Analysis of 0.13 μm CMOS Technology Using Time Resolved Light Emission

2004 ◽  
Author(s):  
Peter Ouimet ◽  
Jason Goertz ◽  
Olivier Rinaudo ◽  
Lousinda Long ◽  
Simon Yeung
Keyword(s):  
Light Emission ◽  
Cmos Technology ◽  
Case Histories ◽  
Time Resolved ◽  
Scan Chain

Abstract This paper describes case histories of 0.13 um bulk CMOS technology analyses using Time Resolved Light Emission (TRLEM). Using this technique, scan chain, timing, and logic failures are shown to be quickly and decisively identified thereby meeting the need for rapid feedback on 1st silicon failures and process excursions.

Optical Properties and Electronic Structures of Sexithiophene

2010 ◽  
Vol 428-429 ◽  
pp. 475-478 ◽  
Author(s):  
Bao Gai Zhai ◽  
Yuan Ming Huang
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Ultraviolet Light ◽  
Organic Semiconductor ◽  
Electronic Structures ◽  
Light Emission ◽  
Visible Spectroscopy ◽  
Time Resolved ◽  
Pump And Probe ◽  
Green Photoluminescence

The optical properties and electronic structures of an organic semiconductor sexithiophene have been investigated with ultraviolet-visible spectroscopy, cw photospectroscopy and time-resolved photospectroscopy, respectively. Sexithiophene in dilute tetrahydrofuran solutions can absorb photons at 400 nm while it can give off strong green photoluminescence at 550 nm under the excitation of 325 nm ultraviolet light. With the assistance of calculated electronic structures and pump-and-probe characterization, our results indicate that both the optical absorption and the light emission of the sexithiophene are controlled by the p-conjugation of the oligothiophene.

Space and time resolved representation of a vacuum arc light emission

1999 ◽  
Vol 32 (7) ◽  
pp. 785-789
Author(s):  
N Georgescu ◽  
G Sandolache ◽  
V Zoita
Keyword(s):  
Light Emission ◽  
Vacuum Arc ◽  
Time Resolved ◽  
Space And Time

A Time-Resolved, Low-Noise Single-Photon Image Sensor Fabricated in Deep-Submicron CMOS Technology

2012 ◽  
Vol 47 (6) ◽  
pp. 1394-1407 ◽  
Author(s):  
Marek Gersbach ◽  
Yuki Maruyama ◽  
Rahmadi Trimananda ◽  
Matt W. Fishburn ◽  
David Stoppa ◽  
...  
Keyword(s):  
Single Photon ◽  
Cmos Technology ◽  
Image Sensor ◽  
Deep Submicron ◽  
Low Noise ◽  
Time Resolved ◽  
Submicron Cmos

Integrated Optoelectronic Devices on Silicon

2012 ◽  
Vol 1396 ◽  
Author(s):  
Di Liang ◽  
John E. Bowers
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Continuous Wave ◽  
Light Emission ◽  
Extinction Ratio ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Pockels Effect

ABSTRACTSilicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Si-based planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively.

Time-Resolved Light-Emission Spectroscopy and Ion Current Measurements from Pulsed-Laser-Evaporated Cadmium Plumes

1992 ◽  
Vol 285 ◽  
Author(s):  
Y. Rajakarunanayake ◽  
Y. Luo ◽  
A. Compaan ◽  
M.A. Tamor
Keyword(s):  
Emission Spectroscopy ◽  
Light Emission ◽  
Pulsed Laser ◽  
Laser Evaporation ◽  
Energy Distributions ◽  
Subsequent Evolution ◽  
Time Resolved ◽  
Neutral Particles ◽  
Fundamental Information ◽  
Electrical Bias

ABSTRACTWe have investigated the pulsed laser evaporation of elemental Cd targets, with the aim of understanding the velocity distributions in the plumes and the changes which occur under moderate electrical bias. We report detailed kinetic energy distributions of the species in the laser evaporated plumes. In these experiments, frequency doubled, Q-switched pulses of a Nd:YAG laser were used at a 10 Hz repetition rate to generate the plumes. The velocity distributions of individual atomic species were determined by time-of-flight (TOF) light emission spectroscopy, while the time resolved ion/atom currents were measured with a collector above the target. We have simultaneously measured the dependence of the time resolved optical and electrical signals on the electrical bias applied between target and collector. We find that the typical kinetic energies in the plume are on the order of 10-200 eV, while the ionized species travel two to three times faster than the neutral particles. These results provide fundamental information about the physics of the pulsed laser evaporation process, and subsequent evolution of the plume.

Time-resolved STM light emission from an evaporated Au film

2001 ◽  
Vol 169-170 ◽  
pp. 198-201 ◽  
Author(s):  
Y. Uehara ◽  
A. Yagami ◽  
K.J. Ito ◽  
S. Ushioda
Keyword(s):  
Light Emission ◽  
Time Resolved ◽  
Au Film ◽  
Stm Light Emission

The Structural and Optical Properties of Self-assembled InGaN/GaN Quantum Dots Grown by Molecular Beam Epitaxy

2006 ◽  
Vol 955 ◽  
Author(s):  
Tim Michael Smeeton ◽  
Mathieu Sénès ◽  
Katherine L Smith ◽  
Stewart E Hooper ◽  
Jon Heffernan
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emission ◽  
Structural And Optical Properties ◽  
Discrete Energy ◽  
Time Resolved ◽  
Transmission Electron ◽  
Z Contrast

ABSTRACTThe structural and optical properties of InGaN quantum dots grown by plasma-assisted molecular beam epitaxy (MBE) have been characterised using atomic force microscopy, high-resolution transmission electron microscopy (TEM), Z-contrast scanning TEM, micro-photoluminescence (PL), temperature dependent PL and time-resolved PL. The uncapped InGaN nano-islands have densities of ∼1.5 × 1011 cm−2, heights of (1.7 ± 1.0) nm and diameters of (10 ± 4) nm. These parameters are not substantially changed during overgrowth of a GaN cap and the resulting quantum dots have a composition of In0.15Ga0.85N. The observation of narrow luminescence peaks in micro-PL measurements proves light emission from discrete energy states and the optical properties indicate strong confinement of carriers in the quantum dots and an unusually weak impact of piezoelectric field effects.

scholarly journals Single-photon avalanche diode imagers in biophotonics: review and outlook

2019 ◽  
Vol 8 (1) ◽  
Author(s):  
Claudio Bruschini ◽  
Harald Homulle ◽  
Ivan Michel Antolovic ◽  
Samuel Burri ◽  
Edoardo Charbon
Keyword(s):  
Single Photon ◽  
Photon Counting ◽  
Super Resolution ◽  
Cmos Technology ◽  
Time Resolved ◽  
Avalanche Diode ◽  
The Past ◽  
Fast Pace ◽  
On Chip ◽  
Super Resolution Microscopy

Abstract Single-photon avalanche diode (SPAD) arrays are solid-state detectors that offer imaging capabilities at the level of individual photons, with unparalleled photon counting and time-resolved performance. This fascinating technology has progressed at a very fast pace in the past 15 years, since its inception in standard CMOS technology in 2003. A host of architectures have been investigated, ranging from simpler implementations, based solely on off-chip data processing, to progressively “smarter” sensors including on-chip, or even pixel level, time-stamping and processing capabilities. As the technology has matured, a range of biophotonics applications have been explored, including (endoscopic) FLIM, (multibeam multiphoton) FLIM-FRET, SPIM-FCS, super-resolution microscopy, time-resolved Raman spectroscopy, NIROT and PET. We will review some representative sensors and their corresponding applications, including the most relevant challenges faced by chip designers and end-users. Finally, we will provide an outlook on the future of this fascinating technology.

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