The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

1992 ◽  
Vol 280 ◽  
Author(s):  
S. R. Stiffler ◽  
C. L. Stanis ◽  
M. S. Goorsky ◽  
K. K. Chan
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Misfit Dislocation ◽  
Stability Criterion ◽  
Temperature Stability ◽  
Dislocation Nucleation ◽  
Misfit Dislocations ◽  
High Temperature Stability ◽  
Nucleation Barrier ◽  
The Stability

ABSTRACT:: High temperature (950°C) annealing is used to stimulate relaxation in UHV/CVD SiGe thin films. It is found that the films are stable to thicknesses which exceed the stability criterion of Matthews and Blakeslee [1] by a small amount. In unstable films, the misfit dislocation density increases with annealing time, reaching a maximum value. For films which exceed the empirical stability criterion by a relatively small amount, the misfit dislocations relax the film to a strain given by the film thickness and the empirical stability criterion. However, large remnant strains are observed when the relaxation process introduces relatively high dislocation densities (≳5 misfits/micron). Associated with large remnant strains are a marked propensity for dislocation banding and looping deep into the substrate with extended annealing. These results are discussed with respect to the magnitude of the misfit dislocation nucleation barrier and the energy associated with interactions among misfit dislocations.

Experimental Study of Typical Graded Asphalt Mixture about Dynamic Stability at High Temperature

2016 ◽  
Vol 858 ◽  
pp. 300-304
Author(s):  
Zhen Fu Chen ◽  
Dan Wu ◽  
Qiu Wang Tao ◽  
Yuan Chu Gan
Keyword(s):  
Experimental Data ◽  
Experimental Study ◽  
High Temperature ◽  
Asphalt Mixture ◽  
Temperature Stability ◽  
Specimen Thickness ◽  
High Temperature Stability ◽  
Change Trend ◽  
Comparison And Analysis ◽  
The Stability

The high temperature stability of AC-16, AC-13, AC-20 under specimen thickness of 5cm and 6cm is studied through indoor asphalt mixture high rutting test, Through comparison and analysis about experimental data, it is found that the stability of AC-16, AC-13, AC-20 asphalt mixture at high- temperature decreases in turn. It is shown that thickness changes did not affect the change trend of the high temperature stability under gradation change, and the stability of AC-16 at high-temperature is the best, the AC-13 is second and the AC-20 is less.

Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Fengyan Zhang ◽  
Sheng Teng Hsu ◽  
Jer-shen Maa ◽  
Yoshi Ono ◽  
Ying Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Bottom Electrode ◽  
Temperature Stability ◽  
Gate Oxide ◽  
Ferroelectric Material ◽  
High Temperature Stability ◽  
Material Deposition ◽  
Long Time ◽  
The Stability ◽  
Thin Gate Oxide

AbstractIr-Ta-O composite bottom electrode has extraordinary high temperature stability. It can maintain good conductivity and integrity even after 5min annealing at 1000 °C in oxygen ambient. The thermal stability of Ir-Ta-O on different substrates has been studied. It shows that Ir-Ta-O is also very stable on Si and SiO2 substrates. No hillock formation and peelings of the bottom electrode were observed after high temperature and long time annealing in O2 ambient. SEM, TEM, XRD, and AES have been used to characterize the Ir-Ta-O film and the interfaces between Ir-Ta-O bottom electrode and Si or SiO2 substrate. The composition and conductivity changes of the electrode during oxygen ambient annealing and the interdiffusion issue will be discussed. Furthermore, Ir-Ta-O/SiO2/Si capacitor with 30Å gate oxide was fabricated and the C-V and I-V characteristics were measured to confirm the stability of Ir-Ta-O on thin gate oxide.

Stability of Nanometer-Thick Layers in Hard Coatings

MRS Bulletin ◽  
2003 ◽  
Vol 28 (3) ◽  
pp. 169-172 ◽  
Author(s):  
Scott A. Barnett ◽  
Anita Madan ◽  
Ilwon Kim ◽  
Keith Martin
Keyword(s):  
High Temperature ◽  
Elevated Temperatures ◽  
Temperature Stability ◽  
Hexagonal Wurtzite Structure ◽  
Thin Layers ◽  
Hard Coatings ◽  
High Temperature Stability ◽  
The Stability ◽  
Hardness Values ◽  
Thick Layers

AbstractThis article reviews two topics related to the stability of hard coatings composed of nanometer-thick layers: epitaxial stabilization and high-temperature stability. Early work on nanolayered hard coatings demonstrated large hardness increases as compared with monolithic coatings, but it was subsequently found that the layers interdiffused at elevated temperatures. More recently, it has been shown that nanolayers exhibit good stability at elevated temperatures if the layer materials are thermodynamically stable with respect to each other and are able to form low-energy coherent interfaces. This article discusses metal/nitride, nitride/nitride, and nitride/boride nanolayers that exhibit good high-temperature stability and hardness values that are maintained (or even increase) after high-temperature annealing. Epitaxial stabilization of nonequilibrium structuresin thin layers is a well-known phenomenon that has been applied to hard nitride materials. In particular, AlN, which crystallizes in the hexagonal wurtzite structure in bulk form, was stabilized in the rock-salt cubic structure in nitride/nitride nanolayers (e.g., AlN/TiN). These results and the current understanding of epitaxial stabilization in hard nanolayers are discussed.

scholarly journals High-temperature stability of thermoelectric Ca3Co4O9 thin films

2015 ◽  
Vol 106 (14) ◽  
pp. 143903 ◽  
Author(s):  
P. Brinks ◽  
N. Van Nong ◽  
N. Pryds ◽  
G. Rijnders ◽  
M. Huijben
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Temperature Stability ◽  
High Temperature Stability

High temperature stability of indium tin oxide thin films

2002 ◽  
Vol 406 (1-2) ◽  
pp. 286-293 ◽  
Author(s):  
Otto J. Gregory ◽  
Qing Luo ◽  
Everett E. Crisman
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Oxide Thin Films

Ion Implantation and Misfit Dislocation Formation in P/P+Silicon

1999 ◽  
Vol 594 ◽  
Author(s):  
Petra Feichtinger ◽  
Hiroaki Fukuto ◽  
Rajinder Sandhu ◽  
Benjamin Poust ◽  
Mark S. Goorsky
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Ion Implantation ◽  
Misfit Dislocation ◽  
Low Dose ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Epitaxial Thin Films ◽  
Boron Doped ◽  
Temperature Rapid Thermal Annealing

AbstractWe determined that self implantation of pseudomorphically strained silicon epitaxial layers greatly attenuates strain relaxation. We employed highly boron doped 150 mm diameter silicon with a nominally un-doped, 2.5 μm thick epitaxial layer (p/p+). The compressively strained layer (mismatch ≈ 1.5 × 10−4) showed inhomogeneous relaxation after epitaxial growth, with misfits forming only near the wafer periphery. High temperature rapid thermal annealing was employed after ion implantation to study misfit dislocation nucleation and glide. Our results suggest that low dose ion implantation has a potential to reduce misfit dislocation propagation and nucleation in epitaxial thin films.

scholarly journals High Temperature Behavior of RuAl Thin Films on Piezoelectric CTGS and LGS Substrates

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1605 ◽  
Author(s):  
Marietta Seifert
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
High Temperature ◽  
Cross Sections ◽  
Barrier Layer ◽  
High Vacuum ◽  
Temperature Stability ◽  
High Temperature Stability ◽  
Si Substrates ◽  
20 Nm

This paper reports on a significant further improvement of the high temperature stability of RuAl thin films (110 nm) on the piezoelectric Ca 3 TaGa 3 Si 2 O 14 (CTGS) and La 3 Ga 5 SiO 14 (LGS) substrates. RuAl thin films with AlN or SiO 2 cover layers and barriers to the substrate (each 20 nm), as well as a combination of both were prepared on thermally oxidized Si substrates, which serve as a reference for fundamental studies, and the piezoelectric CTGS, as well as LGS substrates. In some films, additional Al layers were added. To study their high temperature stability, the samples were annealed in air and in high vacuum up to 900 °C, and subsequently their cross-sections, phase formation, film chemistry, and electrical resistivity were analyzed. It was shown that on thermally oxidized Si substrates, all films were stable after annealing in air up to 800 °C and in high vacuum up to 900 °C. The high temperature stability of RuAl thin films on CTGS substrates was improved up to 900 °C in high vacuum by the application of a combined AlN/SiO 2 barrier layer and up to 800 °C in air using a SiO 2 barrier. On LGS, the films were only stable up to 600 °C in air; however, a single SiO 2 barrier layer was sufficient to prevent oxidation during annealing at 900 °C in high vacuum.

Research of Asphalt Mixtures High Temperature Stability

2013 ◽  
Vol 405-408 ◽  
pp. 1871-1874
Author(s):  
Gen Chuan Luo
Keyword(s):  
High Temperature ◽  
Asphalt Pavement ◽  
Asphalt Mixture ◽  
Influence Factors ◽  
Temperature Stability ◽  
Asphalt Mixtures ◽  
High Temperature Stability ◽  
Air Voids ◽  
Asphalt Content ◽  
The Stability

Rutting is one of the most hazardous damage form of asphalt pavement.But,owing to itself inherent in the viscoelastic characteristics of asphalt mixture,the diversity of factors influencing the high temperature of asphalt pavement anti-rutting performance and the complexity of rut formation,this three reasons make ruts become a worldwide problem.Starting from the mixture.This article analyzed the influence factors of the rutting resistance of asphalt mixture at high temperature.For asphalt mixture, through the experimental data, the research status at home and abroad, from the type of asphalt, asphalt content, grading of aggregates and air voids four aspects analysis and study the influence factors of the stability of asphalt mixture at high temperature.

High Temperature Stability of Oxycarbide Glasses

1992 ◽  
Vol 271 ◽  
Author(s):  
Hanxi Zhang ◽  
Carlo G. Pantano
Keyword(s):  
High Temperature ◽  
Hydrogen Concentration ◽  
Network Structure ◽  
Sol Gel ◽  
Temperature Stability ◽  
Silicon Oxycarbide ◽  
High Temperature Stability ◽  
Sol Gel Process ◽  
Silicon Oxycarbide Glasses ◽  
The Stability

ABSTRACTThe stability of silicon oxycarbide glasses has been studied at temperatures up to 1500°C. The silicon oxycarbide glasses were synthesized using a sol/gel process. The pyrolysis treatment in argon influenced the structure and composition of the synthesized glasses, and in turn, their high temperature stability in oxidizing atmosphere. The oxycarbide glasses pyrolyzed at > 1000°C had lower hydrogen concentration and a more polymerized network structure, and thereby were more resistant to oxidation and crystallization at higher temperatures.

Sign in / Sign up

Export Citation Format

Share Document