Ion Beam Modification of Silicone Rubber

1989 ◽  
Vol 153 ◽  
Author(s):  
Yoshiaki Suzuki ◽  
Masahiro Kusakabe ◽  
Masaya Iwaki ◽  
Masaaki Suzuki
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Silicone Rubber ◽  
Ion Beam ◽  
Chemical Properties ◽  
Ion Beam Modification ◽  
Chemical States ◽  
Ft Ir ◽  
Ion Species ◽  
Ion Implanted

AbstractIon implantation in silicone rubber has been carried out in order to study its effects on structure and chemical states. H+-, He+-, C+-, N+-, N2+-, O+-, O2+-, Ne+-, Na+-, Ar+-, and K+- ion implantations were performed at an energy of 150 keV with doses ranging from 1×1013 to 1×1017 ions/cm2 at room temperature. The depth profiles of the ion implanted elements and host elements were investigated by means of XPS and SIMS. The chemical properties were studied by FT-IR-ATR and Raman spectroscopy. XPS results indicated that most of the implanted elements showed a Gaussian like distribution in the silicone polymer matrix, but implanted He+, Ne+, and Ar+ could not be detected. Results of FT-IR-ATR showed that ion implantation broke CH3 and Si-O bonds to form new radicals such as SiOH, >C=0, CH2 and SiHx and the effects varied depending on the implanted ion species. The Raman spectroscopy results showed that ion implanted silicone contained both sp3 and sp2 bonded carbon.

Ion Beam Modification of Carbon Materials

2005 ◽  
Vol 107 ◽  
pp. 107-110
Author(s):  
Masaya Iwaki
Keyword(s):  
Electrical Conductivity ◽  
Wear Resistance ◽  
Cell Adhesion ◽  
Ion Implantation ◽  
Electrochemical Properties ◽  
Surface Properties ◽  
Carbon Materials ◽  
Ion Beam ◽  
Ion Beam Modification ◽  
Ion Species

A study has been made of surface properties of carbon materials modified by ion beams. Substrates used were natural diamonds, glass-like carbon plates and polymer sheets. Ion species were chemically-active elements such as C, N and O, inert gas elements such as He, Ne and Ar, and metallic elements such as Cr and Ti. It was found that diamond becomes electrically conductive in ion implanted layers, which are amorphous or graphite-like structures. Electrical conductivity depends on implanted species, doses and target temperatures. It was found that glass-like carbon consisting of graphite and disordered graphite becomes amorphous due to ion beam bombardment. Amorphization causes the wear resistance to improve. The electrochemical properties changes depending on implanted species. The wear resistance and electrochemical properties depended on the target temperature during ion implantation. Ion beam bombardment to polymers has been carried out to control the electrical conductivity, cell adhesion and bio-compatibility. The electrical conductivity of polyimide films increases as the dose increases. The saturated sheet resistivity of implanted layers depends on ion species, dose and dose rate. It was found that the cell adhesion can be controlled by ion beam bombardment. The results were used in the fields of clinical examinations. In summary, ion beam bombardment to carbon materials is useful to control the carbon structures and surface properties depending on ion implantation conditions.

The influence of nanostructure formation on properties for Cr implanted PET

2001 ◽  
Vol 665 ◽  
Author(s):  
Wu Yuguang ◽  
Zhang Tonghe ◽  
Zhang Huixing ◽  
Zhang Xiaoji ◽  
Cui Ping ◽  
...  
Keyword(s):  
Wear Resistance ◽  
Ion Implantation ◽  
Metal Ion ◽  
Ion Beam ◽  
Dose Range ◽  
Surface Hardness ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Ion Beam Modification ◽  
Ion Implanted

ABSTRACTPolyethylene terephthalate (PET) has been modified by Cr ion implantation with a dose range from 1×1016to 2×1017ions /cm2 using a metal vapor vacuum arc MEVVA source. The surface morphology was observed by atomic force microscopy (AFM). The Cr atom precipitation was found. The changes of the structure and composition have been observed with transmission electron microscope (TEM). The TEM photos revealed the presence of Cr nano-meter particles on the implanted PET. It is believed that the change would cause the improvement of the conductive properties and wear resistance. The electrical properties of PET have been improved after metal ion implantation. The resistivity of Cr ion implanted PET decreased obviously with an increase of ion dose. When the metal ion dose with 2×1017cm−2 was implanted into PET, the resistivity of PET could be less than 0.1 Ωm. But when Si or C ions with same dose are implanted PET, the resistivity of PET would be up to several Ωm. The result show that the resistivity of Cr ion implanted sample is obviously lower than that of Si- and C-implanted one. After Cr implantation, the surface hardness and modulus could be increased. The property of the implanted PET has modified greatly. The hardness and modulus of Cr implanted PET with dose of 2×1017/cm2 is 9.5 and 3.1 times greater than that of pristine PET. So we can see that wear resistance improved greatly. The Cr ion beam modification mechanism of PET will be discussed.

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Ultra-Pure Processing: a Key Challenge for Ion Implantation Processing for Fabrication of ULSI Devices

1989 ◽  
Vol 147 ◽  
Author(s):  
M. I. Current ◽  
L. A. Larson
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Wafer Surface ◽  
Physical Mechanisms ◽  
Foreign Materials ◽  
Ion Implanted

AbstractA key issue in modern ion implantation processing is the requirement for dramatic improvements in the purity of the incident ion beam and reductions in the deposition of foreign materials onto the wafer surface. These deposited materials include particles as well as sputtered and vapor deposited metals and dopants. Physical mechanisms which effect the elemental purity of atoms arriving at the surface of ion implanted wafers and progress towards achieving implantation purity levels of below 100 ppm of the implanted dose for sputtered metal and dopant films are discussed.

Industrial Applications of Ion Implantation

1983 ◽  
Vol 27 ◽  
Author(s):  
J.K. Hirvoney
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Industrial Applications ◽  
The Other ◽  
High Dose ◽  
Nitrogen Implantation ◽  
Aqueous Corrosion ◽  
Wear Reduction ◽  
Ion Species ◽  
Corrosion And Oxidation

ABSTRACTThe use of ion implantation for non-semiconductor applications has evolved steadily over the last decade. To date, industrial trials of this technology have been mainly directed at the wear reduction of steel and cobalt-cemented tungsten carbide tools by high dose nitrogen implantation. However, several other surface sensitive properties of metals such as fatigue, aqueous corrosion, and oxidation, have benefitted from either i)direct ion implantation of various ion species, ii)the use of ion beams to “intermix” a deposited thin film on steel or titanium alloy substrates, or iii)the deposition of material in conjunction with simultaneous ion bombardment.This paper will concentrate on applications that have experienced the most industrial trials, mainly high dose nitrogen implantation for reducing wear, but will present the features of the other ion beam based techniques that will make them appear particularly promising for future commercial utilization.

Effects of electronic and recoil processes in polymers during ion implantation

1994 ◽  
Vol 9 (4) ◽  
pp. 1043-1050 ◽  
Author(s):  
E. H. Lee ◽  
G. R. Rao ◽  
M. B. Lewis ◽  
L. K. Mansur
Keyword(s):  
Energy Transfer ◽  
Ion Implantation ◽  
Cross Sections ◽  
Linear Energy Transfer ◽  
Chemical Properties ◽  
Polymeric Materials ◽  
Track Length ◽  
Property Changes ◽  
Physical And Chemical ◽  
Ion Species

It has been shown that ion implantation produces remarkable improvements in surface-sensitive mechanical properties, as well as other physical and chemical properties in polymers. To understand mechanisms underlying such property changes, various polymeric materials were subjected to bombardment by energetic ions in the range of 200 keV to 2 MeV. The magnitude of property changes is strongly dependent upon ion species, energy, and dose. Analysis indicated that hardness and electrical conductivity increased by employing ion species with larger electronic cross sections and with increasing ion energy and dose. The results showed that electronic stopping or linear energy transfer (LET, energy deposited per unit track length per ion) for ionization was the most important factor for the enhancement of hardness, while nuclear stopping or linear energy transfer for displacement generally appeared to reduce hardness.

Ion Beam Modification of Ceramics

1983 ◽  
Vol 27 ◽  
Author(s):  
C. J. Mchargue ◽  
C. W. White ◽  
B. R. Appleton ◽  
G. C. Farlow ◽  
J. M. Williams
Keyword(s):  
Ion Beam ◽  
Structure And Properties ◽  
Charge Balance ◽  
Implantation Energy ◽  
Ion Beam Modification ◽  
Implantation Temperature ◽  
Local Charge ◽  
Ion Damage ◽  
Ion Species ◽  
Bonding Characteristics

ABSTRACTAlterations to the structure and properties of ceramics are complex due to the range of bonding types encountered and the necessity for maintaining local charge balance. Ion damage can occur as a result of ionizing effects as well as displacement collisions. Ion species, implantation temperature, implantation energy, and the specific bonding characteristics of the host are important parameters in determining the structure and properties of implanted ceramics. Some of these effects will be illustrated for Al2O3 implanted with chromium or zirconium and silicon carbide implanted with chromium.

Conducting Polymer Films by Ion Implantation

1989 ◽  
Vol 154 ◽  
Author(s):  
P.H. Lu ◽  
R.A. Moody ◽  
I.H. Loh
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Structural Changes ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Electrically Conductive ◽  
Energy Beam ◽  
Ion Beam Modification ◽  
Spin Resonance

AbstractInsulating polymeric sheets were made electrically conductive by ion implantation. The effects of implantation parameters, such as ion species, dose, energy, beam current density, and substrate temperature, on the resultant sheet resistivities were investigated. Surface structural changes of implanted polymers were evaluated by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectroscopy (RBS), and Fourier transform infared spectroscopy (FTIR). Electron spin resonance (ESR) and temperature dependent resistivity measurements were performed to explore the conduction mechanisms of implanted polymers. The results indicate that ion beam modification of polymers proceeds via a similar mechanism as high temperature pyrolysis. The resultant carbon-enriched materials which can be described by the conducting grain model.

scholarly journals Multi-energy ion implantation from high-intensity laser

Nukleonika ◽  
2016 ◽  
Vol 61 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Mariapompea Cutroneo ◽  
Lorenzo Torrisi ◽  
Jiri Ullschmied ◽  
Roman Dudzak
Keyword(s):  
Ion Implantation ◽  
Charge State ◽  
Ion Beam ◽  
Chemical Properties ◽  
Target Surface ◽  
Forward Direction ◽  
High Energy ◽  
Elastic Recoil ◽  
Wetting Ability ◽  
Detection Analysis

Abstract The laser-matter interaction using nominal laser intensity above 1015 W/cm2 generates in vacuum non-equilibrium plasmas accelerating ions at energies from tens keV up to hundreds MeV. From thin targets, using the TNSA regime, plasma is generated in the forward direction accelerating ions above 1 MeV per charge state and inducing high-ionization states. Generally, the ion energies follow a Boltzmann-like distribution characterized by a cutoff at high energy and by a Coulomb-shift towards high energy increasing the ion charge state. The accelerated ions are emitted with the high directivity, depending on the ion charge state and ion mass, along the normal to the target surface. The ion fluencies depend on the ablated mass by laser, indeed it is low for thin targets. Ions accelerated from plasma can be implanted on different substrates such as Si crystals, glassy-carbon and polymers at different fluences. The ion dose increment of implanted substrates is obtainable with repetitive laser shots and with repetitive plasma emissions. Ion beam analytical methods (IBA), such as Rutherford backscattering spectroscopy (RBS), elastic recoil detection analysis (ERDA) and proton-induced X-ray emission (PIXE) can be employed to analyse the implanted species in the substrates. Such analyses represent ‘off-line’ methods to extrapolate and to character the plasma ion stream emission as well as to investigate the chemical and physical modifications of the implanted surface. The multi-energy and species ion implantation from plasma, at high fluency, changes the physical and chemical properties of the implanted substrates, in fact, many parameters, such as morphology, hardness, optical and mechanical properties, wetting ability and nanostructure generation may be modified through the thermal-assisted implantation by multi-energy ions from laser-generated plasma.

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