Excimer Laser Annealing of Amorphous Silicon Films

1994 ◽  
Vol 336 ◽  
Author(s):  
J. Viatella ◽  
R.K. Singh ◽  
R.P.S. Thakur
Keyword(s):  
Grain Size ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Layer ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Active Matrix ◽  
Average Temperature ◽  
Low Temperature Processing

ABSTRACTLow temperature processing is necessary for the fabrication of thin-film transistors for electronics-on-glass applications, including active matrix flat-panel displays. One method to achieve this involves the use of pulsed excimer-laser annealing of an Amorphous silicon layer on top of an SiO2 layer. The intense UV laser is absorbed in the Amorphous silicon region, Maintaining a low average temperature. The thickness of the underlying SiO2 layer affects the solidification velocity and hence the grain size of the annealed layer. Previous work has concluded that the resultant grain size is small (<100 nm) and further work is needed in finding ways of increasing grain size. This paper describes how grain size is affected by varying the thickness of the SiO2 layer. Correlations will be discussed.between the solidification velocities and grain size as affected by the varying thickness of the SiO2 layer. The paper includes a comparison between experimental and theoretical results, using equations based on energy balance considerations.

Large-Grain Doped Poly-Si Films Fabricated Using New Excimer Laser Annealing Technique

1992 ◽  
Vol 283 ◽  
Author(s):  
Hiroshi Iwata ◽  
Tomoyuki Nohda ◽  
Satoshi Ishida ◽  
Takashi Kuwahara ◽  
Keiichi Sano ◽  
...  
Keyword(s):  
Grain Size ◽  
Sheet Resistance ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solidification Velocity ◽  
Excimer Laser Annealing ◽  
Arf Excimer Laser ◽  
Si Films

ABSTRACTThe grain size of phosphorous (P)-doped poly-Si film has been enlarged to about 5000 Å by controlling the solidification velocity of molten Si during ArF excimer laser annealing. The drastically enlarged grain has few defects inside the grain. It has been confirmed that control of the solidification velocity is effective for P-doped poly-Si similar to the case of non-doped poly-Si films. In addition, a sheet resistance of 80 Ω/□ (ρ = 4 × 10-4 Ω · cm) has been achieved for very thin (500 Å) films by recrystallizing PECVD P-doped a-Si films.

Lateral Grain Growth in the Excimer Laser Crystallization of Poly-Si

1994 ◽  
Vol 321 ◽  
Author(s):  
H. Kuriyama ◽  
K. Sano ◽  
S. Ishida ◽  
T. Nohda ◽  
Y. Aya ◽  
...  
Keyword(s):  
Grain Size ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Excimer Laser Annealing ◽  
Short Processing Time ◽  
Low Temperature Processing ◽  
Excimer Laser Crystallization ◽  
Annealing Method

ABSTRACTWe have succeeded in obtaining nondoped, thin poly-Si film (thickness ∼500Å) with excellent crystallinity and large grain size (Maximum grain size ∼4.5 μ m) by an excimer laser annealing Method, which offers the features of low-temperature processing and a short processing time. The grain size distribution shrinks in the region around 1.5 μ m and this poly-Si film exhibits a strong (111) crystallographic orientation. Poly-Si thin film transistors using these films show quite a high field effect mobility of 440cm2/V · s below 600°C process.

Behavior of Hydrogen in Excimer Laser Annealing of Hydrogen-Modulation-Doped Amorphous Silicon Layer

2008 ◽  
Vol 47 (3) ◽  
pp. 1853-1857 ◽  
Author(s):  
Akira Heya ◽  
Tadashi Serikawa ◽  
Naoya Kawamoto ◽  
Naoto Matsuo
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Layer ◽  
Excimer Laser Annealing

Enlargement of Grain Size and Location Control of Grain in Excimer-laser Crystallization of Si Film

2006 ◽  
Vol 910 ◽  
Author(s):  
Wenchang Yeh ◽  
Dunyuan Ke ◽  
Chunjun Zhuang
Keyword(s):  
Grain Size ◽  
Light Beam ◽  
Excimer Laser ◽  
Conventional Method ◽  
Growth Process ◽  
Laser Annealing ◽  
Glass Structure ◽  
Control Technique ◽  
Back Side ◽  
Excimer Laser Annealing

AbstractA technique for enlargement of grain size were shown and a technique for location controlled super lateral growth (SLG) grain in excimer laser annealing (ELA) were proposed and realized. In the technique for grain size enlargement, the grain size was enlarged to 10£gm that is more than 10 times larger than that in conventional method(~0.8£gm). The proposed sample structure was Si film/light absorptive film/Glass structure with applying the laser light from the back side of glass substrate. Time resolved(~1ns) optical measurement (TROM) revealed that the melt duration of Si film was increased to 800ns that is also 10 times longer than that in conventional method. As for the grain location control technique, a new method contains pre seeding process and post growth process were proposed and realized. In the pre seeding process, micro light beam(£g-light beam) was exposed to Si film to form a grain within the crystallized spot. £g-light beam was formed by micro-lens-array(MLA). After post growth process, single grain array with the diameters of 6£gm was formed in a period of 10£gm.

Nucleation Process During Excimer Laser Annealing of Amorphous Silicon Thin Films on Glass: A Molecular-dynamics Study

2006 ◽  
Vol 958 ◽  
Author(s):  
Shinji Munetoh ◽  
Takanori Mitani ◽  
Takahide Kuranaga ◽  
Teruaki Motooka
Keyword(s):  
Thin Films ◽  
Molecular Dynamics ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Surface Region ◽  
Excimer Laser Annealing ◽  
Silicon Thin Films ◽  
Steady State Temperature ◽  
Dynamics Simulations

ABSTRACTWe have performed molecular-dynamics simulations of heating, melting and recrystallization processes in amorphous silicon (a-Si) thin films deposited on glass during excimer laser annealing. By partially heating the a-Si surface region with 2 nm depth and removing thermal energy from the bottom of the glass substrate, a steady-state temperature profile was obtained in the a-Si layer with the thickness of 15 nm and only the surface region was melted. It was found that nucleation predominantly occurred in the a-Si region as judged by the coordination numbers and diffusion constants of atoms in the region. The results suggest that nucleation occurs in unmelted residual a-Si region during the laser irradiation and then crystal growth proceeds toward liquid Si region under the near-complete melting condition.

Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film Transistor

1991 ◽  
Vol 30 (Part 1, No. 12B) ◽  
pp. 3700-3703 ◽  
Author(s):  
Hiroyuki Kuriyama ◽  
Seiichi Kiyama ◽  
Shigeru Noguchi ◽  
Takashi Kuwahara ◽  
Satoshi Ishida ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Excimer Laser ◽  
High Performance ◽  
Laser Annealing ◽  
Thin Film Transistor ◽  
Excimer Laser Annealing ◽  
Si Thin Film

Effects of Excimer Laser Annealing Process on the Ni-Sputtered Amorphous Silicon Film

2010 ◽  
Vol 13 (10) ◽  
pp. H346 ◽  
Author(s):  
Moojin Kim ◽  
GuangHai Jin ◽  
Hoonkee Min ◽  
HoKyoon Chung ◽  
Sangsoo Kim ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Silicon Film ◽  
Annealing Process ◽  
Excimer Laser Annealing ◽  
Amorphous Silicon Film

Single shot excimer laser annealing of amorphous silicon: effect of hydrogen on the properties of the poly silicon

1995 ◽  
Vol 397 ◽  
Author(s):  
P. Boher ◽  
M. Stehle ◽  
B. Godard ◽  
J.L. Stehle
Keyword(s):  
Thermal Treatment ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Low Cost ◽  
Structural Quality ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Medium Temperature ◽  
Glass Substrates

ABSTRACTPECVD amorphous silicon films deposited at different temperatures on low cost glass substrates have been treated by a Single Shot Excimer Laser Annealing (SSELA) at various energy densities. The influence of a thermal treatment at medium temperature (400°C) prior to the SSELA treatment was also investigated. Spectroscopie ellipsometry and Raman characterizations show that hydrogen contamination produces an important roughness increase with very little polycrystalline grains (650nm) after laser treatment. The thermal treatment prior laser annealing improves drastically the structural quality of the films. Structural results are correlated with the electrical performances of the TFT produced on these films.

Single shot excimer laser annealing of amorphous silicon for AMLCD

1996 ◽  
pp. 376-383
Author(s):  
Pierre Boher ◽  
Jean Louis Stehle ◽  
Marc Stehle ◽  
Bruno Godard
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Single Shot ◽  
Excimer Laser Annealing
Sign in / Sign up

Export Citation Format

Share Document