The Effect of Hydrogenation on the Electrical Properties of Crystalline Silicon
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ABSTRACTHydrogen ties Si dangling bonds at defects as well as near impurities. Defect passivation leads to dramatically lower surface recombination and increased minority carrier lifetime. Dopant neutralization increases the resistivity of the crystal and the mobility of carriers. The neutralization of donors and acceptors is optimum at different temperatures. Deep levels can also be neutralized.
1991 ◽
Vol 62
(1)
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pp. 99-102
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1999 ◽
Vol 70
(10)
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pp. 4044-4046
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2011 ◽
Vol 675-677
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pp. 101-104
2021 ◽
Vol 123
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pp. 105497
2015 ◽
Vol 242
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pp. 126-132
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