scholarly journals Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

2016 ◽  
Vol 34 (4) ◽  
pp. 868-871 ◽  
Author(s):  
Wojciech Kijaszek ◽  
Waldemar Oleszkiewicz ◽  
Adrian Zakrzewski ◽  
Sergiusz Patela ◽  
Marek Tłaczała
Keyword(s):  
Optical Properties ◽  
Optical Constants ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Deposition Process ◽  
Silicon Oxynitride ◽  
Radio Frequency Plasma ◽  
Frequency Plasma ◽  
The Relationship ◽  
Deposited Film

AbstractIn this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiOxNy films. The optical constants of SiOxNy films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH3), diluted silane (2%SiH4/98%N2), nitrous oxide (N2O) and nitrogen (N2). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.

Optical Properties of Metal Films and Their Silicides

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Simard-Normandin ◽  
A. Naem ◽  
M. Saran
Keyword(s):  
Optical Properties ◽  
Optical Constants ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Metal Films ◽  
Index Of Refraction ◽  
Contact Method ◽  
Microelectronic Fabrication ◽  
Silicide Growth ◽  
Complex Index Of Refraction

ABSTRACTSilicides are used widely in microelectronic fabrication, yet there are very little data available regarding their optical constants at most wavelengths, and specifically at those of interest to G-line and I-line lithography. We have studied extensively the optical properties of Ti, Co, as metal films and as silicide films formed at various temperatures, and of CVD (chemical vapour deposition) W. Using spectroscopic ellipsometry at two angles of incidence, we have calculated the complex index of refraction N = (n, k) of these films every 10nm at 68 wavelengths between 230 and 900nm. These data are necessary to model accurately the reflectivity of wafers to study the effects of various thermal and surface treatments on silicide growth and to set exposure times for lithography. They also allow the use of reflectivity vs X as a non-contact method to map film thicknesses across wafers within the patterned devices themselves.

Effect of pre-deposited carbon layer on the formation of carbon nitride nanostructures prepared by radio-frequency plasma enhanced chemical vapour deposition

2011 ◽  
Vol 130 (1-2) ◽  
pp. 218-222 ◽  
Author(s):  
Noor Hamizah Khanis ◽  
Richard Ritikos ◽  
Maisara Othman ◽  
Nur Maisarah Abdul Rashid ◽  
Siti Meriam Ab Gani ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Chemical Vapour Deposition ◽  
Carbon Nitride ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Carbon Layer ◽  
Radio Frequency Plasma ◽  
Frequency Plasma

Growth and Composition of LPCVD Silicon Oxynitride Films

1985 ◽  
Vol 48 ◽  
Author(s):  
F. H. P. M. Habraken ◽  
A. E. T. Kuiper
Keyword(s):  
Chemical Vapour Deposition ◽  
Growth Kinetics ◽  
Vapour Deposition ◽  
Ion Beam ◽  
Chemical Vapour ◽  
Deposition Process ◽  
High Energy ◽  
Silicon Oxynitride ◽  
Chemical Compositions ◽  
Pressure Chemical

ABSTRACTSilicon oxynitride films with various O/N concentration ratios were deposited in a Low Pressure Chemical Vapour Deposition process from SiH2Cl2, N2O and NH3 or ND3. The resulting films were analysed with respect to their chemical compositions using a number of high energy ion beam methods. The results of the analysis are related to the growth kinetics. It is suggested that the SiH2Cl2 decomposes more difficult on growth surfaces which contain more oxygen. The effect is attributed to the larger electronegativity of oxygen compared to nitrogen.

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