Grain Growth and Reaction in Nickel-Silicon Thin-Films

1991 ◽  
Vol 95 (11) ◽  
pp. 1410-1413 ◽  
Author(s):  
P. Knauth ◽  
A. Charaï ◽  
C. Bergman ◽  
P. Gas
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Silicon Thin Films ◽  
Nickel Silicon

Metal Induced Grain Growth in Germanium and Silicon Thin Films.

1983 ◽  
Vol 25 ◽  
Author(s):  
C.R.M. Grovenor ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Free Energy ◽  
Phase Transformations ◽  
Grain Growth ◽  
Low Temperatures ◽  
Boundary Migration ◽  
Semiconductor Films ◽  
Interface Migration ◽  
Silicon Thin Films ◽  
And Diffusion

ABSTRACTRapid grain growth has been induced in semiconductor films at relatively low temperatures by allowing contact with metals or metal/semiconductor eutectic melts. Mechanisms by which such enhanced grain growth can occur are discussed, and Diffusion Induced Boundary Migration has been shown to be a plausible explanation for the experimental observations from the Sn/Ge, Al/Ge and Au/Ge systems. Interface migration driven by the decrease in free energy during phase transformations however provides a better explanation of the large Si grains produced on heating the Au/Si samples.

Kinetics of grain growth in doped polycrystalline silicon thin films

1988 ◽  
Vol 163 ◽  
pp. 383-386 ◽  
Author(s):  
S. Kalainathan ◽  
R. Dhanasekaran ◽  
P. Ramasamy
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Kinetics Of

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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