The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon
Keyword(s):
Band Gap
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AbstractWe have investigated the effects of oxygen codoping and thermal annealing on the deep level spectrum and carrier lifetime of Er implanted crystalline Si. It is found that oxygen codoping produces a dramatic modification in the concentration and energetic position of Er-related deep levels in the Si band gap. In particular the formation of Er-O complexes is shown to produce a promotion from deep to shallow levels. This effect is the major responsible of the enhancement of Er donor behaviour in presence of oxygen and also produces a large increase in the minority carrier lifetime
2018 ◽
Vol 36
(4)
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pp. 041201
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1991 ◽
Vol 62
(1)
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pp. 99-102
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1999 ◽
Vol 70
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pp. 4044-4046
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2011 ◽
Vol 675-677
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pp. 101-104
2021 ◽
Vol 123
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pp. 105497
2015 ◽
Vol 242
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pp. 126-132
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