Silicide Formation in High-Dose Fe-Implanted Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
Z. Tan ◽  
F. Namavar ◽  
S. M. Heald ◽  
J. I. Budnick ◽  
F. H. Sanchez
Keyword(s):  
Fine Structure ◽  
Single Phase ◽  
Rutherford Backscattering Spectrometry ◽  
High Dose ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Implantation Damage ◽  
X Ray Absorption ◽  
Post Implantation

ABSTRACTWe have studied the silicide formation in Fe-implanted Si(100), with 1×1017-1×1018 Fe/cm2, using extended x-ray-absorption fine structure (EXAFS), x-ray diffraction and Rutherford backscattering spectrometry (RBS) methods. In the samples as-implanted at 350 °C, no silicide was observed at doses below 3×1017 Fe/cm2. At 5×1017 Fe/cm2, both α-FeSi2 and (β-FeSi2 form but α-FeSi2 appears to be the majority phase. As the dose increases to 7×1017 and above, ordered FeSi forms, but implantation damage is severe and a large number of Fe atoms are in very disordered environments. In addition to FeSi, Fe5Si3 was also observed in the 1×1018 Fe/cm2 sample. Upon post-implantation annealing at 700 °C or 900 °C, single phase P-FeSi2 was obtained independent of the dosage.

Exafs Studies of Cobalt Silicide Formation Produced by High Dose Ion Implantation

1988 ◽  
Vol 143 ◽  
Author(s):  
Z. Tan ◽  
J. I. Budnick ◽  
F. Sanchez ◽  
G. Tourillon ◽  
F. Namavar ◽  
...  
Keyword(s):  
Fine Structure ◽  
Ion Implantation ◽  
Single Phase ◽  
High Dose ◽  
Cobalt Silicide ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ordered Phases ◽  
X Ray Absorption

AbstractThe early stages of cobalt silicide formation in high dose (1.0 to 8.0× 1017Co/cm2) cobalt implanted Si(100) are studied by extended X-ray absorption fine structure (EXAFS), X-ray diffraction (XRD) and Rutherford backscattering spectroscopy (RBS). Locally ordered silicide that is not detectable in XRD has been observed with EXAFS in the as-implanted samples. Long-range ordered phases are observed in the 3 × 1017Co/cm2 samples. After thermal annealing at 700–750°C, single phase CoSi2 with (400) orientation is formed in all implants.

Silicide Formation By High Dose Transition Metal Implants Into Si.

1985 ◽  
Vol 51 ◽  
Author(s):  
F. H. Sanchez ◽  
F. Namavar ◽  
J. I. Budnick ◽  
A. Fasihudin ◽  
H. C. Hayden
Keyword(s):  
Transition Metal ◽  
Rutherford Backscattering Spectrometry ◽  
Atomic Diffusion ◽  
High Dose ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Implants ◽  
Metal Silicides ◽  
Suitable Technique

ABSTRACTWe report preliminary results of a study on silicide formation by means of high dose transition metal implants into Si (100) single crystals.100 keV Cr+, Fe+, Co+ and Ni+ were implanted at room temperature. For the Cr+, Fe+ and Ni+ implants, no silicide formation was observed after implantation. However, both Rutherford Backscattering Spectrometry (RBS) and X-Ray Diffraction (XRD) results clearly indicated the existence of CrSi2 after the Cr-Si samples were annealed 4 hours at 550°C. In the case of the Fe+ and Ni+ implants, FeSi2 and NiSi2 were identified by XRD after annealing the implanted samples half an hour at 400°C. A layer of CoSi of about 1000 Å was observed in the as implanted Co-Si samples by both RBS and XRD.Ni+ ions accelerated to 150 keV were implanted at 350°C. A much broader distribution and higher retention of Ni was obtained in this case, showing evidence of long range atomic diffusion. NiSi and polycrystalline silicon were observed by XRD in the as implanted samples.The possibility of high dose ion implantation as a suitable technique for producing transition metal silicides is discussed.

scholarly journals Titanium Silicide Formation in Presence of Oxygen

1992 ◽  
Vol 15 (1) ◽  
pp. 9-26 ◽  
Author(s):  
C. Nobili ◽  
F. Nava ◽  
G. Ottaviani ◽  
M. Costato ◽  
G. De Santi ◽  
...  
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Titanium Silicide ◽  
Silicide Formation ◽  
Metal Oxidation ◽  
X Ray Diffraction ◽  
Amorphous Films ◽  
Titanium Disilicide ◽  
X Ray

In-situ resistivity vs. temperature, Rutherford backscattering spectrometry, Auger electron spectroscopy and X-ray diffraction measurements have been performed in order to study the effects arising from the presence of oxygen in the annealing ambient on the integrity of amorphous films of TiSix, with x ranging from 1.45 to 2.1. Crystalisation occurs around 400 C. The presence of oxygen produces the formation of silicon and titanium oxide around 500 C. Critical analysis of the experimental results have indicated that metal oxidation is inhibited when an excess of silicon is present, which suggests the use of a sputtered Si coating cap as a medium capable of effectively decoupling the silicide film from oxygen. This avoids unwanted Ti oxidation even in heavily oxygen contaminated ambients up to the highest temperatures used for the formation of low resistivity titanium disilicide.

Differentiation of biological hydroxyapatite compounds by infrared spectroscopy, x-ray diffraction and extended x-ray absorption fine structure

2001 ◽  
Vol 90 (12) ◽  
pp. 6440-6446 ◽  
Author(s):  
E. Chassot ◽  
H. Oudadesse ◽  
J. Irigaray ◽  
E. Curis ◽  
S. Bénazeth ◽  
...  
Keyword(s):  
Fine Structure ◽  
Infrared Spectroscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption
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