Metal Induced Grain Growth in Germanium and Silicon Thin Films.

1983 ◽  
Vol 25 ◽  
Author(s):  
C.R.M. Grovenor ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Phase Transformations ◽  
Grain Growth ◽  
Low Temperatures ◽  
Boundary Migration ◽  
Semiconductor Films ◽  
Interface Migration ◽  
Silicon Thin Films ◽  
And Diffusion

ABSTRACTRapid grain growth has been induced in semiconductor films at relatively low temperatures by allowing contact with metals or metal/semiconductor eutectic melts. Mechanisms by which such enhanced grain growth can occur are discussed, and Diffusion Induced Boundary Migration has been shown to be a plausible explanation for the experimental observations from the Sn/Ge, Al/Ge and Au/Ge systems. Interface migration driven by the decrease in free energy during phase transformations however provides a better explanation of the large Si grains produced on heating the Au/Si samples.

Grain Growth and Reaction in Nickel-Silicon Thin-Films

1991 ◽  
Vol 95 (11) ◽  
pp. 1410-1413 ◽  
Author(s):  
P. Knauth ◽  
A. Charaï ◽  
C. Bergman ◽  
P. Gas
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Silicon Thin Films ◽  
Nickel Silicon

Solid-Phase Amorphization in Layered Metal/Silicon thin Films

1987 ◽  
Vol 103 ◽  
Author(s):  
Menachem Nathan
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Glassy Phase ◽  
Solid Phase ◽  
General Scheme ◽  
Crystalline Compound ◽  
Nucleation Kinetics ◽  
Silicon Thin Films

ABSTRACTA general scheme for determining which metal-Si systems undergo solidphase amorphization (SPA) upon rapid thermal annealing is presented and used to investigate Ni-Si, Ti-Si, V-Si, Co-Si and Cr-Si reactions. SPA occurs only in the first three systems. With the glaring exception of Co-Si, the results agree with the thermodynamic predictions of SPA in systems in which the free energy of a glassy phase is significantly lower than the free energy of the separate components. The amorphization may also be influenced by the diffusing species and contamination. Following SPA, the first crystalline compound is determined by nucleation kinetics.

scholarly journals Amorphous, Polymorphous, and Microcrystalline Silicon Thin Films Deposited by Plasma at Low Temperatures

10.5772/63522 ◽  
2016 ◽  
Author(s):  
Mario Moreno ◽  
Miguel Domínguez ◽  
Roberto Ambrosio ◽  
Arturo Torres ◽  
Alfonso Torres ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films

Ion Induced Grain Growth in Pd

1991 ◽  
Vol 235 ◽  
Author(s):  
D. A. Lilienfeld ◽  
P. Bøorgesen ◽  
P. Meyer
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Low Temperatures ◽  
Nanocrystalline Materials ◽  
Ion Irradiation ◽  
Size Distributions ◽  
Careful Choice ◽  
Average Grain Size

ABSTRACTIon irradiation induced grain growth size distributions in Pd are examined at low temperatures. Two features are observed: 1) A majority of the grains saturate in size. 2) Some grains achieve sizes much larger than the average grain size and continue to grow with ion dose. However, by careful choice of ion mass and ion dose, it is possible to produce a sample possessing a monomodal grain size. This process will have applications in producing thin films of nanocrystalline materials.

Solute Drag and Entropy Production - Two Approaches to the Same Phenomenon

2004 ◽  
Vol 467-470 ◽  
pp. 3-10 ◽  
Author(s):  
Mats Hillert
Keyword(s):  
Gibbs Energy ◽  
Grain Boundary ◽  
Phase Transformations ◽  
Entropy Production ◽  
Grain Growth ◽  
Historical Development ◽  
Boundary Migration ◽  
Solute Drag ◽  
Grain Boundary Migration ◽  
Solute Atoms

The historical development of the two approaches to the interaction between solute atoms and a migrating interface, based on dissipation of Gibbs energy and on solute drag, are reviewed and compared. In the way the solute drag was formulated long ago for recrystallization and grain growth, it does not apply to phase transformations. With a new solute drag equation, which was recently proposed, it turns out that the two approaches are completely equivalent for phase transformations as well as grain boundary migration.

The Instability of Polycrystalline Thin Films: Experiment and Theory

1988 ◽  
Vol 121 ◽  
Author(s):  
K. T. Miller ◽  
F. F. Lange ◽  
D. B. Marshall
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Free Energy ◽  
Grain Growth ◽  
Spin Coating ◽  
Polycrystalline Thin Film ◽  
Film Stability ◽  
Zirconium Acetate ◽  
Polycrystalline Thin Films ◽  
Thin Film Stability

ABSTRACTDense polycrystalline thin films of ZrO2 (3 and 8 mol% Y2O3) were produced by the pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating solutions of zirconium acetate. With grain growth, these films broke into islands of ZrO2 grains. Thermodynamic calculations show that this break up lowers the free energy of the system. These calculations also predict the conditions needed for polycrystalline thin film stability.

EELS microanalysis of polycrystalline silicon thin films for solar cells grown at low temperatures

2000 ◽  
Vol 63 (2) ◽  
pp. 177-184 ◽  
Author(s):  
Michael Stöger ◽  
Michael Nelhiebel ◽  
Peter Schattschneider ◽  
Viktor Schlosser ◽  
Alexander Breymesser ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films
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