Time-Resolved Light-Emission Spectroscopy and Ion Current Measurements from Pulsed-Laser-Evaporated Cadmium Plumes

1992 ◽  
Vol 285 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
Y. Luo ◽  
A. Compaan ◽  
M.A. Tamor

ABSTRACTWe have investigated the pulsed laser evaporation of elemental Cd targets, with the aim of understanding the velocity distributions in the plumes and the changes which occur under moderate electrical bias. We report detailed kinetic energy distributions of the species in the laser evaporated plumes. In these experiments, frequency doubled, Q-switched pulses of a Nd:YAG laser were used at a 10 Hz repetition rate to generate the plumes. The velocity distributions of individual atomic species were determined by time-of-flight (TOF) light emission spectroscopy, while the time resolved ion/atom currents were measured with a collector above the target. We have simultaneously measured the dependence of the time resolved optical and electrical signals on the electrical bias applied between target and collector. We find that the typical kinetic energies in the plume are on the order of 10-200 eV, while the ionized species travel two to three times faster than the neutral particles. These results provide fundamental information about the physics of the pulsed laser evaporation process, and subsequent evolution of the plume.

2006 ◽  
Vol 28 ◽  
pp. 100-104 ◽  
Author(s):  
A D Hadoko ◽  
P S Lee ◽  
P Lee ◽  
S R Mohanty ◽  
R S Rawat

2020 ◽  
Author(s):  
Stefan Andrei Irimiciuc ◽  
Norina Forna ◽  
Andrei Agop ◽  
Maricel Agop ◽  
Stefan Toma ◽  
...  

Understanding the underline fundamental mechanism behind experimental and industrial technologies embodies one of the foundations of the advances and tailoring new materials. With the pulsed laser deposition being one of the key techniques for obtaining complex biocompatible materials with controllable stoichiometry, there is need for experimental and theoretical advancements towards understanding the dynamics of multi component plasmas. Here we investigate the laser ablation process on Cu-Mn-Al and Fe-Mn-Si by means of space-and time-resolved optical emission spectroscopy and fast camera imaging. In a fractal paradigm the space–time homographic transformations were correlated with the global dynamics of the ablation plasmas.


1981 ◽  
Vol 4 ◽  
Author(s):  
R. T. Williams ◽  
M. N. Kabler ◽  
J. P. Long ◽  
J. C. Rife ◽  
T. R. Royt

ABSTRACTSpectra of photoelectrons and thermionic electrons emitted from silicon during pulsed laser irradiation at energy densities encompassing the thresholds for laser annealing and damage are reported. Annealing is accomplished with a 90-nsec pulse of 532-nm light, which may be accompanied by a 266-nm probe pulse. A cylindrical mirror analyzer is used for energy resolution of emitted electrons. Time-resolved reflectivity at 633 nm verifies attainment of the high-reflectivity annealing phase. Spectral widths and total yields imply a modest electron temperature (T < 3000 K) during annealing. The data suggest that the work function of the silicon (111) face may increase about 0.6 eV upon transition to the molten phase.


2001 ◽  
Vol 698 ◽  
Author(s):  
D. Young ◽  
R. C. Y. Auyeung ◽  
A. Piqué ◽  
D. B. Chrisey ◽  
H. Denham ◽  
...  

ABSTRACTMatrix-Assisted Pulsed Laser Evaporation Direct-Write was investigated by ultra high-speed optical microscopy. A layer of viscous fluid was irradiated with 355nm, 30 ns laser pulses in a laser-forward transfer configuration. The fluid response as a function of fluence was studied, and several distinct regimes of behavior were observed: plume, jetting and sub-threshold. However, the transition between plume and jetting regimes was not readily evident in a study of transfer pixel area vs. fluence, which may be explained by material-substrate interactions.


Author(s):  
Peter Ouimet ◽  
Jason Goertz ◽  
Olivier Rinaudo ◽  
Lousinda Long ◽  
Simon Yeung

Abstract This paper describes case histories of 0.13 um bulk CMOS technology analyses using Time Resolved Light Emission (TRLEM). Using this technique, scan chain, timing, and logic failures are shown to be quickly and decisively identified thereby meeting the need for rapid feedback on 1st silicon failures and process excursions.


Sign in / Sign up

Export Citation Format

Share Document