Influence of The Growth Temperature on The Presence of Composition Inhomogeneities in In0.52Al0.48As Layers Grown by MBE on InP Substrates

1992 ◽  
Vol 263 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
A. Hierms ◽  
J.R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Critical Temperature ◽  
Growth Temperature ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Sample Area ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTBy using Transmission Electron Microscopy we have studied the presence of composition inhomogeneities in In0.52Al0.48As layers grown on (100) InP. We have found a critical temperature equal to 550°C above which composition inhomogeneities start to appear nonuniformly distributed over the sample area. However, as the growth temperature increases they cover the whole layer. Furtermore, the density of stacking faults and threading dislocations increases for growth temperatures beyond the optimum value of 530°C.

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

1991 ◽  
Vol 240 ◽  
Author(s):  
F. Peiro ◽  
A. Cornet ◽  
A. Herms ◽  
J. R. Morante ◽  
A. Georgakilas ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Structural Defects ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Inp Substrates

ABSTRACTThe crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

Study of the Origin of Misorientation in GaN Grown by Pendeo-Epitaxy

2002 ◽  
Vol 743 ◽  
Author(s):  
D. N. Zakharov ◽  
Z. Liliental-Weber ◽  
A. M. Roskowski ◽  
S. Einfeldt ◽  
R. F. Davis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Density ◽  
Growth Temperature ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Edge Dislocations ◽  
Seed Layers

ABSTRACTGrowth of pendeo-epitaxial (PE) layers introduces misorientation between the seed layers and the overgrown wing layers. The origin of this misorientation has been studied by Transmission Electron Microscopy (TEM) using a set of samples in which subsequent procedures utilized in PE were applied, i.e. growth of GaN template, stripe etching, annealing at the growth temperature of the PE layers and final PE growth. It was shown that etching of seed-stripes did not change the type of defects or their distribution. However, heating to the PE growth temperature drastically modified the surface and V-shaped pits were formed. The surface became smooth again after the PE growth took place. Overgrowth of the V-shaped pits resulted in formation of edge threading dislocations over a seed-stripe region with a dislocation density of 8.0×108 cm−2. Formation of new edge dislocations over the seed can have an influence on the misorientation between the PE grown regions.

Dislocations and stacking faults in stainless steel

1957 ◽  
Vol 240 (1223) ◽  
pp. 524-538 ◽  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
Grain Boundaries ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Thin Sections ◽  
Partial Dislocations ◽  
Transmission Electron

Further experiments by transmission electron microscopy on thin sections of stainless steel deformed by small amounts have enabled extended dislocations to be observed directly. The arrangement and motion of whole and partial dislocations have been followed in detail. Many of the dislocations are found to have piled up against grain boundaries. Other observations include the formation of wide stacking faults, the interaction of dislocations with twin boundaries, and the formation of dislocations at thin edges of the foils. An estimate is made of the stacking-fault energy from a consideration of the stresses present, and the properties of the dislocations are found to be in agreement with those expected from a metal of low stacking-fault energy.

SiC NWs Grown on Silicon Substrate Using Fe as Catalyst

2014 ◽  
Vol 806 ◽  
pp. 39-42
Author(s):  
Paola Lagonegro ◽  
Matteo Bosi ◽  
Giovanni Attolini ◽  
Marco Negri ◽  
Sathish Chander Dhanabalan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Growth Temperature ◽  
Silicon Substrate ◽  
Growth Direction ◽  
Carrier Gas ◽  
Sic Nanowires ◽  
Transmission Electron

We report on the synthesis of SiC nanowires (NWs) using iron as catalyst. The NWs were grown on silicon substrate by vapour-liquid-solid (VLS) mechanism with propane and silane as precursors, both 3% diluted in hydrogen, and hydrogen as carrier gas. The growth temperature was 1250°C, to reach the eutectic values of the Si-Fe alloy and to permit the VLS mechanism. The as-grown SiC nanowires were characterized by scanning and transmission electron microscopy. The nanowires are from 30 to 100 nm in diameter and several μm in length, with <111> growth direction.

Structural Characterization of CF-PVT Grown Bulk 3C-SiC

2008 ◽  
Vol 600-603 ◽  
pp. 67-70 ◽  
Author(s):  
Alkyoni Mantzari ◽  
Frédéric Mercier ◽  
Maher Soueidan ◽  
Didier Chaussende ◽  
Gabriel Ferro ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Structural Properties ◽  
Structural Characterization ◽  
Stacking Faults ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transmission Electron ◽  
Continuous Feed

The aim of the present work is to study the structural properties of 3C-SiC which is grown on (0001) 6H-SiC and on (100) 3C-SiC (Hoya) seeds using the Continuous Feed Physical Vapor Transport (CF-PVT) method. Transmission Electron Microscopy (TEM) observations confirm that the overgrown layer is of the 3C-SiC polytype. In the case of the 6H-SiC substrate, microtwins (MTs), stacking faults (SFs) and dislocations (D) are observed at the substrate-overgrown interface with most of the dislocations annihilating within the first few µm from the interface. In the case of 3C-SiC crystals grown on 3C seeds, repeated SFs are formed locally and also coherent (111) twins of 3C-SiC are frequently observed near the surface. The SF density is reduced at the uppermost part of the grown material.

HRTEM Study of the Extended Defect Structure in Epitaxial Ba0.3Sr0.7TiO3 Thin Films Grown on (001) LaAlO3

2002 ◽  
Vol 751 ◽  
Author(s):  
C.J. Lu ◽  
L.A. Bendersky ◽  
K. Chang ◽  
I. Takeuchi
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Defect Structure ◽  
Stacking Faults ◽  
Threading Dislocations ◽  
Extended Defect ◽  
Displacement Vectors ◽  
Transmission Electron ◽  
First Time ◽  
Dislocation Dissociation

ABSTRACTThe defect structure of a 350-nm-thick epitaxial Ba0.3Sr0.7TiO3 thin film grown on (001) LaAlO3 has been investigated using conventional and high-resolution transmission electron microscopy. The predominant defects in the film are threading dislocations (TDs) with Burgers vectors b = <100> and <110>. A high density of extended stacking faults (SFs) with displacement vectors R = (1/2)<110> were also observed in the near-interface region of the film. The faults are associated with dissociated dislocations and partial halfloops. Some findings about dislocation dissociation and the atomic structure of the (1/2)<110> faults are observed for the first time in perovskites to our knowledge. The mechanisms for the generation, dissociation and evolution of the TDs as well as for the formation mechanism of the SFs are discussed.

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 468 ◽  
Author(s):  
Jing-Hong Li ◽  
Olga M. Kryliouk ◽  
Paul H. Holloway ◽  
Timothy J. Anderson ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Metalorganic Chemical

ABSTRACTMicrostructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

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