Low Temperature Selective Area Chemical Vapor Deposition of Gold Films: Growth and Characterization
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ABSTRACTSubstrate-selective, low-temperature chemical vapor deposition of high quality gold filmswas obtained with the new precursor ethyl(trimethylphosphine)gold(I) in an ultrahigh vacuum reactor designed to handle wafers up to 3 inches in diameter. Growth behavior at temperatures as low as room temperature as well as substrate pre-cleaning procedures are presented. Activation energies of 35.1 ± 0.4 kcal mol−1 and 18.3 ± 0.7 kcal mol−1 were found for growth of gold films on gold and copper substrates, respectively.
2005 ◽
2005 ◽
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Keyword(s):
2002 ◽
Vol 20
(1)
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pp. 265-269
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