Ion Induced Grain Growth in Pd

1991 ◽  
Vol 235 ◽  
Author(s):  
D. A. Lilienfeld ◽  
P. Bøorgesen ◽  
P. Meyer
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Low Temperatures ◽  
Nanocrystalline Materials ◽  
Ion Irradiation ◽  
Size Distributions ◽  
Careful Choice ◽  
Average Grain Size

ABSTRACTIon irradiation induced grain growth size distributions in Pd are examined at low temperatures. Two features are observed: 1) A majority of the grains saturate in size. 2) Some grains achieve sizes much larger than the average grain size and continue to grow with ion dose. However, by careful choice of ion mass and ion dose, it is possible to produce a sample possessing a monomodal grain size. This process will have applications in producing thin films of nanocrystalline materials.

Ion Irradiation Induced Grain Growth in Metal Thin Films

1988 ◽  
Vol 100 ◽  
Author(s):  
Joyce. C. Liu ◽  
J. W. Mayer
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Material Properties ◽  
Low Dose ◽  
Ion Irradiation ◽  
High Dose ◽  
Atomic Mobility ◽  
Metal Thin Films ◽  
Dose Regime

ABSTRACTThe dependence of ion irradiation induced grain growth on collision and material properties were studied in metal and alloy thin films. The uniform grain size increased with ion dose in the low dose regime; and the growth saturated in the high dose regime. The saturated grain size was determined 'by the cascade dimension as well as the atomic mobility. The growth was further influenced by the temperature, composition and impurity.

The instability of polycrystalline thin films: Experiment and theory

1990 ◽  
Vol 5 (1) ◽  
pp. 151-160 ◽  
Author(s):  
K. T. Miller ◽  
F. F. Lange ◽  
D. B. Marshall
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Film Thickness ◽  
Grain Growth ◽  
Spherical Surface ◽  
Polycrystalline Film ◽  
Yttrium Nitrate ◽  
Zirconium Acetate ◽  
Polycrystalline Thin Films ◽  
Average Grain Size

Dense polycrystalline thin films of ZrO2 (3 and 8 mol % Y2O3) were produced by the pyrolysis of zirconium acetate precursor films, which were deposited on single crystal Al2O3 substrates by spin-coating aqueous solutions of zirconium acetate and yttrium nitrate. Dense films were heat treated to encourage grain growth. With grain growth, these films broke into islands of ZrO2 grains. Identical areas were examined after each heat treatment to determine the mechanism that causes the polycrystalline film to uncover the substrate. Two mechanisms were detailed: (a) for a composition which inhibited grain growth and produced a polycrystalline film with very small grains, the smallest grains would disappear to uncover the substrate, and (b) for a composition which did not inhibit grain boundary motion, larger grains grew by enveloping a smaller grain and then developed more spherical surface morphologies, uncovering the substrate at three grain junctions. In both cases, the breakup phenomenon occurred when the average grain size was larger than the film thickness. Thermodynamic calculations show that this breakup lowers the free energy of the system when the grain-size-to-film-thickness ratio exceeds a critical value. These calculations also predict the conditions needed for polycrystalline thin film stability.

Grain Growth in Al-(Cu, Pd, Nb) Thin Films

1993 ◽  
Vol 309 ◽  
Author(s):  
J.D. Mis ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Grain Growth ◽  
Weight Percent ◽  
Size Distributions ◽  
Precipitate Morphology ◽  
X Ray ◽  
Transmission Electron ◽  
Grain Size Distributions

AbstractThe microstructure of 1 μim thick Al films containing 0.5 and 2%Cu (weight percent), 0.3%Pd, and 0.3%Pd-0.3%Nb were investigated by transmission electron microscopy (TEM) and energy dispersive x-ray spectroscopy (EDS) as a function of isochronal and isothermal anneals. The grain size, grain size distribution, and precipitate morphology of these films was measured from 200 to 500ºC, with the activation energy for grain growth (Ea) determined for I h anneals at 200, 300, 400 and 500ºC. Normal grain growth was recorded for the A1Cu films annealed at temperatures ≤400ºC; however secondary grain growth occurred in the AI-2Cu film annealed for I h at 500ºC, with grains as large as 16 μm in diameter observed. Grain growth in the AI-0.3Pd films resulted in strongly bi-modal grain size distributions, with the onset ofsignificant grain growth retarded for I h anneals at temperatures ≤300ºC.The addition of Nb to the AI-0.3Pd film resulted in monomodal grain size distributions over the entire temperature range. The role of crystallographic texture on grain growth in thin films is discussed.

Effect of Annealing Conditions on the Grain Size of Nanocrystalline Copper Thin Films

2008 ◽  
Vol 587-588 ◽  
pp. 483-487 ◽  
Author(s):  
Sonia Simões ◽  
Rosa Calinas ◽  
P.J. Ferreira ◽  
M. Teresa Vieira ◽  
Filomena Viana ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Grain Growth ◽  
Copper Substrate ◽  
Nanocrystalline Metals ◽  
Nanocrystalline Copper ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Average Grain Size

Nanocrystalline metals demonstrate a broad range of fascinating mechanical properties at the nanoscale, namely a significant increase in hardness and superior yield stress. In this regard, understanding grain growth in nanocrystalline metals is crucial, particularly because nano size grains are characterized by a high curvature, which results in a high driving force for grain growth. In this work, the effect of annealing conditions on grain size of copper nanocrystalline thin films was investigated. The nanocrystalline copper thin films were first deposited by d.c. magnetron sputtering on a copper substrate. The specimens were then annealed in vacuum at 100, 300 and 500°C from 10 minutes to 5 hours. Transmission electron microscopy observations revealed that the as-deposited thin films have a bimodal grain size distribution; an average grain size of 43±2nm and the presence of nanotwins. Abnormal grain growth was observed for some samples annealed. Increasing the annealing time induced significant grain growth and promoted twin formation in the larger grains. Finally, the hardness of these nanocrystalline Cu thin films was determined using atomic force microscope. The relation between mechanical properties, annealing conditions and grain size was analyzed.

Grain growth and texture development in lithium fluoride thin films

2008 ◽  
Vol 23 (2) ◽  
pp. 452-462 ◽  
Author(s):  
Hakkwan Kim ◽  
Alexander H. King
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Size Distribution ◽  
Grain Growth ◽  
Annealing Time ◽  
Lithium Fluoride ◽  
Dark Field ◽  
Texture Development ◽  
Size Distributions ◽  
Grain Size Distributions

We have studied grain-growth and texture development in polycrystalline lithium fluoride thin films using dark-field transmission electron microscopy. We demonstrate that we can isolate the size distribution of 〈111〉 surface normal grains from the overall size distribution, based on simple and plausible assumptions about the texture. The {111} texture formation and surface morphology were also observed by x-ray diffraction and atomic force microscopy, respectively. The grain-size distributions become clearly bimodal as the annealing time increases, and we deduce that the short-time size distributions are also a sum of two overlapping peaks. The smaller grain-size peak in the distribution corresponds to the {111}-oriented grains, which do not grow significantly, while all other grains increase in size with annealing time. A novel feature of the LiF films is that the {111} texture component strengthens with annealing, despite the absence of growth for these grains, through the continued nucleation of new grains.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals On the multiplying factor for the estimation of the average grain size in thin films

2021 ◽  
Vol 196 ◽  
pp. 113748
Author(s):  
Srinivas K. Yadavalli ◽  
Mingyu Hu ◽  
Nitin P. Padture
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Average Grain Size

LiNiO2 Thin Films Fabricated by Diffusion of Li on Ni Tapes

2007 ◽  
Vol 336-338 ◽  
pp. 505-508
Author(s):  
Cheol Jin Kim ◽  
In Sup Ahn ◽  
Kwon Koo Cho ◽  
Sung Gap Lee ◽  
Jun Ki Chung
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Grain Size ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Cold Isostatic Pressing ◽  
Tube Furnace ◽  
Treatment Conditions ◽  
Average Grain Size ◽  
Cold Rolling And Annealing

LiNiO2 thin films for the application of cathode of the rechargeable battery were fabricated by Li ion diffusion on the surface oxidized NiO layer. Bi-axially textured Ni-tapes with 50 ~ 80 μm thickness were fabricated using cold rolling and annealing of Ni-rod prepared by cold isostatic pressing of Ni powder. Surface oxidation of Ni-tapes were conducted using tube furnace or line-focused infrared heater at 700 °C for 150 sec in flowing oxygen atmosphere, resulted in NiO layer with thickness of 400 and 800 μm, respectively. After Li was deposited on the NiO layer by thermal evaporation, LiNiO2 was formed by Li diffusion through the NiO layer during subsequent heat treatment using IR heater with various heat treatment conditions. IR-heating resulted in the smoother surface and finer grain size of NiO and LiNiO2 layer compared to the tube-furnace heating. The average grain size of LiNiO2 layer was 0.5~1 μm, which is much smaller than that of sol-gel processed LiNiO2. The reacted LiNiO2 region showed homogeneous composition throughout the thickness and did not show any noticeable defects frequently found in the solid state reacted LiNiO2, but crack and delamination between the reacted LiNiO2 and Ni occurred as the reaction time increased above 4hrs.

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