Epitaxial Growth and Stability of C49 TiSi2 ON Si(111).

1990 ◽  
Vol 198 ◽  
Author(s):  
Hyeongtag Jeon ◽  
J. W. Honeycutt ◽  
C. A. Sukow ◽  
T. P. Humphreys ◽  
R. J. Nemanich ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Metastable Phase ◽  
Plan View ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
The Individual ◽  
Relationship Of

ABSTRACTEpitaxial TiSi2 films have been grown by molecular beam epitaxy (MBE) on atomically clean Si(111)-orientated substrates. The growth procedure involves the ambient temperature deposition of Ti films of 50Å thickness and annealing to 800°C. In situ low energy electron diffraction (LEED) and Auger electron spectroscopy (AES) techniques have been used to monitor the TiSi2 formation process. The epitaxial films have been identified as the C49 metastable phase by both Raman spectroscopy and electron diffraction. Plan view transmission electron microscopy shows three different connected island morphologies. The individual island structures are single crystal and are grown epitaxially with different crystallographic orientations. The orientational relationship of the largest islands is given by [3 1 1] C49 TiSi2//[112]Si and (130) C49 TiSi2//(l1 1)Si. High resolution transmission electron microscopy (HRTEM) cross-section shows a coherent interface extending over several hundred angstroms.

Transmission Electron Microscopy of Epitaxial silicides grown by ultra high vacuum deposition

1989 ◽  
Vol 47 ◽  
pp. 462-463
Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Ex Situ ◽  
Transmission Electron

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.

Direct UHV-TEM Observation of Palladium Clusters on a Silicon Surface

2004 ◽  
Vol 10 (1) ◽  
pp. 134-138 ◽  
Author(s):  
Masaki Takeguchi ◽  
Kazutaka Mitsuishi ◽  
Miyoko Tanaka ◽  
Kazuo Furuya
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Silicon Surface ◽  
Lattice Structure ◽  
Plan View ◽  
Palladium Clusters ◽  
Transmission Electron ◽  
Pd Clusters

About 1 monolayer of palladium was deposited onto a silicon (111) 7 × 7 surface at a temperature of about 550 K inside an ultrahigh vacuum transmission electron microscope, resulting in formation of Pd2Si nanoislands and a 1 × 1 surface layer. Pd clusters created from an excess of Pd atoms on the 1 × 1 surface layer were directly observed byin situplan view high-resolution transmission electron microscopy. When an objective aperture was introduced so that electron diffractions less than 0.20 nm were filtered out, the lattice structure of the 1 × 1 surface with 0.33 nm spacing and the Pd clusters with a trimer shape were visualized. It was found that image contrast of the 1 × 1 lattice on the specific height terraces disappeared, and thereby an atomic structure of the Pd clusters was clearly observed. The appearance and disappearance of the 1 × 1 lattice was explained by the effect of the kinematical diffraction. It was identified that a Pd cluster was composed of three Pd atoms without a centered Si atom, which is consistent with the model proposed previously. The feature of the Pd clusters stuck at the surface step was also described.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

Solid-State Reactions in Fe/Si Multilayer Nanofilms

2014 ◽  
Vol 215 ◽  
pp. 144-149 ◽  
Author(s):  
Sergey M. Zharkov ◽  
Roman R. Altunin ◽  
Evgeny T. Moiseenko ◽  
Galina M. Zeer ◽  
Sergey N. Varnakov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Electron Diffraction ◽  
Solid State Reaction ◽  
Room Temperature ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Reaction Processes

Solid-state reaction processes in Fe/Si multilayer nanofilms have been studied in situ by the methods of transmission electron microscopy and electron diffraction in the process of heating from room temperature up to 900ºС at a heating rate of 8-10ºС/min. The solid-state reaction between the nanolayers of iron and silicon has been established to begin at 350-450ºС increasing with the thickness of the iron layer.

Techniques for Studying Nanoparticle Sintering by Plan-View In Situ Transmission Electron Microscopy

1998 ◽  
Vol 4 (3) ◽  
pp. 248-253 ◽  
Author(s):  
M. Yeadon ◽  
J.C. Yang ◽  
R.S. Averback ◽  
J.M. Gibson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal Substrate ◽  
Plan View ◽  
Supported Nanoparticles ◽  
Transmission Electron ◽  
Theoretical Predictions ◽  
Crystal Substrate

We discuss various techniques for the characterization of supported nanoparticles by in situ plan-view transmission electron microscopy. In particular, we discuss here mechanisms of image contrast formation by particles undergoing reorientation on the surface of a single crystal substrate. We consider reorientation by a variety of mechanisms including rotation, sintering and grain growth, and surface diffusion. Experimental observations are presented and the data compared with theoretical predictions.

HRTEM Study of Precipitates in Al-Mg-Si and Al-Mg-Ge Alloys

2006 ◽  
Vol 519-521 ◽  
pp. 221-226 ◽  
Author(s):  
Kenji Matsuda ◽  
Susumu Ikeno ◽  
Teruyoshi Munekata
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Diffraction Pattern ◽  
Metastable Phase ◽  
X Ray ◽  
Transmission Electron ◽  
Electron Diffraction Technique

In this work, the crystal structure of the rod-shaped precipitate in aged Al -1.0 mass% Mg2Ge alloy at 523 K has been investigated by high resolution transmission electron microscopy (HRTEM), electron diffraction technique and energy dispersive X-ray spectroscopy (EDS). The rod-shaped precipitate in its alloy has showed the similar arrangement of bright dots in its HRTEM images and selected area diffraction pattern (SADP) to those of the b’-phase in Al-Mg2Si alloy. But a lattice constant of this precipitate in Al-Mg2Ge alloy was slightly larger than the b’-phase in Al-Mg2Si alloy. In addition, the new metastable phase has been found out in Al-Mg-Ge alloy.

In-Situ Transmission Electron Microscopy Studies of the Oxidation of Si (111) 7X7

1989 ◽  
Vol 159 ◽  
Author(s):  
J.M. Gibson
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Electron Diffraction ◽  
High Energy ◽  
Energy Transmission ◽  
Transmission Electron Diffraction ◽  
Transmission Electron

ABSTRACTThe kinematical approximation is valid for High-Energy Transmission Electron Diffraction from monolayers in planview. We use this fact to study quantitatively the attack of Si (111) 7×7 by 02. Oxygen is found to bind in the bridging position of the adatom backbonds and render the structure very stable during subsequent 02 exposure. Electron-beam exposure during dosing additionally creates rapid disordering which is presumed to represent SiOx formation.

The defects and intergrowth of lead oxides revealed by HRTEM

1992 ◽  
Vol 25 (2) ◽  
pp. 199-204 ◽  
Author(s):  
Y. G. Wang ◽  
H. Q. Ye ◽  
K. H. Kuo ◽  
J. G. Guo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Structural Models ◽  
Planar Defects ◽  
Transmission Electron ◽  
Lead Oxides ◽  
Diffraction Patterns ◽  
Relationship Of

High-resolution transmission electron microscopy (HRTEM) and electron diffraction were used to investigate the microstructure of natural lead oxides found in Panzhihua Mountain, China. The electron diffraction patterns showed crossing of diffraction spots along 〈110〉 directions in litharge and along 〈100〉 directions in massicot and the structural images showed the domain-like texture, probably constructed by arrays of planar defects in the fundamental structures. Based upon the structure of these oxides the possible structural models of planar defects are discussed and the orientation relationship of litharge and massicot is determined.

In situ observations of electromigration induced void behavior

1995 ◽  
Vol 53 ◽  
pp. 244-245
Author(s):  
T. Marieb ◽  
J. C. Bravman ◽  
P. Flinn ◽  
D. Gardner ◽  
M. Madden
Keyword(s):  
Electron Microscopy ◽  
Void Nucleation ◽  
Plan View ◽  
Transmission Electron ◽  
Nucleation Sites ◽  
Microelectronics Industry ◽  
In Situ Observations ◽  
Backscatter Electron Detector ◽  
Voltage Scanning

Electromigration and stress voiding have been active areas of research in the microelectronics industry for many years. While accelerated testing of these phenomena has been performed for the last 25 years[1-2], only recently has the introduction of high voltage scanning electron microscopy (HVSEM) made possible in situ testing of realistic, passivated, full thickness samples at high resolution.With a combination of in situ HVSEM and post-testing transmission electron microscopy (TEM) , electromigration void nucleation sites in both normal polycrystalline and near-bamboo pure Al were investigated. The effect of the microstructure of the lines on the void motion was also studied.The HVSEM used was a slightly modified JEOL 1200 EX II scanning TEM with a backscatter electron detector placed above the sample[3]. To observe electromigration in situ the sample was heated and the line had current supplied to it to accelerate the voiding process. After testing lines were prepared for TEM by employing the plan-view wedge technique [6].

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