Planarization with Cyclotene™ 3022 (BCB) Polymer Coatings

1993 ◽  
Vol 308 ◽  
Author(s):  
T.M. Stokich ◽  
C.C. Fulks ◽  
M.T. Bernius ◽  
D.C. Burdeaux ◽  
P.E. Garrou ◽  
...  

ABSTRACTThis work examines the planarization of polymer thin film coatings derived from Cyclotene™ 3022 prepolymer resins. Cyclotene™ 3022 is a divinyl siloxane bis-benzocyclobutene prepolymer (DVS-BCB, CAS 117732-87-3). It is used primarily as a dielectric in microelectronics applications.Using profilometry, planarization measurements have been made on thin films spun over features consisting of lines and trenches. Feature widths have been varied from 2 to 1000 μm and the feature depths and film thickness have been varied from 1 to 16 μm. Effects of the processing procedure, resin concentration and resin additives have been explored. Local (versus global) planarization will be discussed.Planarization has been found to depend on all feature dimensions and the polymer film thickness. Lines or other structures having a width of 100 μm or less can be planarized to 90% or better with standard commercial formulations of Cyclotene™ 3022, provided that the mean film thickness is twice the line-height or feature-depth. Metals such as Al, Cu, Cr and Ti can all be planarized to this degree; however, surface preparations may influence the result.

2019 ◽  
Vol 27 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Akshatha Nagaraja ◽  
Yashoda Malgar Puttaiahgowda ◽  
Ananda Kulal ◽  
Ajithkumar Manayan Parambil ◽  
Thivaharan Varadavenkatesan

2008 ◽  
Vol 24 (3) ◽  
pp. 714-719 ◽  
Author(s):  
X. Tong ◽  
A. Trivedi ◽  
H. Jia ◽  
M. Zhang ◽  
P. Wang

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2005 ◽  
Author(s):  
Thilo Sandner ◽  
Jan Uwe Schmidt ◽  
Harald Schenk ◽  
Hubert Lakner ◽  
Minghong Yang ◽  
...  

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