Atomic Structure of Ag/Ni Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
Y. Gao ◽  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Lattice Parameter ◽  
Special Technique ◽  
Misfit Dislocations ◽  
Lattice Statics ◽  
Embedded Atom ◽  
Resolution Electron ◽  
Small Lattice ◽  
Model Structures

AbstractWhile in heterophase systems of small lattice parameter differences, misfit dislocations are often formed at the interface, it is not known, whether and in which form, misfit localization occurs when the misfit is very large. The atomic structure of Ag/Ni interfaces (misfit 14%) was studied by high-resolution electron microscopy (HREM). A special technique was developed to prepare interface specimens suitable for HREM observations.Lattice statics calculations, using embedded-atom potentials, were performed to determine the structure and energies of Ag/Ni interfaces. The lowest interfacial energy was found for the cube-on-cube orientation and (111) interfaces. This is in agreement with the experimental observation, that all interfaces are strongly faceted with (111)Ag/(111)Ni facets.Misfit localization was found by HREM and computer simulation. The HREM observations will be compared to images derived from image simulations, based on model structures obtained from embedded atom calculations.

High-resolution imaging of the (111) Ag/Ni interface

1990 ◽  
Vol 48 (4) ◽  
pp. 368-369
Author(s):  
Y. Gao ◽  
K. L. Merkle
Keyword(s):  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Special Technique ◽  
Misfit Dislocations ◽  
Metal Composite ◽  
Coherent Interface ◽  
Embedded Atom ◽  
Resolution Electron ◽  
Metal Metal ◽  
Resolution Imaging

Computer simulations of Ag/Ni interfaces using embedded atom potentials have predicted that the interfacial energy of the (111) Ag/Ni interface is lowest. However, the semi-coherent interface configuration implied by these calculations has not been confirmed by experimental observation. It is well known that in heterophase systems with small misfit, the misfit is accommodated by misfit dislocations at the interface, forming a semi-coherent interface. However, it is not clear whether or not and to what degree misfit localization will occur at the interfaces with as large a misfit as 14% (Ag/Ni interface). The purpose of this investigation was to examine the atomic structure of the (111) Ag/Ni interface by high-resolution electron microscopy (HREM) and to compare the result to calculated images based on relaxed and rigid models.Metal-metal composite thin films of Ni particles in a Ag matrix were produced by epitaxial growth on (110) NaCl substrates using a special technique described in detail elsewhere. HREM observations were performed using H-9000 at a Northwestern University operated at 300 kV. The images were obtained near optimum defocus without objective aperture. All image simulations were carried out using the multislice method with EMS program package.

High-resolution electron microscopy of metal/metal and metal/metal-oxide interfaces in the Ag/Ni and Au/Ni systems

1990 ◽  
Vol 5 (9) ◽  
pp. 1995-2003 ◽  
Author(s):  
Y. Gao ◽  
Karl L. Merkle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Metal Oxide ◽  
High Resolution Electron Microscopy ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Lattice Statics ◽  
Embedded Atom ◽  
Resolution Electron ◽  
Metal Metal

The atomic structures of heterophase interfaces with large misfits (>14% in Ag/Ni and Au/Ni) and with small misfits (∼2% in Ag/NiO and Au/NiO) have been studied by high-resolution electron microscopy (HREM). It is found that all interfaces are strongly faceted on (111) planes. This indicates that (111) interfaces have the lowest interfacial energy in both metal/metal and metal/metal-oxide systems. For the metal interfaces, this also agrees with determinations of interfacial energies by lattice statics calculations. The large misfit of Ag/Ni and Au/Ni interfaces is accommodated by misfit dislocations. Observations of misfit localization by HREM are in good agreement with images derived from computer simulation, based on relaxed structures, obtained in embedded atom calculations. All misfit dislocations at the Ag/Ni and Au/Ni interfaces lie exactly in the plane of the interfaces, while the dislocations at Ag/NiO and Au/NiO interfaces reside at a stand-off distance, 3 to 4 (111)Ag or (111)Au interplanar spacings from the interfaces.

Epitaxial Growth and Structure of Cubic and Pseudocubic Perovskite Films on Perovskite Substrates

1995 ◽  
Vol 401 ◽  
Author(s):  
P. A. Langjahr ◽  
T. Wagner ◽  
M. RÜhle ◽  
F. F. Lange
Keyword(s):  
Electron Microscopy ◽  
Epitaxial Growth ◽  
Lattice Mismatch ◽  
High Resolution Electron Microscopy ◽  
Lattice Parameter ◽  
Ternary Oxide ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Resolution Electron

AbstractCubic and pseudocubic perovskite films on perovskite substrates are used to study the influence of the lattice mismatch on the epitaxial growth of thin films on substrates of the same structure. For the growth of the films, a metalorganic decomposition route (MOD) using 2-ethylhexanoates and neodecanoates as precursors, was developed. The decomposition of the precursors was investigated with thermogravimetric analysis (TGA) and x-ray diffraction (XRD). The films were spin-coated on (001)-oriented SrTiO3- and LaAlO3-substrates, pyrolyzed and afterwards annealed between 600°C and 1200°C. XRD-nvestigations and conventional transmission electron microscopy (CTEM) show, that epitaxial films with the orientation relationship [100](001) film ║ [100](001) substrate can be grown. With XRD, it could be shown, that not only ternary oxide films (SrZrO3, BaZrO3 and BaCeO3), but also perovskite solid solution films (SrTi0.5Zr0.5O3and BaCe0.5Zr0.5O3) can be prepared. Strong interdiffusion, detected by a shift of the film lattice parameter towards the substrate lattice parameter was found in SrZrO3- and BaZrO3-films on SrTiO3, annealed at temperatures above 1050°C. High resolution electron microscopy (HREM) studies of SrZrO3 on SrTiO3 show that a crystalline semicoherent interface with a periodical array of misfit dislocations is present.

Atomic Structure of Interfaces: Link of Atomistic Calculations with High Resolution Electron Microscopy

1998 ◽  
Vol 4 (S2) ◽  
pp. 762-763
Author(s):  
V. Vitek
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Computer Modeling ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Interfacial Structure ◽  
Embedded Atom ◽  
Resolution Electron ◽  
Atomic Interactions ◽  
Atomistic Calculations

Since interfaces and grain boundaries affect critically many properties of materials, their atomic structure has been investigated very extensively using computer modeling. Most of these calculations have been made using semi-empirical central-force descriptions of atomic interactions, recently primarily the embedded-atom type many-body potentials. Owing to the approximate nature of such schemes, a connection with experimental observations that can validate the calculations is essential. The high resolution electron microscopy (HREM) is such experimental technique and it has, indeed, been frequently combined with calculations of interfacial structure and chemistry. In fact such a link is not only important for verification of the results of computer modeling but also crucial for meaningful interpretation of HREM observations. Hence, coupling the atomistic modeling with HREM is a synergistic procedure. It not only leads to better understanding of interfacial structures but may contribute significantly to the validation and assessment of limits of the schemes used for the description of atomic interactions.

scholarly journals Comparisons Of Observed And Simulated Atomic Structures Of Pd/NiO Heterophase Interfaces

1992 ◽  
Vol 295 ◽  
Author(s):  
M. I. Buckett ◽  
J. P. Shaffer ◽  
Karl L. Merkle
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Rigid Body ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Boundary Plane ◽  
Misfit Dislocations ◽  
Atomic Structures ◽  
Resolution Electron ◽  
Image Simulations

AbstractHigh-resolution electron microscopy (HREM) and image simulations using the multislice algorithm have been used to study the atomic structure of a Pd/NiO (111) interface in an intemally oxidized sample. Samples prepared in this way result in cube-on-cube oriented or twin-related precipitates whose (111) interfaces exhibit a contrast modulation along the boundary plane in HREM images. Previous studies have reported that the observed structural period of this modulation corresponds qualitatively to the expected spacing if the boundary was composed of a network of misfit dislocations. In this study, rigid models of the (111) interface as viewed from the [110] direction were simulated using the EMS suite of programs. The questions we address are: (1) whether the terminating plane on the oxide side is made up of a Ni or an 0 layer, and (2) whether a rigid body translation normal to the interface exists. Finally, the results of the simulations are compared and contrasted to through-focal experimental images to investigate the origin of the contrast modulations and their possible relation to the extent of the misfit localization in these systems.

High-resolution electron microscopy of the atomic structure of some grain boundaries in Au

1986 ◽  
Vol 44 ◽  
pp. 414-415
Author(s):  
W. Krakow ◽  
D. A. Smith
Keyword(s):  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Image Features ◽  
Image Feature ◽  
Resolution Electron ◽  
Tilt Boundaries ◽  
Processing Techniques ◽  
Atom Position ◽  
Structure Configuration

The successful determination of the atomic structure of [110] tilt boundaries in Au stems from the investigation of microscope performance at intermediate accelerating voltages (200 and 400kV) as well as a detailed understanding of how grain boundary image features depend on dynamical diffraction processes variation with specimen and beam orientations. This success is also facilitated by improving image quality by digital image processing techniques to the point where a structure image is obtained and each atom position is represented by a resolved image feature. Figure 1 shows an example of a low angle (∼10°) Σ = 129/[110] tilt boundary in a ∼250Å Au film, taken under tilted beam brightfield imaging conditions, to illustrate the steps necessary to obtain the atomic structure configuration from the image. The original image of Fig. 1a shows the regular arrangement of strain-field images associated with the cores of ½ [10] primary dislocations which are separated by ∼15Å.

Atomic structure imaging of the Si/SiO2 interface with high-resolution electron microscopy

1986 ◽  
Vol 44 ◽  
pp. 390-391
Author(s):  
J.L. Batstone ◽  
J.M. Gibson ◽  
Alice.E. White ◽  
K.T. Short
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Atomic Structure ◽  
High Resolution Electron Microscopy ◽  
Medium Voltage ◽  
Voltage Electron ◽  
Resolution Electron ◽  
Structural Image ◽  
Electron Microscopes ◽  
Point To Point

High resolution electron microscopy (HREM) is a powerful tool for the determination of interface atomic structure. With the previous generation of HREM's of point-to-point resolution (rpp) >2.5Å, imaging of semiconductors in only <110> directions was possible. Useful imaging of other important zone axes became available with the advent of high voltage, high resolution microscopes with rpp <1.8Å, leading to a study of the NiSi2 interface. More recently, it was shown that images in <100>, <111> and <112> directions are easily obtainable from Si in the new medium voltage electron microscopes. We report here the examination of the important Si/Si02 interface with the use of a JEOL 4000EX HREM with rpp <1.8Å, in a <100> orientation. This represents a true structural image of this interface.

Quasiperiodic interfaces: HREM observations of grain and phase boundaries

1990 ◽  
Vol 48 (4) ◽  
pp. 332-333
Author(s):  
K. L. Merkle
Keyword(s):  
Atomic Structure ◽  
Direct Determination ◽  
Lattice Parameter ◽  
Atomic Scale ◽  
Misfit Dislocations ◽  
Oxide Systems ◽  
Atomic Structures ◽  
Periodic Arrays ◽  
Parameter Ratio ◽  
Metal Metal

The atomic structures of internal interfaces have recently received considerable attention, not only because of their importance in determining many materials properties, but also because the atomic structure of many interfaces has become accessible to direct atomic-scale observation by modem HREM instruments. In this communication, several interface structures are examined by HREM in terms of their structural periodicities along the interface.It is well known that heterophase boundaries are generally formed by two low-index planes. Often, as is the case in many fcc metal/metal and metal/metal-oxide systems, low energy boundaries form in the cube-on-cube orientation on (111). Since the lattice parameter ratio between the two materials generally is not a rational number, such boundaries are incommensurate. Therefore, even though periodic arrays of misfit dislocations have been observed by TEM techniques for numerous heterophase systems, such interfaces are quasiperiodic on an atomic scale. Interfaces with misfit dislocations are semicoherent, where atomically well-matched regions alternate with regions of misfit. When the misfit is large, misfit localization is often difficult to detect, and direct determination of the atomic structure of the interface from HREM alone, may not be possible.

Nano-probe x-ray analysis and high-resolution imaging on planar defects in high-pressure synthesized infinite-layer superconductor

1994 ◽  
Vol 52 ◽  
pp. 728-729
Author(s):  
Y. Y. Wang ◽  
H. Zhang ◽  
V. P. Dravid ◽  
H. Zhang ◽  
L. D. Marks ◽  
...  
Keyword(s):  
High Pressure ◽  
High Resolution ◽  
Atomic Structure ◽  
Emission Spectra ◽  
High Resolution Electron Microscopy ◽  
Planar Defects ◽  
X Ray ◽  
Infinite Layer ◽  
Resolution Electron ◽  
Resolution Imaging

Azuma et al. observed planar defects in a high pressure synthesized infinitelayer compound (i.e. ACuO2 (A=cation)), which exhibits superconductivity at ~110 K. It was proposed that the defects are cation deficient and that the superconductivity in this material is related to the planar defects. In this report, we present quantitative analysis of the planar defects utilizing nanometer probe xray microanalysis, high resolution electron microscopy, and image simulation to determine the chemical composition and atomic structure of the planar defects. We propose an atomic structure model for the planar defects.Infinite-layer samples with the nominal chemical formula, (Sr1-xCax)yCuO2 (x=0.3; y=0.9,1.0,1.1), were prepared using solid state synthesized low pressure forms of (Sr1-xCax)CuO2 with additions of CuO or (Sr1-xCax)2CuO3, followed by a high pressure treatment.Quantitative x-ray microanalysis, with a 1 nm probe, was performed using a cold field emission gun TEM (Hitachi HF-2000) equipped with an Oxford Pentafet thin-window x-ray detector. The probe was positioned on the planar defects, which has a 0.74 nm width, and x-ray emission spectra from the defects were compared with those obtained from vicinity regions.

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