Crystallization of Amorphous Germanium in a Silver Germanium Layered System
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ABSTRACTWe studied crystallization of amorphous germanium (a-Ge) induced in a Ag/a-Ge layered system, using in situ transmission electron microscopy (TEM) and differential scanning calorimetry (DSC). Amorphous Ge was found to crystallize at about 270°C with the heat of reaction of 10±lkJ/mol. In situ TEM revealed that Ag grains migrate into the a-Ge phase leaving the crystalline Ge (c-Ge) phase behind. From this observation, we propose a model whereby the Ag provides the fastest path for the Ge atoms to diffuse from a-Ge to c-Ge phases.
2009 ◽
Vol 24
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pp. 39-49
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2020 ◽
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pp. 22-29
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pp. 4339-4345
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