High Temperature Stability of Oxycarbide Glasses

1992 ◽  
Vol 271 ◽  
Author(s):  
Hanxi Zhang ◽  
Carlo G. Pantano
Keyword(s):  
High Temperature ◽  
Hydrogen Concentration ◽  
Network Structure ◽  
Sol Gel ◽  
Temperature Stability ◽  
Silicon Oxycarbide ◽  
High Temperature Stability ◽  
Sol Gel Process ◽  
Silicon Oxycarbide Glasses ◽  
The Stability

ABSTRACTThe stability of silicon oxycarbide glasses has been studied at temperatures up to 1500°C. The silicon oxycarbide glasses were synthesized using a sol/gel process. The pyrolysis treatment in argon influenced the structure and composition of the synthesized glasses, and in turn, their high temperature stability in oxidizing atmosphere. The oxycarbide glasses pyrolyzed at > 1000°C had lower hydrogen concentration and a more polymerized network structure, and thereby were more resistant to oxidation and crystallization at higher temperatures.

Experimental Study of Typical Graded Asphalt Mixture about Dynamic Stability at High Temperature

2016 ◽  
Vol 858 ◽  
pp. 300-304
Author(s):  
Zhen Fu Chen ◽  
Dan Wu ◽  
Qiu Wang Tao ◽  
Yuan Chu Gan
Keyword(s):  
Experimental Data ◽  
Experimental Study ◽  
High Temperature ◽  
Asphalt Mixture ◽  
Temperature Stability ◽  
Specimen Thickness ◽  
High Temperature Stability ◽  
Change Trend ◽  
Comparison And Analysis ◽  
The Stability

The high temperature stability of AC-16, AC-13, AC-20 under specimen thickness of 5cm and 6cm is studied through indoor asphalt mixture high rutting test, Through comparison and analysis about experimental data, it is found that the stability of AC-16, AC-13, AC-20 asphalt mixture at high- temperature decreases in turn. It is shown that thickness changes did not affect the change trend of the high temperature stability under gradation change, and the stability of AC-16 at high-temperature is the best, the AC-13 is second and the AC-20 is less.

Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Fengyan Zhang ◽  
Sheng Teng Hsu ◽  
Jer-shen Maa ◽  
Yoshi Ono ◽  
Ying Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Gate Oxide ◽  
Ferroelectric Material ◽  
High Temperature Stability ◽  
Material Deposition ◽  
Long Time ◽  
The Stability ◽  
Thin Gate Oxide

AbstractIr-Ta-O composite bottom electrode has extraordinary high temperature stability. It can maintain good conductivity and integrity even after 5min annealing at 1000 °C in oxygen ambient. The thermal stability of Ir-Ta-O on different substrates has been studied. It shows that Ir-Ta-O is also very stable on Si and SiO2 substrates. No hillock formation and peelings of the bottom electrode were observed after high temperature and long time annealing in O2 ambient. SEM, TEM, XRD, and AES have been used to characterize the Ir-Ta-O film and the interfaces between Ir-Ta-O bottom electrode and Si or SiO2 substrate. The composition and conductivity changes of the electrode during oxygen ambient annealing and the interdiffusion issue will be discussed. Furthermore, Ir-Ta-O/SiO2/Si capacitor with 30Å gate oxide was fabricated and the C-V and I-V characteristics were measured to confirm the stability of Ir-Ta-O on thin gate oxide.

Sol-gel coated enamel for steel: 250 days of continuous high-temperature stability

2017 ◽  
Vol 43 (3) ◽  
pp. 2974-2980 ◽  
Author(s):  
Gundars Mezinskis ◽  
Ilona Pavlovska ◽  
Kaspars Malnieks ◽  
Laimons Bidermanis ◽  
Andris Cimmers ◽  
...  
Keyword(s):  
High Temperature ◽  
Sol Gel ◽  
Temperature Stability ◽  
High Temperature Stability

Stability of Nanometer-Thick Layers in Hard Coatings

MRS Bulletin ◽  
2003 ◽  
Vol 28 (3) ◽  
pp. 169-172 ◽  
Author(s):  
Scott A. Barnett ◽  
Anita Madan ◽  
Ilwon Kim ◽  
Keith Martin
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Temperature Stability ◽  
Hexagonal Wurtzite Structure ◽  
Thin Layers ◽  
Hard Coatings ◽  
High Temperature Stability ◽  
The Stability ◽  
Hardness Values ◽  
Thick Layers

AbstractThis article reviews two topics related to the stability of hard coatings composed of nanometer-thick layers: epitaxial stabilization and high-temperature stability. Early work on nanolayered hard coatings demonstrated large hardness increases as compared with monolithic coatings, but it was subsequently found that the layers interdiffused at elevated temperatures. More recently, it has been shown that nanolayers exhibit good stability at elevated temperatures if the layer materials are thermodynamically stable with respect to each other and are able to form low-energy coherent interfaces. This article discusses metal/nitride, nitride/nitride, and nitride/boride nanolayers that exhibit good high-temperature stability and hardness values that are maintained (or even increase) after high-temperature annealing. Epitaxial stabilization of nonequilibrium structuresin thin layers is a well-known phenomenon that has been applied to hard nitride materials. In particular, AlN, which crystallizes in the hexagonal wurtzite structure in bulk form, was stabilized in the rock-salt cubic structure in nitride/nitride nanolayers (e.g., AlN/TiN). These results and the current understanding of epitaxial stabilization in hard nanolayers are discussed.

Synthesis and Characterization of Silicon Oxycarbide Derived Nanocomposites Obtained through Ceramic Processing of TEOS/PDMS Preceramic Materials

2011 ◽  
Vol 14 ◽  
pp. 27-38 ◽  
Author(s):  
J.L. Oteo ◽  
M. Alejandra Mazo ◽  
Cristina Palencia ◽  
F. Rubio ◽  
Juan Rubio
Keyword(s):  
Silicon Carbide ◽  
Sol Gel ◽  
Silica Matrix ◽  
Silicon Oxycarbide ◽  
Glassy Matrix ◽  
Ceramic Processing ◽  
Carbon Phase ◽  
Graphite Phase ◽  
Sol Gel Process ◽  
Silicon Oxycarbide Glasses

Bulk silicon oxycarbide derived ceramic nanocomposites have been prepared by the application of the conventional ceramic processing to preceramic materials. Tetraethylortosilicate/ polydimethylsiloxane preceramic materials obtained by sol-gel process were thermally treated and attrition milled to 4 micrometers. Subsequently, the preceramic powders were pyrolized at 1100 °C to obtain silicon oxycarbide powders that were pressed and sintered at 1550 °C up to 16 hours. Silicon oxycarbide glasses obtained at 1100 °C from pyrolysis of preceramic materials consist of a Si-O-C network and a carbon like graphite phase well dispersed. At annealing temperatures higher than 1100°C silicon oxycarbide glasses undergo a rearrangement which involves a phase separation to silica and silicon carbide and a segregation of carbon like graphite phase. At these temperatures the material can be considered as a glassy matrix nanocomposite. At temperatures higher than 1500 °C the carbothermal reduction occurs with the consumption of both silica and free carbon phase. However, the nanocomposite structure is maintained but with different constituents. The silicon oxycarbide glasses obtained at 1100 °C are amorphous. However, as a result of all involving processes taken place during the ceramic process, the nanocomposites formed at 1550 °C comprise a silica matrix and nanodomains of carbon like graphite and silicon carbide both of them displaying an incipient crystallization. Structure and crystalline size evolution, from preceramic materials to silicon oxycarbide derived nanocomposites, have been determined by FT-IR and Raman spectroscopies, XRD and 29Si-MASNMR.

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

1992 ◽  
Vol 280 ◽  
Author(s):  
S. R. Stiffler ◽  
C. L. Stanis ◽  
M. S. Goorsky ◽  
K. K. Chan
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Misfit Dislocation ◽  
Stability Criterion ◽  
Temperature Stability ◽  
Dislocation Nucleation ◽  
Misfit Dislocations ◽  
High Temperature Stability ◽  
Nucleation Barrier ◽  
The Stability

ABSTRACT:: High temperature (950°C) annealing is used to stimulate relaxation in UHV/CVD SiGe thin films. It is found that the films are stable to thicknesses which exceed the stability criterion of Matthews and Blakeslee [1] by a small amount. In unstable films, the misfit dislocation density increases with annealing time, reaching a maximum value. For films which exceed the empirical stability criterion by a relatively small amount, the misfit dislocations relax the film to a strain given by the film thickness and the empirical stability criterion. However, large remnant strains are observed when the relaxation process introduces relatively high dislocation densities (≳5 misfits/micron). Associated with large remnant strains are a marked propensity for dislocation banding and looping deep into the substrate with extended annealing. These results are discussed with respect to the magnitude of the misfit dislocation nucleation barrier and the energy associated with interactions among misfit dislocations.

Sign in / Sign up

Export Citation Format

Share Document