Physical Properties of P and B Doped Microcrystalline Si:H Deposited by PECVD

1993 ◽  
Vol 297 ◽  
Author(s):  
A. Rubino ◽  
M.L. Addonizio ◽  
G. Conte ◽  
G. Nobile ◽  
E. Terzini ◽  
...  
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Activation Energy ◽  
Physical Properties ◽  
High Conductivity ◽  
Transport Mechanisms ◽  
Rf Power ◽  
Fraction Increase ◽  
Phosphorus Doped ◽  
Film Characteristics

Boron and phosphorus doped high conductivity microcrystalline thin films were deposited in a PECVD reactor. We report conductivities as high as 3 and 41 S/cm for B and P doped materials respectively on films deposited at 210 °C. The conductivity as well as the microcrystalline fraction increase for the n layer with decreasing RF power, while, for the p material, an increase of power is needed to improve the film characteristics. The conductivity prefactor (σo) as well as the conductivity (σ) itself as a function of the activation energy (Ea) show a slope inversion for both n and p materials at an activation energy or about 40 meV and 80 meV respectively. Different possible transport mechanisms are examined in order to explain the experimental data.

Effects of deposition time and RF power on the film characteristics of magnetron sputtered silicon carbide thin films

2021 ◽  
Author(s):  
O.P. Oladijo ◽  
M.R. Sanjay ◽  
L.L. Collieus ◽  
S. Siengchin ◽  
L. Moloisane ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Deposition Time ◽  
Rf Power ◽  
Film Characteristics

Activation energy study of phosphorus-doped microcrystalline silicon thin films

Optik ◽  
2016 ◽  
Vol 127 (22) ◽  
pp. 10437-10441
Author(s):  
Qingdong Chen ◽  
Junping Wang ◽  
Yuxiang Zhang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Growth and physical properties of in situ phosphorus-doped RTLPCVD polycrystalline silicon thin films

1998 ◽  
Vol 1 (3-4) ◽  
pp. 299-302 ◽  
Author(s):  
S Kallel ◽  
B Semmache ◽  
M Lemiti ◽  
Ch Dubois ◽  
H Jaffrezic ◽  
...  
Keyword(s):  
Thin Films ◽  
Physical Properties ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Phosphorus Doped

Influence of RF power on physical properties of ZnO:ZnF2 thin films by RF magnetron sputtering

2015 ◽  
Vol 83 ◽  
pp. 289-298 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Yen-Hsien Lee ◽  
Tsung-Kuei Kang ◽  
Han-Wen Liu
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Physical Properties ◽  
Rf Magnetron Sputtering ◽  
Rf Power

Niobium pentoxide (Nb2O5) thin films: rf Power and substrate temperature induced changes in physical properties

Optik ◽  
2015 ◽  
Vol 126 (19) ◽  
pp. 1945-1950 ◽  
Author(s):  
N. Usha ◽  
R. Sivakumar ◽  
C. Sanjeeviraja ◽  
M. Arivanandhan
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Physical Properties ◽  
Niobium Pentoxide ◽  
Rf Power ◽  
Induced Changes

Investigation of ultra-thin films of YBa2Cu3O7−δ grown on MgO

1990 ◽  
Vol 48 (4) ◽  
pp. 6-7
Author(s):  
S.K. Streiffer ◽  
C.B. Eom ◽  
J.C. Bravman ◽  
T.H. Geballet
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Process ◽  
Nucleation And Growth ◽  
Multilayer Structures ◽  
Rf Power ◽  
Oxygen Loss ◽  
Transmission Electron ◽  
Single Target ◽  
Mtorr Argon

The study of very thin (<15 nm) YBa2Cu3O7−δ (YBCO) films is necessary both for investigating the nucleation and growth of films of this material and for achieving a better understanding of multilayer structures incorporating such thin YBCO regions. We have used transmission electron microscopy to examine ultra-thin films grown on MgO substrates by single-target, off-axis magnetron sputtering; details of the deposition process have been reported elsewhere. Briefly, polished MgO substrates were attached to a block placed at 90° to the sputtering target and heated to 650 °C. The sputtering was performed in 10 mtorr oxygen and 40 mtorr argon with an rf power of 125 watts. After deposition, the chamber was vented to 500 torr oxygen and allowed to cool to room temperature. Because of YBCO’s susceptibility to environmental degradation and oxygen loss, the technique of Xi, et al. was followed and a protective overlayer of amorphous YBCO was deposited on the just-grown films.

ANACONDA ALLOY 1870

Alloy Digest ◽  
1976 ◽  
Vol 25 (9) ◽  
Keyword(s):  
Corrosion Resistance ◽  
Shear Strength ◽  
Hydrogen Embrittlement ◽  
Physical Properties ◽  
Tensile Properties ◽  
Heat Treating ◽  
High Conductivity ◽  
Reducing Atmosphere

Abstract ANACONDA Alloy 1870 is a free-cutting high-conductivity copper. It is a deoxidized copper with lead added to impart free-cutting properties. The various and unusual properties of Alloy 1870 make it suitable for many applications in the manufacture of parts machined from rods and for current-carrying studs, nuts and bolts designed for use at normal temperatures. Because it is deoxidized, it is not susceptible to hydrogen embrittlement if heated in a reducing atmosphere. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and shear strength. It also includes information on corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: Cu-318. Producer or source: Anaconda American Brass Company.

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