A Lifetime Study of Oxygen Agglomeration Induced Defects in Cz Silicon Crystal by Surface Photovoltage (SPV)

ABSTRACTIn this study the effect of oxygen agglomeration on minority carrier diffusion length in as-grown p-CZ silicon has been studied in detail. Oxygen-related defects were found acting as minority carrier traps in p-CZ silicon. These defects are not found in either oxygen-free FZ silicon or in n-type CZ silicon samples. The traps have profound effect on low excitation level diffusion length values leading to an apparent lifetime decrease by as much as an order of magnitude. This effect can be eliminated by a steady state “bias light” superimposed on the chopped excitation light. The traps can be annihilated and re-generated by thermal treatments.Our study has also revealed oxygen-induced recombination centers. Significant improvement in lifetime is realized in p-type CZ silicon after heat treatment between 550°C and 800°C.

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Investigation of minority carrier traps in p-type mc-Si: Effect of firing and laser annealing

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2021.111341 ◽

2021 ◽

Vol 232 ◽

pp. 111341

Author(s):

Saman Jafari ◽

Ziv Hameiri

Keyword(s):

Laser Annealing ◽

Minority Carrier ◽

Carrier Traps ◽

P Type ◽

Si Effect

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Detection of minority carrier traps in p-type 4H-SiC

Applied Physics Letters ◽

10.1063/1.4867200 ◽

2014 ◽

Vol 104 (9) ◽

pp. 092105 ◽

Cited By ~ 9

Author(s):

G. Alfieri ◽

T. Kimoto

Keyword(s):

Minority Carrier ◽

Carrier Traps ◽

P Type

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Effect of Annealing Temperature on the Properties of Silicon Crystal

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.415-417.1323 ◽

2011 ◽

Vol 415-417 ◽

pp. 1323-1326 ◽

Cited By ~ 1

Author(s):

Qiu Yan Hao ◽

Xin Jian Xie ◽

Bing Zhang Wang ◽

Cai Chi Liu

Keyword(s):

Annealing Temperature ◽

Carrier Lifetime ◽

Minority Carrier ◽

Silicon Crystal ◽

Minority Carrier Lifetime ◽

Interstitial Oxygen ◽

Oxygen Precipitation ◽

Oxygen Donor ◽

Infrared Spectrometer ◽

Effect Of Oxygen

In order to investigate the performance of silicon single crystal depended on the annealing temperature, the minority carrier lifetime, the resistivity and oxygen concentration after different temperature annealing in Ar ambient were examined. And the effect of oxygen and related defects formed during annealed on the minority carrier lifetime were analyzed by microwave photoconductivity method, Fourier transform infrared spectrometer and four-probe measurement. The results indicate that after 450°C annealing for 30h, the resistivity and minority carrier lifetime of silicon increase significantly, while the concentration of interstitial oxygen decreases. After the annealing at 650°C, oxygen donor can be removed and the resistivity and the minority carrier lifetime decrease. During the high-temperature (above 650°C) annealing, the oxygen precipitation can decrease the minority carrier lifetime silicon.

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Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.156-158.395 ◽

2009 ◽

Vol 156-158 ◽

pp. 395-400 ◽

Cited By ~ 1

Author(s):

Ville Vähänissi ◽

Antti Haarahiltunen ◽

H. Talvitie ◽

M.I. Asghar ◽

Marko Yli-Koski ◽

...

Keyword(s):

Low Temperature ◽

Sheet Resistance ◽

Low Temperatures ◽

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Thermal Budget ◽

Phosphorus Diffusion ◽

Oxygen Precipitation ◽

Effect Of Oxygen

Low temperature boron and phosphorous diffusion gettering (BDG and PDG) of iron in Czochralski-grown silicon were experimentally studied. Differences and similarities between the gettering techniques were clarified by using intentionally iron contaminated wafers emphasizing especially the effect of oxygen. Experiments showed that the surprisingly high gettering effects of BDG could be explained by B-Si precipitates. Oxygen precipitation was seen to decrease minority carrier diffusion length after long gettering at low temperatures in both BDG and PDG. In the case of BDG oxygen precipitation affected more as a higher thermal budget was needed to obtain similar sheet resistance to that of PDG. According to experiments the efficiency of BDG can not be concluded from the sheet resistance, whereas the efficiency of PDG can. This has practical influences in a process control environment.

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Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing

MRS Proceedings ◽

10.1557/proc-106-89 ◽

1987 ◽

Vol 106 ◽

Cited By ~ 4

Author(s):

K. Masri ◽

J. P. Boyeaux ◽

S. N. Kumar ◽

L. Mayet ◽

A. Laugier

Keyword(s):

Grain Boundary ◽

Light Beam ◽

High Performance ◽

Minority Carrier ◽

Diffusion Length ◽

Induced Current ◽

Minority Carrier Diffusion Length ◽

A Value ◽

Recombination Velocity ◽

P Type

ABSTRACTA high performance light-beam-induced-current (LBIC) analyser has been used to determine the recombination velocity at the grain boundary (S) and the minority-carrier diffusion length (L). For this purpose a Schottky diode (Cr/Si) was fabricated using a p-type silicon bicrystal (1Ω cm, Σ13 grain boundary). The contacts were obtained by a “cold” technology. The diffusion length, determined by the method proposed by Ioannou, was subsequently fitted into the model proposed by Marek to evaluate the recombination velocity by the curve-fitting of the experimental and theoretical photocurrent profiles. A value of S = 2.104 cm/s was thus obtained. The influence of the thin oxide layer at the Cr/Si interface is also discussed.

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Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs

Journal of Applied Physics ◽

10.1063/1.5002630 ◽

2017 ◽

Vol 122 (11) ◽

pp. 115702 ◽

Cited By ~ 12

Author(s):

M. Niemeyer ◽

J. Ohlmann ◽

A. W. Walker ◽

P. Kleinschmidt ◽

R. Lang ◽

...

Keyword(s):

Minority Carrier ◽

Diffusion Length ◽

Minority Carrier Diffusion Length ◽

Carrier Diffusion ◽

P Type

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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.355 ◽

2005 ◽

Vol 483-485 ◽

pp. 355-358 ◽

Cited By ~ 2

Author(s):

Katsunori Danno ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami

Keyword(s):

Electric Fields ◽

Electron Emission ◽

Minority Carrier ◽

Deep Level ◽

Deep Trap ◽

Dlts Spectrum ◽

Carrier Traps ◽

P Type ◽

Two Peaks ◽

Dlts Spectra

Midgap levels in 4H-SiC epilayers have been investigated by DLTS. The EH6/7 center (Ec-1.55 eV) is the dominant deep level as observed in DLTS spectra from n-type epilayers. The activation energy of EH6/7 center is unchanged regardless of applied electric fields, indicating that the charge state of EH6/7 center may be neutral after electron emission (acceptor-like). A DLTS spectrum for a p-type epilayer in the temperature range from 90 to 830 K is dominated by two peaks, D center and a deep trap at 1.49 eV from the valence band edge. Minority carrier traps have been also investigated by DLTS using pn diodes. Two minority carrier traps with activation energies of 1.0 eV and 1.43 eV have been detected.

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Investigating Minority-Carrier Traps in p-type Cu(InGa)Se2 Using Deep Level Transient Spectroscopy

MRS Proceedings ◽

10.1557/proc-865-f5.35 ◽

2005 ◽

Vol 865 ◽

Author(s):

Steven W. Johnston ◽

Jehad A. M. AbuShama ◽

Rommel Noufi

Keyword(s):

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Thermionic Emission ◽

Small Peak ◽

Carrier Traps ◽

Transient Spectroscopy ◽

Lower Temperature ◽

And Shifts ◽

P Type

AbstractMeasurements of p-type Cu(InGa)Se2 (CIGS) using deep-level transient spectroscopy (DLTS) show peaks associated with minority-carrier traps, even though data were collected using reverse bias conditions not favorable to injecting minority-carrier electrons. These DLTS peaks occur in the temperature range of 50 to 150 K for the rate windows used and correspond to electron traps having activation energies usually in the range of 0.1 to 0.2 eV for alloys of CIS, CGS, and CIGS. The peak values also depend on the number of traps filled. For short filling times of 10 μs to 100 μs, a small peak appears. As the DLTS filling pulse width increases, the peak increases in response to more traps being filled, but it also broadens and shifts to lower temperature suggesting that a possible series of trap levels, perhaps forming a defect band, are present. The peaks usually saturate in a timeframe of seconds. These filling times are sufficient for electrons to fill traps near the interface from the n-type side of the device due to a thermionic emission current. Admittance spectroscopy data for the same samples are shown for comparison.

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