Low Temperature Selective Area Chemical Vapor Deposition of Gold Films: Growth and Characterization

1992 ◽  
Vol 282 ◽  
Author(s):  
Paul F. Seidler ◽  
Steven P. Kowalczyk ◽  
Mark M. Banaszak Holl ◽  
John J. Yurkas ◽  
Maurice H. Norcott ◽  
...  

ABSTRACTSubstrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.

ACS Nano ◽  
2015 ◽  
Vol 9 (1) ◽  
pp. 164-171 ◽  
Author(s):  
Dacheng Wei ◽  
Lan Peng ◽  
Menglin Li ◽  
Hongying Mao ◽  
Tianchao Niu ◽  
...  

2008 ◽  
Vol 1 ◽  
pp. 034004 ◽  
Author(s):  
Yuichi Yamazaki ◽  
Naoshi Sakuma ◽  
Masayuki Katagiri ◽  
Mariko Suzuki ◽  
Tadashi Sakai ◽  
...  

1993 ◽  
Vol 62 (13) ◽  
pp. 1475-1477 ◽  
Author(s):  
M. M. Banaszak Holl ◽  
P. F. Seidler ◽  
S. P. Kowalczyk ◽  
F. R. McFeely

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