Defect Structures in Heteroepitaxial InAs/GaAs and GaAs/InAs Grown by Atomic Layer Molecular Beam Epitaxy
Keyword(s):
ABSTRACTA Transmission Electron Microscopy (TEM) study on ALMBE grown InAs/GaAs (001) is presented. The density and the types of defects contained in InAs and GaAs layers are clearly different. A relation between the planar defects in these layers and the compressive and extensive nature of the growth for each layer is found. Atomic Layer Molecular Beam Epitaxy (ALMBE) grown InAs layers possess a better quality of defects than other InAs layers grown on GaAs (001) by conventional MBE. Several ways of nucleation are presented as possible for explaining the existence of the different defects found in the studied heterostructure.
2016 ◽
Vol 30
(20)
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pp. 1650269
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1999 ◽
Vol 38
(Part 1, No. 8)
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pp. 4673-4675
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1995 ◽
Vol 150
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pp. 388-393
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