Large Area Flexible Amorphous Silicon Position Sensitive Detectors

2000 ◽  
Vol 609 ◽  
Author(s):  
Elvira M.C. Fortunato ◽  
Donatello Brida ◽  
Isabel M.M. Ferreira ◽  
H. M.B. Åguas ◽  
Patrícia Nunes ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Open Circuit ◽  
Large Area ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Chemical Vapour Deposition Technique ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTLarge area thin film position sensitive detectors based on amorphous silicon technology have been prepared on polyimide substrates using the conventional plasma enhanced chemical vapour deposition technique. The sensors have been characterised by spectral response, illuminated I-V characteristics and position detectability measurements. The obtained one dimensional position sensors with 5 mm wide and 60 mm long present a maximum spectral response at 600 nm, an open circuit voltage of 0.6 V and a position detectability with a correlation of 0.9989 associated to a standard deviation of 1×10−2, comparable to those ones produced on glass substrates. The surface of the sensors at each stage of fabrication was investigated by Atomic Force Microscopy.

Performances presented by large-area thin film position-sensitive detectors based on amorphous silicon

1996 ◽  
Vol 272 (1) ◽  
pp. 148-156 ◽  
Author(s):  
Elvira Fortunato ◽  
Guilherme Lavareda ◽  
Fernando Soares ◽  
Rodrigo Martins
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

Detection Limit of Large Area Id Thin Film Position Sensitive Detectors Based in a-Si:H P.I.N. Diodes

1995 ◽  
Vol 377 ◽  
Author(s):  
R. Martins ◽  
G. Lavareda ◽  
F. Soares ◽  
E. Fortunato
Keyword(s):  
Thin Film ◽  
Experimental Data ◽  
Steady State ◽  
Detection Limit ◽  
Large Area ◽  
Position Sensitive ◽  
Position Sensitive Detectors

ABSTRACTThe aim of this work is to provide the basis for the interpretation of the steady state lateral photoeffect observed in p-i-n a-Si:H ID Thin Film Position Sensitive Detectors (ID TFPSD). The experimental data recorded in ID TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.

Large Grained, Low Defect Density Polycrystalline Silicon on Glass Substrates by Large-area Diode Laser Crystallisation

2012 ◽  
Vol 1426 ◽  
pp. 251-256 ◽  
Author(s):  
Bonne Eggleston ◽  
Sergey Varlamov ◽  
Jialiang Huang ◽  
Rhett Evans ◽  
Jonathon Dore ◽  
...  
Keyword(s):  
Diode Laser ◽  
Polycrystalline Silicon ◽  
Crystalline Silicon ◽  
Defect Density ◽  
Open Circuit ◽  
Large Area ◽  
High Quality ◽  
Glass Substrates ◽  
Silicon Thin Films ◽  
Open Circuit Voltages

ABSTRACTA new method to form high quality crystalline silicon thin films on cheap glass substrates is developed using a single pass of a line-focus cw diode laser in air. The laser process results in the formation of large high-quality crystals as they grow laterally in the scan direction – seeded by the previously crystallised region. Grains 10 μm in thickness, up to millimetres in length and hundreds of microns in width have been grown with virtually zero detectable intragrain defects. Another mode is found which results in much smaller crystals grown by partial melting. The dominant grain boundaries identified are Σ3 <111> 60° twins. Hall mobilities as high as 470 cm2/Vs have been recorded. A diffused emitter is used to create a p-n junction at the rear of the films which produces open-circuit voltages as high as 539 mV.

Insights on Amorphous Silicon Nip and MIS 3D Position Sensitive Detectors

2006 ◽  
Vol 514-516 ◽  
pp. 13-17 ◽  
Author(s):  
Rodrigo Martins ◽  
Daniel Costa ◽  
Hugo Águas ◽  
Fernanda Soares ◽  
António Marques ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Image Resolution ◽  
Mis Structure ◽  
Silicon Thin Film ◽  
One Dimensional ◽  
Operation Conditions ◽  
Plane Image ◽  
Position Sensitive ◽  
Position Sensitive Detectors ◽  
Better Than

This work aims to report results of the spatial and frequency optical detection limits of integrated arrays of 32 one-dimensional amorphous silicon thin film position sensitive detectors with nip or MIS structure, under continuous and pulsed laser operation conditions. The arrays occupy a total active area of 45 mm2 and have a plane image resolution better than 15 m with a cut-off frequency of about 6.8 kHz. The non-linearity of the array components varies with the frequency, being about 1.6% for 200 Hz and about 4% for the cut-off frequency (6.8 kHz).

Hyperacuity Image Sensors

1995 ◽  
Vol 377 ◽  
Author(s):  
David K. Biegelsen ◽  
Warren B. Jackson ◽  
René Lujan ◽  
David Jared ◽  
Richard L. Weisfield
Keyword(s):  
Amorphous Silicon ◽  
Image Sensors ◽  
Gray Level ◽  
Silicon Sensors ◽  
Sensor Processing ◽  
Position Sensitive ◽  
The Individual ◽  
Position Sensitive Detectors ◽  
Silicon Sensor ◽  
Average Gray Level

ABSTRACTThe human visual system perceives much smaller spatial steps in edges between high contrast regions than equivalents fine, periodic features. This characteristic is known as hyperacuity. We have designed, simulated, fabricated and characterized amorphous silicon sensors which provide hyperacuity information. The individual pixels are position sensitive detectors, the outputs of which provide the x and y first moments of the cell illumination pattern as well as the average gray level. In the simplest case the top electrode of a standard p-i-n diode sensor is replaced by four edge strip electrodes. Both quadrilateral cells (having all four lateral electrodes on the same side of the p-i-n diode) and duolateral cells (having x-electrodes on top and y-electrodes on bottom) have been tested. Results of probing the cells with rastered spots show that both types provide usable linearity and sensitivity. The duolateral structure provides greater orthogonality of the x and y information. One μm spatial resolution can be achieved with devices compatible with standard amorphous silicon sensor processing.

Carrier Transport and Photogeneration in Amorphous Silicon / Crystalline Silicon Heterojunctions with i/n and p/n Interfaces

2000 ◽  
Vol 609 ◽  
Author(s):  
Yu. Vygranenko ◽  
M. Fernandes ◽  
C. Nunes Carvalho ◽  
G. Lavareda ◽  
P. Louro ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Collection Efficiency ◽  
Spectral Response ◽  
Chemical Vapour ◽  
Amorphous Film ◽  
Amorphous Layer ◽  
Hydrogen Treatment ◽  
Internal Gain

ABSTRACTAmorphous hydrogenated silicon films deposited by Plasma Enhanced Chemical Vapour Deposition (PE-CVD) using standard rf-glow discharge at 13.56 MHz were used to produce amorphous silicon heterostructures. Junction properties were studied from current-voltage (IV), capacitance-voltage (C-V) and spectral response measurements. The photosensitivity of these structures was investigated for different amorphous film thicknesses and different applied bias voltages. It was shown that the output device characteristics could be improved by plasma hydrogen treatment before the deposition of the amorphous layer. The results show that ITO/a-Si:H/c-Si structures present high internal gain in the visible infra-red region and high collection efficiency in the blue range. They can be used as visible/near-IR photodiodes or for current amplifications proposes.

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