Strained Quantum Dots in Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Xue-Shu Zhao ◽  
Peter D. Persans ◽  
John Schroeder ◽  
Yeun-Jung Wu
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Quantum Dot ◽  
Raman Scattering ◽  
Electronic Transition ◽  
Silicon Nanoparticle ◽  
Localized State ◽  
Strong Luminescence ◽  
Absorption Studies ◽  
Jahn Teller

ABSTRACTOn the basis of Raman, photoluminescence, and absorption studies of porous and nanoparticle silicon we propose that the strong luminescence in porous silicon results from strained silicon quantum dots. A silicon nanoparticle is a special Jahn-Teller system induced by extended electron states rather than localized state. Thus Raman scattering and photoluminescence in porous silicon are multi-phonon assisted free electronic transition processes, all observed anomalous properties of porous silicon can be clearly explained by using this strained quantum dot model.

CdZnSe/Zn(Be)Se Quantum Dot Structures: Size, Chemical Composition and Phonons

2003 ◽  
Vol 799 ◽  
Author(s):  
Y. Gu ◽  
Igor L. Kuskovsky ◽  
J. Fung ◽  
R. Robinson ◽  
I. P. Herman ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Composition ◽  
Quantum Dot ◽  
Raman Scattering ◽  
Size Effect ◽  
Quantum Size Effect ◽  
Optically Active ◽  
Photoluminescence Excitation ◽  
Quantum Size ◽  
Polarized Raman

ABSTRACTThe size and chemical composition of optically active CdZnSe/ZnSe and CdZnSe/Zn0.97Be0.03Se quantum dots (QDs) are determined using photoluminescence, photoluminescence excitation and polarized Raman scattering spectroscopies. We show that the addition of Be into the barrier enhances the Cd composition and the quantum size effect of optically active QDs. Additionally, surface phonons from QDs are observed in CdZnSe/ZnBeSe nanostructures.

Symmetry-forbidden Raman scattering from porous silicon quantum dots

2002 ◽  
Vol 65 (3) ◽  
Author(s):  
Md. N. Islam ◽  
R. N. Panda ◽  
A. Pradhan ◽  
Satyendra Kumar
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Raman Scattering ◽  
Silicon Quantum Dots

Manufacturing and Characterization on aThree-Dimensional Random Resonator of Porous Silicon/TiO2 Nanowires for Continuous Light Pumping Lasing of Perovskite Quantum Dots

NANO ◽  
2020 ◽  
Vol 15 (02) ◽  
pp. 2050016
Author(s):  
Yining Mu ◽  
Tuo Zhang ◽  
Tianqi Chen ◽  
Fanqi Tang ◽  
Jikai Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Quantum Dot ◽  
Quality Factor ◽  
Chemical Stability ◽  
High Performance ◽  
Resonant Cavity ◽  
Continuous Light ◽  
Tio2 Nanowires ◽  
Interference Structure

In recent years, all inorganic bismuth lead-halide perovskite nanocrystals [CsPbX3 (X[Formula: see text][Formula: see text][Formula: see text]Cl, Br, I)] have received extensive attention due to their high performance in fluorescence quantum yield, narrow emission spectrum, and adjustable emission range. However, the disadvantages of high cost and poor stability have greatly limited the development prospects of the material. Here, in order to develop a perovskite quantum dot lasing cavity with high chemical stability, high quality factor and low fabrication cost, we have successfully fabricated a 3D random cavity device based on porous silicon/TiO2 nanowires. A TiO2 nanowire is grown on the porous silicon to form a 3D resonant cavity, and a perovskite quantum dot is spin-coated on the surface of the 3D resonant cavity to form a novel 3D complex film. The novel structure enhances the chemical stability and lasing quality factor of the resonant cavity while the fluorescence generated by the large quantum dots in the spatial interference structure constitutes the feedback loop, which will provide favorable support for the development of information optics.

Photoluminescence, Raman scattering, and infrared absorption studies of porous silicon

1993 ◽  
Vol 62 (15) ◽  
pp. 1812-1814 ◽  
Author(s):  
Y. H. Seo ◽  
H.‐J. Lee ◽  
H. I. Jeon ◽  
D. H. Oh ◽  
K. S. Nahm ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Raman Scattering ◽  
Infrared Absorption ◽  
Absorption Studies

Calculation of exchange energy in quantum dots : application to porous silicon

1993 ◽  
Vol 03 (C5) ◽  
pp. 355-358 ◽  
Author(s):  
G. FISHMAN ◽  
R. ROMESTAIN ◽  
J. C. VIAL
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Exchange Energy

Raman Scattering in Superlattices with Ge Quantum Dots

2015 ◽  
Vol 60 (12) ◽  
pp. 1224-1233
Author(s):  
Yu.A. Romanyuk ◽  
◽  
A.M. Yaremko ◽  
V.M. Dzhagan ◽  
V.O. Yukhymchuk ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Raman Scattering ◽  
Ge Quantum Dots

NiAg-graphene quantum dot-graphene hybrid with high oxidase-like catalytic activity for sensitive colorimetric detection of malathion

2021 ◽  
Author(s):  
Xu Dan ◽  
Ruiyi Li ◽  
Qinsheng Wang ◽  
Yongqiang Yang ◽  
Haiyan Zhu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Catalytic Activity ◽  
Quantum Dot ◽  
Colorimetric Detection ◽  
Graphene Quantum Dots ◽  
Functionalized Graphene ◽  
Graphene Quantum Dot ◽  
Nickel Silver

The paper reports the synthesis of nickel-silver-graphene quantum dot-graphene hybrid. Histidine-functionalized graphene quantum dots (His-GQDs) were bonded to graphene oxide (GO) and then combined with Ni2+ and Ag+ to form...

scholarly journals Effect of Growth Temperature on the Characteristics of CsPbI3-Quantum Dots Doped Perovskite Film

Molecules ◽  
2021 ◽  
Vol 26 (15) ◽  
pp. 4439
Author(s):  
Shui-Yang Lien ◽  
Yu-Hao Chen ◽  
Wen-Ray Chen ◽  
Chuan-Hsi Liu ◽  
Chien-Jung Huang
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Quantum Dots ◽  
Quantum Dot ◽  
Growth Temperature ◽  
Electron Mobility ◽  
Surface Defects ◽  
Different Temperatures ◽  
Pb Doping ◽  
Pristine Film

In this study, adding CsPbI3 quantum dots to organic perovskite methylamine lead triiodide (CH3NH3PbI3) to form a doped perovskite film filmed by different temperatures was found to effectively reduce the formation of unsaturated metal Pb. Doping a small amount of CsPbI3 quantum dots could enhance thermal stability and improve surface defects. The electron mobility of the doped film was 2.5 times higher than the pristine film. This was a major breakthrough for inorganic quantum dot doped organic perovskite thin films.

Carbon quantum dot-sensitized hollow TiO2 spheres for high-performance visible light photocatalysis

2021 ◽  
Author(s):  
Xianfeng Zhang ◽  
Zongqun Li ◽  
Shaowen Xu ◽  
Yaowen Ruan
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Visible Light ◽  
Photocatalytic Degradation ◽  
High Performance ◽  
Carbon Quantum Dots ◽  
Visible Light Photocatalysis ◽  
Carbon Quantum Dot ◽  
Visible Light Photocatalytic

TiO2/CQD composites were synthesized through carbon quantum dots covalently attached to the surface of hollow TiO2 spheres for visible light photocatalytic degradation of organics.

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