Optical Properties of Metal Films and Their Silicides

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Simard-Normandin ◽  
A. Naem ◽  
M. Saran

ABSTRACTSilicides are used widely in microelectronic fabrication, yet there are very little data available regarding their optical constants at most wavelengths, and specifically at those of interest to G-line and I-line lithography. We have studied extensively the optical properties of Ti, Co, as metal films and as silicide films formed at various temperatures, and of CVD (chemical vapour deposition) W. Using spectroscopic ellipsometry at two angles of incidence, we have calculated the complex index of refraction N = (n, k) of these films every 10nm at 68 wavelengths between 230 and 900nm. These data are necessary to model accurately the reflectivity of wafers to study the effects of various thermal and surface treatments on silicide growth and to set exposure times for lithography. They also allow the use of reflectivity vs X as a non-contact method to map film thicknesses across wafers within the patterned devices themselves.

2016 ◽  
Vol 34 (4) ◽  
pp. 868-871 ◽  
Author(s):  
Wojciech Kijaszek ◽  
Waldemar Oleszkiewicz ◽  
Adrian Zakrzewski ◽  
Sergiusz Patela ◽  
Marek Tłaczała

AbstractIn this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4/98%N2), nitrous oxide (N2O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.


1987 ◽  
Vol 2 (5) ◽  
pp. 645-647 ◽  
Author(s):  
Shuhan Lin ◽  
Shuguang Chen

Optical properties of plasma-deposited amorphous hydrogenated carbon films were studied by spectroscopic ellipsometry. From the ellipsometry data, the real and imaginary parts, n and k, of the complex index of refraction of the film have been deduced for photon energies between 2.0 and 4.0 eV for as-grown as well as for thermally annealed films. Here n and k showed considerable variation with subsequent annealing, even under 400°C. A tentative explanation of the results is proposed.


2002 ◽  
Vol 722 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  

AbstractWe present a systematic study on the nonlinear optical properties of silicon nanocrystals (Si-nc) grown by plasma enhanced chemical vapour deposition (PECVD). The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ(3) of Si-nc are measured by Z-scan method. While the closed aperture Z-scan reveals a sign of positive nonlinearity, the open aperture measurements suggests a nonlinear absorption coefficients. Absolute values of χ(3) are in the order of 10-9 esu and show systematic correlation with the Si-nc size, due to quantum confinement related effects.


2006 ◽  
Vol 17 (3) ◽  
pp. 664-667 ◽  
Author(s):  
H H Yao ◽  
Y T Wang ◽  
M C Ou-yang ◽  
H C Kuo ◽  
S C Wang ◽  
...  

1968 ◽  
Vol 46 (16) ◽  
pp. 1753-1761 ◽  
Author(s):  
M. Verschueren

The magneto-optical properties of a system subject to an optical and a radio-frequency radiation are calculated. The frequency of both radiations is close to the resonance frequencies of the system and as such they have a strong effect on its properties. The frequency shifts induced by optical radiation are obtained. Relations between the complex index of refraction and the frequency shifts are discussed.


2011 ◽  
Vol 687 ◽  
pp. 647-650
Author(s):  
Nan Chun Wu ◽  
Yi Ben Xia ◽  
Lin Jun Wang

With electron assisted chemical vapour deposition technology, some nanocrystalline diamond films have been deposited, which precipitate polycyclic aromatic clusters in the film matrix. Optical properties of the films have been characterized. The results of characteristics show that Raman and photoluminescence spectrum of the films conform to identity of pyrene except for diamond peaks; photoluminescence emission spectrum of the films show stronger emission peaks at 385nm and 470nm. Our results show that purer polycyclic aromatic clusters of four fused sixfold ring, which are the same as pyrene in structure, can form in the nanocrystalline diamond film matrix by bombarding the films with electrons.


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