Ion Beam Modification of Ceramics

MRS Proceedings ◽

10.1557/proc-27-385 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 18

Author(s):

C. J. Mchargue ◽

C. W. White ◽

B. R. Appleton ◽

G. C. Farlow ◽

J. M. Williams

Keyword(s):

Ion Beam ◽

Structure And Properties ◽

Charge Balance ◽

Implantation Energy ◽

Ion Beam Modification ◽

Implantation Temperature ◽

Local Charge ◽

Ion Damage ◽

Ion Species ◽

Bonding Characteristics

ABSTRACTAlterations to the structure and properties of ceramics are complex due to the range of bonding types encountered and the necessity for maintaining local charge balance. Ion damage can occur as a result of ionizing effects as well as displacement collisions. Ion species, implantation temperature, implantation energy, and the specific bonding characteristics of the host are important parameters in determining the structure and properties of implanted ceramics. Some of these effects will be illustrated for Al2O3 implanted with chromium or zirconium and silicon carbide implanted with chromium.

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Ion Beam Modification of Carbon Materials

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.107.107 ◽

2005 ◽

Vol 107 ◽

pp. 107-110

Author(s):

Masaya Iwaki

Keyword(s):

Electrical Conductivity ◽

Wear Resistance ◽

Cell Adhesion ◽

Ion Implantation ◽

Electrochemical Properties ◽

Surface Properties ◽

Carbon Materials ◽

Ion Beam ◽

Ion Beam Modification ◽

Ion Species

A study has been made of surface properties of carbon materials modified by ion beams. Substrates used were natural diamonds, glass-like carbon plates and polymer sheets. Ion species were chemically-active elements such as C, N and O, inert gas elements such as He, Ne and Ar, and metallic elements such as Cr and Ti. It was found that diamond becomes electrically conductive in ion implanted layers, which are amorphous or graphite-like structures. Electrical conductivity depends on implanted species, doses and target temperatures. It was found that glass-like carbon consisting of graphite and disordered graphite becomes amorphous due to ion beam bombardment. Amorphization causes the wear resistance to improve. The electrochemical properties changes depending on implanted species. The wear resistance and electrochemical properties depended on the target temperature during ion implantation. Ion beam bombardment to polymers has been carried out to control the electrical conductivity, cell adhesion and bio-compatibility. The electrical conductivity of polyimide films increases as the dose increases. The saturated sheet resistivity of implanted layers depends on ion species, dose and dose rate. It was found that the cell adhesion can be controlled by ion beam bombardment. The results were used in the fields of clinical examinations. In summary, ion beam bombardment to carbon materials is useful to control the carbon structures and surface properties depending on ion implantation conditions.

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Ion Beam Modification of Silicone Rubber

MRS Proceedings ◽

10.1557/proc-153-223 ◽

1989 ◽

Vol 153 ◽

Cited By ~ 2

Author(s):

Yoshiaki Suzuki ◽

Masahiro Kusakabe ◽

Masaya Iwaki ◽

Masaaki Suzuki

Keyword(s):

Raman Spectroscopy ◽

Ion Implantation ◽

Silicone Rubber ◽

Ion Beam ◽

Chemical Properties ◽

Ion Beam Modification ◽

Chemical States ◽

Ft Ir ◽

Ion Species ◽

Ion Implanted

AbstractIon implantation in silicone rubber has been carried out in order to study its effects on structure and chemical states. H+-, He+-, C+-, N+-, N2+-, O+-, O2+-, Ne+-, Na+-, Ar+-, and K+- ion implantations were performed at an energy of 150 keV with doses ranging from 1×1013 to 1×1017 ions/cm2 at room temperature. The depth profiles of the ion implanted elements and host elements were investigated by means of XPS and SIMS. The chemical properties were studied by FT-IR-ATR and Raman spectroscopy. XPS results indicated that most of the implanted elements showed a Gaussian like distribution in the silicone polymer matrix, but implanted He+, Ne+, and Ar+ could not be detected. Results of FT-IR-ATR showed that ion implantation broke CH3 and Si-O bonds to form new radicals such as SiOH, >C=0, CH2 and SiHx and the effects varied depending on the implanted ion species. The Raman spectroscopy results showed that ion implanted silicone contained both sp3 and sp2 bonded carbon.

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Ion beam modification of the structure and properties of hexagonal boron nitride: An infrared and X-ray diffraction study

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2014.01.031 ◽

2014 ◽

Vol 331 ◽

pp. 140-143 ◽

Cited By ~ 16

Author(s):

E. Aradi ◽

S.R. Naidoo ◽

D.G. Billing ◽

D. Wamwangi ◽

I. Motochi ◽

...

Keyword(s):

Boron Nitride ◽

Diffraction Study ◽

Hexagonal Boron Nitride ◽

Ion Beam ◽

Structure And Properties ◽

X Ray Diffraction ◽

X Ray ◽

Ion Beam Modification

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Title Page - Ion Beam Modification of Materials

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(03)00677-3 ◽

2003 ◽

Keyword(s):

Ion Beam ◽

Title Page ◽

Ion Beam Modification ◽

Modification Of Materials

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Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

ISTFA 2004: Conference Proceedings from the 30th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2004p0534 ◽

2004 ◽

Author(s):

Valery Ray

Keyword(s):

Side Effects ◽

Aspect Ratio ◽

Integrated Circuits ◽

High Aspect Ratio ◽

Focused Ion Beam ◽

Ion Beam ◽

Enabling Technology ◽

Si Substrate ◽

Ion Beam Modification ◽

The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

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