EELS microanalysis of polycrystalline silicon thin films for solar cells grown at low temperatures

2000 ◽  
Vol 63 (2) ◽  
pp. 177-184 ◽  
Author(s):  
Michael Stöger ◽  
Michael Nelhiebel ◽  
Peter Schattschneider ◽  
Viktor Schlosser ◽  
Alexander Breymesser ◽  
...  
2007 ◽  
Vol 280-283 ◽  
pp. 1147-1148 ◽  
Author(s):  
Hai Feng Li ◽  
Yong Huang ◽  
Zhi Jian Wan ◽  
Hou Xing Zhang ◽  
Li Ming Zhang ◽  
...  

The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.


1997 ◽  
Vol 48 (1-4) ◽  
pp. 321-326 ◽  
Author(s):  
Yuwen Zhao ◽  
Zhongming Li ◽  
Saoqi He ◽  
Xianbo Liao ◽  
Shuran Sheng ◽  
...  

1985 ◽  
Vol 59 ◽  
Author(s):  
Ronald N. Legge ◽  
James F. Brown

ABSTRACTThe effect of implanted hydrogen on the resistivity of polycrystalline silicon films has been investigated. The observed reduction in resistivity due to hydrogen is most pronounced for lightly doped films, and is accentuated by a 450°C anneal. An increase in Hall mobility is also observed. The pre-implant resistivity is completely recovered by annealling at 600°C. Diffusion of hydrogen at low temperatures is monitored by local resistivity changes detected with spreading resistance measurements.


Author(s):  
Hai Feng Li ◽  
Yong Huang ◽  
Zhi Jian Wan ◽  
Hou Xing Zhang ◽  
Li Ming Zhang ◽  
...  

2014 ◽  
Vol 92 ◽  
pp. 27-30 ◽  
Author(s):  
Chaowei Xue ◽  
Jialiang Huang ◽  
Jing Rao ◽  
Sergey Varlamov

Author(s):  
A. Descoeudres ◽  
J. Geissbiihler ◽  
J. Horzel ◽  
A. Lachowicz ◽  
J. Levrat ◽  
...  

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