The Effect of Rapid Thermal Annealing on the Electrical and Material Characteristics of Planar Doped and Uniformly Doped GaAs/AiGaAs/InGaAs Pseudomorphic HEMT Structures

1991 ◽  
Vol 240 ◽  
Author(s):  
T. E. Kazior ◽  
S. K. Brierley
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Material Properties ◽  
Structural Changes ◽  
Electrical Characteristics ◽  
Pl Spectra ◽  
Annealing Temperatures ◽  
Si Doping ◽  
Significant Change ◽  
Ingaas Quantum Well

ABSTRACTMBE grown GaAs/Al0.25Ga0.75As/In0.85Ga0.85 As structures were subjected to SiNx capped rapid thermal annealing and their electrical and material properties were characterized by Hall measurements and photoluminescence (PL). Low temperature (5°K) PL spectra from undoped structures annealed up to 900°C indicated negligible intermixing at the AIGaAs/lnGaAs interface. For planar doped structures (Nd≈5×1012/cm2) the Hall mobility began to decrease at anneal temperatures as low as 800°C with significant degradation observed for annealing temperatures at 850°C. This data is supported by PL spectra which indicate no significant change for samples annealed at 800°C. For the samples annealed at ≥ 850°C a large increase in the full width at half maximum of the transitions from the electron sub-bands of the InGaAs quantum well were observed, suggesting that the change in electrical characteristics is primarily due to diffusion of the Si doping pulse. In contrast. Hall measurement of uniformly doped structures reveal only small decreases in mobility and no significant change in sheet concentration for anneal temperatures up to 900°C and doping levels up to 2.5×1018/cm3. PL spectra reveal no structural changes.

Electrical Characteristics of Silicon p+n Diodes Fabricated BY B+ Implantation and Rapid Thermal Annealing in the Temperature Range 700 - 1000°C

1986 ◽  
Vol 71 ◽  
Author(s):  
Akira Usami ◽  
Masayuki Katayama ◽  
Yutaka Tokuda ◽  
Takao Wada
Keyword(s):  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Series Resistance ◽  
Energy Levels ◽  
Electrical Characteristics ◽  
Temperature Range ◽  
Annealing Temperatures ◽  
Residual Defect

AbstractB+ implanted p+n diodes were fabricated by rapid thermal annealing (RTA) in the temperature range 700 - 1100°C. Values of series resistance of diodes decreased with the annealing temperatures. Leakage current (Ir) was independent of the RTA temperatures. Residual defect concentrations increased in the range 700 - 900°C and decreased in the range 1000 - 1100°C. Concentrations of defects with the energy levels of Ec- 0.33 and Ec - 0.48 eV were ∼ 1012 cm−3 for diodes fabricated at 1100°C. The growth of defects in the range 700 - 900°C was ascribed to the diffusion of defects from the implanted layer during annealing.

Rapid Thermal Anneaung of Arsenic-Phosphorus(N+-N-) Double-Diffused Shallow Junctions

1985 ◽  
Vol 52 ◽  
Author(s):  
D. L. Kwong ◽  
N. S. Alvi ◽  
Y. H. Ku ◽  
A. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Experimental Results ◽  
Silicon Substrates ◽  
Electrical Characteristics ◽  
Shallow Junctions

ABSTRACTDouble-diffused shallow junctions have been formed by ion implantation of both phosphorus and arsenic ions into silicon substrates and rapid thermal annealing. Experimental results on defect removal, impurity activation and redistribution, effects of Si preamorphization, and electrical characteristics of Ti-silicided junctions are presented.

Influence of Low-Dose Ion-Beam Mixing on CoSi2 Formation

1992 ◽  
Vol 268 ◽  
Author(s):  
Ikasko C. Dehm ◽  
H. Ryssel
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Annealing Temperatures ◽  
Critical Dose ◽  
Incomplete Reaction ◽  
Abrupt Interface ◽  
Complete Formation

ABSTRACTIn this study, the critical dose for ion-beam mixing of Co and Si with Ge-ions which results in homogenous CoSi2 formation after rapid thermal annealing was found. For this purpose, Co was deposited by sputtering on chemically cleaned, <100>-oriented Si and subsequently mixed with Ge ions at doses in the range of 2. 1014 to 1. 1015 cm−2. Silicidation was performed in a rapid thermal annealing (RTA) system at temperatures between 700° and 100°C. Rutherford backscattering measurements showed that annealing at 700°C results in an incomplete reaction when ion-beam mixing at a dose of 2.1014 cm−2 or no ion-beam mixing was performed. After annealing at 1000°C, TEM samples revealed an inhomogeneous CoSi2 film consisting of large grains embedded in the Si. Mixing at doses at or above 5.1014 cm−2 and subsequent RTA at 700°C resulted in uniform CoSi2 layers. Higher annealing temperatures cause larger grains and resistivity values as low as 18 μΩcm. Therefore, we demonstrated that the critical dose leading to complete formation of smooth CoSi2 films with abrupt interface is 5.1014 cm−2 which is nearly the same value as the amorphization dose of Ge in Si.

Device and material properties of pseudomorphic HEMT structures subjected to rapid thermal annealing

1992 ◽  
Vol 39 (1) ◽  
pp. 50-55 ◽  
Author(s):  
L.P. Sadwick ◽  
D.C. Streit ◽  
W.L. Jones ◽  
C.W. Kim ◽  
R.J. Hwu
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Material Properties

Rapid Thermal Annealing and Ion Implantation of Heteroepitaxial ZnSe/GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
B.J. Skromme ◽  
N.G. Stoffel ◽  
A.S. Gozdz ◽  
M.C. Tamargo ◽  
S.M. Shibli
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
Vacancy Formation ◽  
Annealing Temperatures ◽  
The Creation ◽  
Zn Vacancy

ABSTRACTWe describe the effects of rapid thermal annealing on the photoluminescence (PL) and electrical properties of heteroepitaxial ZnSe grown by molecular beam epitaxy on GaAs, using either no cap or plasma-deposited SiO2, Si3N4, or diamond-like C caps, and annealing temperatures from 500 to 800°C. Capless anneals (in contact with GaAs) produce badly degraded PL properties, while capped anneals can prevent this degradation. We show that Si3N4 is significantly more effective in preventing Zn out-diffusion through t e cap than previously employed SiO2 films, as evidenced by less pronounced PL features related to the creation of Zn vacancies during the anneal. Implant damage tends to enhance the Zn vacancy formation. Rapid thermal annealing with Si3N4 caps is shown to optically activate shallow N acceptor implants.

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