Novel Materials Synthesis Using an Intense Pulsed Ion Beam

1992 ◽  
Vol 279 ◽  
Author(s):  
D. C. Gautier ◽  
R. E. Muenchausen ◽  
D. J. Rej ◽  
B. F. Roberts ◽  
G. Johnston ◽  
...  
Keyword(s):  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Single Shot ◽  
Materials Synthesis ◽  
Large Area ◽  
Beam Source ◽  
Ion Beam Deposition ◽  
Ceramic Targets ◽  
Beam Deposition

ABSTRACTInitial experiments on the evaporation from metallic and ceramic targets using a pulsed light ion beam source is reported. The source is an intense ion beam produced by a 1.2 MV, 300 kJ Anaconda generator which has been fitted with an extraction diode.Beam fluences of 10–20 J/cm2 give a deposition rate of about 30–50 nm per shot, for both brass and YBa2Cu3O7-x (1–2–3) targets. This is about 1000 times greater than comparable rates from pulsed laser deposition (PLD). Single-shot ablated 1–2–3 films, deposited on Si, were analyzed using RBS; the measured stoichiometry was close to 1–2–3 in favorable cases, but shot-to-shot reproducibili ty was poor.Approximately 1% of the available ion beam energy was utilized for these initial experiments. The potential for producing large area coatings from multi-cation targets and nanophase powders using pulsed ion beam deposition will be discussed.

Structure, Optical and Electrical Properties of Pulsed Laser Deposited and Ion Beam Deposited CNx Films

1997 ◽  
Vol 498 ◽  
Author(s):  
K. F. Chan ◽  
X.-A. Zhao ◽  
C. W. Ong
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Film Structure ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Ion Beam Deposition ◽  
Valence Bands ◽  
Beam Deposition

ABSTRACTCNx films were deposited using pulsed laser deposition (PLD) and ion beam deposition (IBD). The PLD films deposited at substrate temperature Ts = 25°C and high N2 partial pressure have the highest N content (fN) and polymerlike structure, accompanied by large band gap (Eg) and low electrical conductivity (σroom). The rise in Ts lowers fN and induces graphitization of the film structure, so Eg reduces and σroom increases. IBD (with and without N2+ assist) films are graphitic. Higher Ts further enhances the graphitization of the film structure, such that the conduction and valence bands overlap, and σroom approaches to that of graphite. No evidence was found to show successful formation of the hypothetical β-C3N4 phase in the films.

On- and Off-AXIS Large-Area Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
James A. Greer ◽  
M. D. Tabat
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Industrial Process ◽  
Industrial Applications ◽  
Laser Deposition ◽  
Ion Beam Sputtering ◽  
Large Area ◽  
Power Sources

AbstractOver the past few years Pulsed Laser Deposition (PLD) has become a popular technique for the deposition of a wide variety of thin films, and PLD systems are currently found in numerous industrial, government, university, and military laboratories. At present, it is estimated that well over 200 different materials have been deposited by PLD and the list keeps growing. However, even with all the interest in laser deposition the technique has not yet emerged as an industrial process. At the moment, industry still prefers standard thin film growth techniques such as magnetron and ion beam sputtering, chemical vapor deposition, and electron beam evaporation for production applications. These processes have been in use for decades and have demonstrated the ability to deposit films of most materials over large areas with excellent uniformity at reasonable cost and deposition rates. Furthermore, an entire infrastructure has been built up to support these processes including standardization of deposition rate monitors, power sources, target and crucible sizes, etc. On the other hand, laser-deposition is still an emerging technology, and relatively little infrastructure exists to adequately support either research or industrial applications. Since there are several materials which are difficult if not impossible to grow in thin-film form by more conventional techniques, it is expected that as pulsed laser-deposition matures this unique process will take its rightful place on the manufacturing line.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

Ion beam deposition of alumina for recording head applications

1995 ◽  
Vol 31 (6) ◽  
pp. 2694-2696 ◽  
Author(s):  
M. Tan ◽  
S.-I. Tan ◽  
Yong Shen
Keyword(s):  
Ion Beam ◽  
Recording Head ◽  
Ion Beam Deposition ◽  
Beam Deposition

Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition

2004 ◽  
Vol 85 (9) ◽  
pp. 1595-1597 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Ion Beam Deposition ◽  
Si Nanocrystals ◽  
Selective Formation ◽  
Beam Deposition

Stress relaxation and optical characterization of TiO2 and SiO2 films grown by dual ion beam deposition

2008 ◽  
Vol 516 (23) ◽  
pp. 8604-8608 ◽  
Author(s):  
C. Bundesmann ◽  
I.-M. Eichentopf ◽  
S. Mändl ◽  
H. Neumann
Keyword(s):  
Stress Relaxation ◽  
Ion Beam ◽  
Optical Characterization ◽  
Sio2 Films ◽  
Ion Beam Deposition ◽  
Beam Deposition

Effect of bias voltage on growth property of Cr-DLC film prepared by linear ion beam deposition technique

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 231-235 ◽  
Author(s):  
Wei Dai ◽  
He Zheng ◽  
Guosong Wu ◽  
Aiying Wang
Keyword(s):  
Bias Voltage ◽  
Ion Beam ◽  
Deposition Technique ◽  
Growth Property ◽  
Dlc Film ◽  
Ion Beam Deposition ◽  
Beam Deposition

Multilayer growth by low energy ion beam deposition

1999 ◽  
Vol 198-199 ◽  
pp. 731-733 ◽  
Author(s):  
D.E Joyce ◽  
N.D Telling ◽  
J.A Van den Berg ◽  
D.G Lord ◽  
P.J Grundy
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Grain size of nanocrystalline YSZ buffer layers fabricated by ion beam deposition

2011 ◽  
Vol 471 (21-22) ◽  
pp. 770-773 ◽  
Author(s):  
F. Feng ◽  
K. Shi ◽  
Z. Wang ◽  
B.-J. Yan ◽  
Z.-J. Zhao ◽  
...  
Keyword(s):  
Grain Size ◽  
Ion Beam ◽  
Buffer Layers ◽  
Ion Beam Deposition ◽  
Beam Deposition
Sign in / Sign up

Export Citation Format

Share Document