Physicochemical Properties of Rf Magnetron Sputtered Lead Zirconate Titanate Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
E. Catitan ◽  
B. Agius ◽  
H. Achard ◽  
J.P. Joly ◽  
J.C. Cheang Wong ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Deuteron Beam ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Zirconate Titanate ◽  
Kinetics Of

AbstractLead zirconate titanate thin films have been grown by rf magnetron sputtering an oxide target of nominal composition [Pb(Zr0.55,Ti0.45)O3 or PZT] in argon. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative and absolute cation and oxygen compositions of the thin films were determined by a new method based on the simultaneous use of Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis (NRA) induced by a deuteron beam. The conditions for the deposition at room temperature of stoichiometric PZT films were established.

Physicochemical and Electrical Properties of RF Magnetron Sputtered Lead Zirconate Titanate Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
B. Ea Kim ◽  
M.C. Hugon ◽  
F. Varniere ◽  
B. Agius ◽  
H. Achard ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Lead Zirconate Titanate ◽  
Deuteron Beam ◽  
Lead Zirconate ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTDue to their high dielectric constant, good chemical stability and good insulating properties, lead zirconate titanate (PZT) thin films are considered as promising materials to replace Si3N4 and Ta2O5 for use as the capacitor dielectric in future high density DRAMs. Moreover, the ferroelectric quality of PZT films also allows use of this material in non volatile memories. In this paper, we investigate the properties of PZT films deposited from an oxide target of nominal composition {Pb1.1(Zr0.55,Ti0.45)O3} in a radio frequency (rf) magnetron sputtering system. The Pt(deposited at 450°C)/[TiN/Ti/BPSG/Si] structure annealed at 450°C at 10−6 mbar (Pt(450°C)/{TiN/Ti/BPSG/Si}450°c,10–6mbar) was used as a substrate material in this work. The PZT films were deposited at different pressures, and different substrate temperatures ranging from floating temperature to 400°C; the thicknesses of the sputtered films were in the 15–720 nm range. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative cation and oxygen compositions of the films were determined by a new method based on the simultaneous use of Rutherford Backscattering Spectrometry (RBS) and Nuclear Reaction Analysis (NRA) induced by a deuteron beam. The conditions for the deposition of stoichiometric PZT thin films were established.Electrical characterizations of the PZT films including resistivity, dielectric constant, dissipation factor were studied as a function of the temperature. From initial electrical measurements, it appears that a dielectric constant of 740 can be obtained for PZT 55/45 films deposited on a previously annealed Pt/TiN/Ti/BPSG/Si structure.

Orientation Dependence of Strontium-doped Lead Zirconate Titanate (PSZT) Thin Films on RF Magnetron Sputtering Conditions

2006 ◽  
Vol 928 ◽  
Author(s):  
Sharath Sriram ◽  
Madhu Bhaskaran ◽  
Anthony Stephen Holland ◽  
Geoffrey K Reeves
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cooling Rate ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Orientation Dependence ◽  
Grain Structure ◽  
Zirconate Titanate

ABSTRACTStudies on strontium-doped lead zirconate titanate (PSZT) have been reported for its high piezoelectric and ferroelectric properties. For PSZT to exhibit pronounced piezoelectric behaviour it must have a crystalline grain structure (perovskite orientation). This paper is a study of the deposition of PSZT thin films by RF magnetron sputtering and the effect of cooling rate, after deposition at temperatures between 500 °C and 700 °C. X-Ray Diffraction (XRD) results are used to show how a cooling rate of 5 °C/min increases the degree of perovskite orientation in sputtered films, when compared to a cooling rate of 15 °C/min. The absence of significant shifts in the positions of diffraction peak patterns in XRD results are used to demonstrate low stress in the deposited films. Atomic Force Microscope (AFM) imaging is used to show the crystalline nature of the PSZT thin films.

Preparation and ferroelectric properties of lead zirconate titanate thin films by RF magnetron sputtering

1997 ◽  
Vol 83 (6) ◽  
pp. 805-816 ◽  
Author(s):  
D. X. LU ◽  
E. M. W. WONG ◽  
E. Y. B. PUN ◽  
P. S. CHUNG ◽  
J. S. LIU ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Lead Zirconate ◽  
Zirconate Titanate

scholarly journals Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates

1994 ◽  
Vol 9 (10) ◽  
pp. 2540-2553 ◽  
Author(s):  
Keith G. Brooks ◽  
Ian M. Reaney ◽  
Radosveta Klissurska ◽  
Y. Huang ◽  
L. Bursill ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Lead Zirconate Titanate ◽  
Pyrolysis Temperature ◽  
Pyrochlore Phase ◽  
Lead Zirconate ◽  
Zirconate Titanate ◽  
Excess Lead ◽  
Kinetics Of

The nucleation, growth, and orientation of lead zirconate titanate thin films prepared from organometallic precursor solutions by spin coating on (111) oriented platinum substrates and crystallized by rapid thermal annealing was investigated. The effects of pyrolysis temperature, post-pyrolysis thermal treatments, and excess lead addition are reported. The use of post-pyrolysis oxygen anneals at temperatures in the regime of 350–450 °C was found to strongly affect the kinetics of subsequent amorphous-pyrochlore-perovskite crystallization by rapid thermal annealing. The use of such post-pyrolysis anneals allowed films of reproducible microstructure and textures [both (100) and (111)] to be prepared by rapid thermal annealing. It is proposed that such anneals and pyrolysis temperature affect the oxygen concentration/average Pb valence in the amorphous films prior to annealing. Such changes in the Pb valence state then affect the stability of the transient pyrochlore phase and thus the kinetics of perovskite crystallization.

Physicochemical and Microstructural Characterization of Rf Sputtering Magnetron Pb(ZrTi)O3 Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
F. Varniere ◽  
E. Caytan ◽  
B. Eakim ◽  
H. Achard ◽  
B. Agius
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Properties ◽  
Rf Sputtering ◽  
Argon Plasma ◽  
Deuteron Beam ◽  
Microstructural Characterization ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition

AbstractLead zirconate titanate thin films were deposited on Pt/TiN/BPSG/Si structures by sputtering an oxide target of nominal composition (Pb(Zr0.55,Ti0.45)O3 or PZT) in argon plasma. The PZT films were deposited at different pressures and different substrate temperatures ranging from floating temperature to 400°; the thicknesses of the sputtered films were in the 15-720 nm range. The absolute and relative cation and oxygen compositions of the thin films were determined by a new method based on the simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) induced by a deuteron beam. The total deposition rate and atomic ones are observed as a function of the substrate temperature and pressure. Therefore the dependence of fil composition on pressure and substrate temperature is discussed.Post-deposition annealing studies and ferroelectric properties are presented. The values of the remanent polarization, Pr, were in the range 5-7 µC/cm2, the coercitive field, Ec, between 15 and 25 kV/cm and the dielectric constant, µr, evaluated from capacitance measurements around 1200, depending on the process parameters.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

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