single layer obtained by AFM, indicating the obtained results were reliable.

Characterization of the ZnSe/GaAs Interface Layer by Tem and Spectroscopic Ellipsometry

1992 ◽  
Vol 280 ◽  
Author(s):  
R. Dahmani ◽  
L. Salamanca-Riba ◽  
D. P. Beesabathina ◽  
N. V. Nguyen ◽  
D. Chandler-Horowitz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Spectroscopic Ellipsometry ◽  
Interface Layer ◽  
Transmission Electron ◽  
Three Phase ◽  
Znse Thin Films ◽  
Microscopy Images

ABSTRACTThe interface between ZnSe thin films and GaAs substrates is characterized by High Resolution Transmission Electron Microscopy and room temperature Spectroscopic Ellipsometry. The films were grown on (001) GaAs by Molecular Beam Epitaxy. A three-phase model is used in the reduction of the ellipsometric data, from which the presence of a transition layer of Ga2Se3, with a thickness of less than 1 nm, is confirmed. These results corroborate the high resolution transmission electron microscopy images obtained from the same samples.

Characterization of Electrodeposited Cobalt/Platinum(Ill) Ultrathin Films and Multilayers

1995 ◽  
Vol 382 ◽  
Author(s):  
Y. Jyoko ◽  
S. Kashiwabara ◽  
Y. Hayashi
Keyword(s):  
Electron Microscopy ◽  
Ultrathin Films ◽  
Photoelectron Spectroscopy ◽  
Multilayered Structure ◽  
Cross Sectional ◽  
Composition Modulation ◽  
Potential Control ◽  
Transmission Electron ◽  
Reflection Electron Microscopy

ABSTRACTReflection electron microscopy (REM) studies of Co electrodeposition on Pt(111) singlecrystal surfaces under potential control have revealed a heteroepitaxial and simultaneous multinuclear multilayer growth in a range from several up to some ten monolayer coverages at room temperature. This growth process has been dependent upon the crystallization overpotential during electrodeposition. REM observations have also suggested the formation of an ordered CoPt3 alloy at the interface between the Pt/Co ultrathin bilayers grown epitaxially on Pt(111) surfaces. Auger and photoelectron spectroscopy experiments on the Pt/Co/Pt(111) system have confirmed a limited interdiffusion or interfacial alloying below the Pt overlayer leading to an induced magnetic moment on the Pt atoms. The Pt/Co interface exhibits electronic interface states of mainly Pt-5d character. Cross-sectional transmission electron microscopy (TEM) observations have provided the first direct experimental evidence for composition modulation across successive layers in a Pt/Co nanometer-multilayered structure prepared by electrodeposition.

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