Increased Volatility of Barium Metal Organics by the Use of Nitrogen Lewis Bases

1990 ◽  
Vol 204 ◽  
Author(s):  
Jillian M. Buriak ◽  
Linda K. Cheatham ◽  
John J. Graham ◽  
Roy G. Gordon ◽  
Andrew R. Barron
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
No Decomposition ◽  
Carboxylate Complexes ◽  
Carrier Gas ◽  
Lewis Bases ◽  
Reduced Pressures

ABSTRACTSubstituted β-diketonate complexes of barium have limited volatility even at reduced pressures. The addition of nitrogen Lewis bases to the CVD carrier gas allows barium β-diketonates, even those with no reported volatility, to be transported in the vapor phase at temperatures as low as 70°C (atmospheric pressure) with no decomposition. No increase in volatility is observed, however, for barium carboxylate complexes.

A low cost and single source atmospheric pressure vapor phase epitaxy of ZnS for thin film photovoltaic applications

2018 ◽  
Vol 221 ◽  
pp. 216-219 ◽  
Author(s):  
Y. Yusoff ◽  
P. Chelvanathan ◽  
N. Kamaruddin ◽  
Md. Akhtaruzzaman ◽  
N. Amin
Keyword(s):  
Thin Film ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Low Cost ◽  
Vapor Phase Epitaxy ◽  
Single Source ◽  
Photovoltaic Applications

Downstream Plasma Activated Etching of IIIV Compound Semiconductorsa

1988 ◽  
Vol 144 ◽  
Author(s):  
R. Iyer ◽  
D.L. Lile
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Mass Spectrometer ◽  
Vapor Phase ◽  
Compound Semiconductors ◽  
Power Input ◽  
Reaction Process ◽  
Rf Power ◽  
Carrier Gas ◽  
Etch Rates

ABSTRACTWe have demonstrated a novel downstream plasma activated vapor phase etching of III-V compound semiconductors using ethylene di bromide as the etchant. Highly reproducible surfaces and etch rates were obtained by monitoring the reaction process with a mass spectrometer. Etch rates on InP of up to 4500Å/min, at temperatures as low as 160°C, at an rf power input of 25 watts were achieved with no evident damage to the surface as indicated by PL measurements. Apparent activation energy measurements seem to suggest that the etch products might be organometallic in nature, in contrast to inorganic etch products seen in most etching studies. Etching is partially anisotropic and resulted in smoother surfaces when H2 was used as the carrier gas for the etchant instead of N2.

Dense carrier gas effect in vapor phase nucleation

1997 ◽  
Vol 55 (5) ◽  
pp. 5743-5749 ◽  
Author(s):  
Vladimir M. Novikov ◽  
Oleg V. Vasil'ev ◽  
Howard Reiss
Keyword(s):  
Vapor Phase ◽  
Carrier Gas ◽  
Phase Nucleation ◽  
Gas Effect

Characterization of Matrix-Assisted Laser Desorption Based on Absorption and Acoustic Monitoring

1995 ◽  
Vol 49 (12) ◽  
pp. 1826-1833 ◽  
Author(s):  
Jan Preisler ◽  
Edward S. Yeung
Keyword(s):  
Atmospheric Pressure ◽  
Accurate Determination ◽  
Optimal Conditions ◽  
Plume Velocity ◽  
Ion Laser ◽  
Optical Probing ◽  
Argon Ion ◽  
Reduced Pressures

Conventional methods for studying matrix-assisted desorption-ionization rely on mass spectroscopy. In this study, a 488-nm argon-ion laser beam is deflected by two acoustooptic deflectors to image plumes desorbed at atmospheric pressure via absorption. All species, including neutral molecules, are monitored. Interesting features, e.g., differences between the initial plume and subsequent plumes desorbed from the same spot, or the formation of two plumes from one laser shot, are observed. Total plume absorbance can be correlated with the acoustic signal generated by the desorption event. A model equation for the plume velocity as a function of time is proposed. Optical probing also enables accurate determination of plume velocities at reduced pressures. These results define the optimal conditions for desorbing analytes from matrices, as opposed to achieving a compromise between efficient desorption and efficient ionization as is practiced in mass spectrometry.

Photoluminescence of Cl-doped ZnTe epitaxial layer grown by atmospheric pressure metalorganic vapor phase epitaxy

2003 ◽  
Vol 94 (3) ◽  
pp. 1527-1530 ◽  
Author(s):  
Tooru Tanaka ◽  
Kazuki Hayashida ◽  
Mitsuhiro Nishio ◽  
Qixin Guo ◽  
Hiroshi Ogawa
Keyword(s):  
Epitaxial Layer ◽  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Vapor Phase Growth of Functional Pentacene Films at Atmospheric Pressure

2012 ◽  
Vol 22 (23) ◽  
pp. 5050-5059 ◽  
Author(s):  
Cédric Rolin ◽  
Karolien Vasseur ◽  
Björn Niesen ◽  
Myriam Willegems ◽  
Robert Müller ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Atmospheric Pressure ◽  
Phase Growth ◽  
Vapor Phase Growth
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