Scaling Properties in the Electrical and Reliability Characteristics of Lead-Zirconate-Titanate (PZT) Ferroelectric Thin Film Capacitors

1990 ◽  
Vol 200 ◽  
Author(s):  
C. Sudhama ◽  
J. C. Carrano ◽  
L. H. Parker ◽  
V. Chikarmane ◽  
J. C. Lee ◽  
...  

ABSTRACTThis paper investigates the issues in the scaling of thin film PZT (Lead-Zirconate-Titanate) capacitors for DRAM (Dynamic Random Access Memories) applications. The test structures used were MIM (metal-insulator-metal) capacitors with platinum electrodes and PZT deposited using a sol-gel process. Charge storage density (Q'c), leakage current density (JL), unipolar switching time to 10% decay (ts), time dependent dielectric breakdown (TDDB) and electrical fatigue have been analyzed. Unipolar switching time has been modeled as an RC time constant, where C is electric-field dependent. Q'c at a given electric field appears to remain constant over the range of film thicknesses and electrode areas studied. Leakage current density and time-to-breakdown (tBD) for a given electric field degrade with decreasing film thickness. Unipolar stressing causes considerably less fatigue than bipolar stressing, and after 2 × 1011 cycles, a 400nm film still exhibits sufficient Q'c for DRAM operation.

1993 ◽  
Vol 310 ◽  
Author(s):  
In K. Yoo ◽  
Seshu B. Desu ◽  
Jimmy Xing

AbstractMany attempts have been made to reduce degradation properties of Lead Zirconate Titanate (PZT) thin film capacitors. Although each degradation property has been studied extensively for the sake of material improvement, it is desired that they be understood in a unified manner in order to reduce degradation properties simultaneously. This can be achieved if a common source(s) of degradations is identified and controlled. In the past it was noticed that oxygen vacancies play a key role in fatigue, leakage current, and electrical degradation/breakdown of PZT films. It is now known that space charges (oxygen vacancies, mainly) affect ageing, too. Therefore, a quantitative ageing mechanism is proposed based on oxygen vacancy migration under internal field generated by either remanent polarization or spontaneous polarization. Fatigue, leakage current, electrical degradation, and polarization reversal mechanisms are correlated with the ageing mechanism in order to establish guidelines for simultaneous degradation control of PZT thin film capacitors. In addition, the current pitfalls in the ferroelectric test circuit is discussed, which may cause false retention, imprint, and ageing.


2009 ◽  
Vol 105 (6) ◽  
pp. 061605 ◽  
Author(s):  
Mohamed-Tahar Chentir ◽  
Emilien Bouyssou ◽  
Laurent Ventura ◽  
Christine Anceau

2006 ◽  
Vol 45 (11) ◽  
pp. 8795-8800 ◽  
Author(s):  
Jian Lu ◽  
Tsuyoshi Ikehara ◽  
Yi Zhang ◽  
Ryutaro Maeda ◽  
Takashi Mihara

2012 ◽  
Vol 112 (3) ◽  
pp. 034103 ◽  
Author(s):  
Julia Glaum ◽  
Yuri A. Genenko ◽  
Hans Kungl ◽  
Ljubomira Ana Schmitt ◽  
Torsten Granzow

1994 ◽  
Vol 75 (3) ◽  
pp. 1699-1704 ◽  
Author(s):  
K. G. Brooks ◽  
J. Chen ◽  
K. R. Udayakumar ◽  
L. E. Cross

Sign in / Sign up

Export Citation Format

Share Document