Cluster Beam Deposition of High Temperature Material

1990 ◽  
Vol 206 ◽  
Author(s):  
William J. Herron ◽  
James F. Garvey
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Molecular Beam ◽  
Industrial Applications ◽  
Carbon Films ◽  
Cluster Beam ◽  
Beam Source ◽  
Pulse Delay ◽  
High Temperature Material ◽  
Cluster Beam Deposition

ABSTRACTWe present our latest attempts to utilize a Smalley-type cluster beam source, to generate novel thin films. This technique employs entraining, within a high pressure molecular beam expansion, the products generated from laser ablation of a rotating target rod. We will show how such a cluster beam source can be used to generate a high temperature material within a molecular beam and deposit it intact on a relatively cool substrate. By tailoring the various expansion conditions (ie., expansion pressure, laser fluence, type of carrier gas, pulse delay, etc...) one can drastically effect the morphology and chemical nature of the surface generated. This technique has the promise that it may be able to fabricate a wide variety of thin films with obvious industrial applications (superconducting thin films, diamond-like carbon films, patterned or multi-layered thin films, etc...)

CORRELATION BETWEEN FREE-CLUSTER PROPERTIES AND THIN FILMS ELABORATED BY LOW-ENERGY CLUSTER-BEAM DEPOSITION

1996 ◽  
Vol 03 (01) ◽  
pp. 1007-1011
Author(s):  
P. MÉLINON ◽  
V. PAILLARD ◽  
V. DUPUIS ◽  
J.P. PEREZ ◽  
J. TUAILLON ◽  
...  
Keyword(s):  
Thin Films ◽  
Carbon Cluster ◽  
Carbon Films ◽  
Low Energy ◽  
Cluster Beam ◽  
Free Cluster ◽  
Cluster Properties ◽  
Cluster Beam Deposition ◽  
Energy Cluster ◽  
Beam Deposition

The properties of thin films obtained by low-energy cluster-beam deposition are reviewed. The main characteristics are the nanoscale granular structure and the memory effect of the free-cluster properties. The first point is evidenced by the specific magnetic properties of transition-metal films, which are intermediate between amorphous and bulk phases, while the second point is illustrated from carbon films exhibiting the electronic structure of the free carbon cluster.

Formation and Structure of Thin Mo Layers and Mo-Ni Multilayers on Ni(001) by Molecular Beam Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
Y.H. Lee ◽  
R.P. Burns ◽  
J.B. Posthill ◽  
K.J. Bachmann
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Nucleation And Growth ◽  
Multilayer Heterostructures ◽  
Annealing Experiments ◽  
Small Period

AbstractThe growth of Mo overtayers and Mo-Ni multilayers on single crystal Ni(001) substrates is described. The nucleation and growth processes of these thin films were analyzed by LEED, XPS, AES and SEM and High Resolution AES investigations without breaking vacuum. Growth of Mo-Ni multilayer heterostructures on Ni(001) with ≈20Å periodicity is possible at low temperature (≈200 °C). At high temperature (≈550 °C) the growth proceeds by the Volmer-Weber mechanism preventing the deposition of small period multilayers. Annealing experiments on ultra-thin (<20Å) Mo overiayers deposited at 200 °C show an onset of interdiffusion at ≈ 550°C coupled to the generation of a new surface periodicity.

Piezoelectric Coefficients of Aluminum Nitride and Gallium Nitride

1999 ◽  
Vol 572 ◽  
Author(s):  
C. M. Lueng ◽  
H. L. W. Chan ◽  
W. K. Fong ◽  
C. Surya ◽  
C. L. Choy
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Aluminum Nitride ◽  
Composite Film ◽  
High Frequency ◽  
Molecular Beam ◽  
Silicon Substrates ◽  
Heterodyne Interferometer

ABSTRACTAluminum nitride (AlN) and gallium nitride (GaN) thin films have potential uses in high temperature, high frequency (e.g. microwave) acoustic devices. In this work, the piezoelectric coefficients of wurtzite AlN and GaN/AlN composite film grown on silicon substrates by molecular beam epitaxy were measured by a Mach-Zehnder type heterodyne interferometer. The effects of the substrate on the measured coefficients are discussed.

Ionized‐cluster‐beam deposition and electrical bistability of C60–tetracyanoquinodimethane thin films

1996 ◽  
Vol 68 (16) ◽  
pp. 2192-2194 ◽  
Author(s):  
H. J. Gao ◽  
Z. Q. Xue ◽  
K. Z. Wang ◽  
Q. D. Wu ◽  
S. Pang
Keyword(s):  
Thin Films ◽  
Cluster Beam ◽  
Electrical Bistability ◽  
Cluster Beam Deposition ◽  
Beam Deposition

Supersonic Cluster Beam Synthesis of Nanophase Materials

1999 ◽  
Vol 581 ◽  
Author(s):  
P. Milanil ◽  
S. Iannotta ◽  
F. Biasioli ◽  
P. Piseri ◽  
E. Barborini
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Tini Alloy ◽  
Cluster Beam ◽  
Crystallite Sizes ◽  
Nanophase Materials ◽  
Cluster Beams ◽  
Cluster Beam Deposition ◽  
Beam Deposition

ABSTRACTWe present the characterization of supersonic cluster beam deposition as a viable technique for the synthesis of nanostructured materials. Stable and intense cluster beams can be obtained with a pulsed microplasma cluster source. This technique has been applied to produce TiNi nanostructured thin films on various substrates at room temperature. The morphology and the structure of the film are strongly influenced by the precursor clusters. Films characterized by crystallite sizes of a few tens of nanometers can be grown without recrystallization by thermal annealing. The stoichiometry of the original TiNi alloy is maintained.

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