Submilliamp 1.3 [micro sign]m vertical-cavity surface-emitting lasers with threshold current density of < 500 A/cm2

1997 ◽  
Vol 33 (12) ◽  
pp. 1052 ◽  
Author(s):  
Y. Qian ◽  
Z.H. Zhu ◽  
Y.H. Lo ◽  
D.L. Huffaker ◽  
D.G. Deppe ◽  
...  
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Low Threshold Current Density Operation of 1.16 µm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate

2002 ◽  
Vol 41 (Part 2, No. 5B) ◽  
pp. L562-L564 ◽  
Author(s):  
Takashi Kondo ◽  
Masakazu Arai ◽  
Munechika Azuchi ◽  
Takeshi Uchida ◽  
Akihiro Matsutani ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Highly Strained ◽  
Vertical Cavity

Design Consideration of GaN-Based Surface Emitting Lasers

1996 ◽  
Vol 449 ◽  
Author(s):  
T. Honda ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Design Consideration ◽  
Micro Fabrication ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity

ABSTRACTThe threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.

THERMAL EFFECTS IN VERTICAL-CAVITY SURFACE-EMITTING LASERS

1994 ◽  
Vol 05 (04) ◽  
pp. 667-730 ◽  
Author(s):  
MAREK OSIŃSKI ◽  
WŁODZIMIERZ NAKWASKI
Keyword(s):  
Thermal Modeling ◽  
Longitudinal Mode ◽  
Transverse Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Relative Distribution ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

A comprehensive review of temperature-related effects and thermal modeling of vertical-cavity surface-emitting lasers (VCSELs) is presented. The paper is divided into two major parts. First, the effects of temperature on device characteristics are discussed, including the temperature dependence of the longitudinal mode spectra, the threshold current, the transverse-mode structure, and the output power. A new condition is formulated for thermal matching of the Bragg mirrors and the spacer region and a comparison is made between characteristic temperatures for the threshold current (T0) and for the external quantum efficiency (Tη). In the second part, various approaches to thermal modeling of VCSELs are described. Both simplified and comprehensive thermal models are considered and both analytical and numerical approaches are discussed. A new analytical approximate method for analysis of heat-flux spreading in multilayer structures is described. The most important results obtained with the aid of these models are presented. In particular, we show that the current dependence of thermal resistance is very sensitive to VCSEL structure, and is strongly influenced by the relative distribution of heat sources and their location with respect to the heat sink.

Low-threshold-current-density vertical-cavity surface-emitting AlGaAs/GaAs diode lasers

1989 ◽  
Vol 1 (8) ◽  
pp. 205-208 ◽  
Author(s):  
D. Botez ◽  
L.M. Zinkiewicz ◽  
T.J. Roth ◽  
L.J. Mawst ◽  
G. Peterson
Keyword(s):  
Current Density ◽  
Diode Lasers ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Vertical Cavity

Ultralow threshold current vertical-cavity surface-emitting lasers with AlAs oxide-GaAs distributed Bragg reflectors

1995 ◽  
Vol 7 (3) ◽  
pp. 229-231 ◽  
Author(s):  
M.H. MacDougal ◽  
P.D. Dapkus ◽  
V. Pudikov ◽  
Hanmin Zhao ◽  
Gye Mo Yang
Keyword(s):  
Threshold Current ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation

1995 ◽  
Vol 31 (11) ◽  
pp. 886-888 ◽  
Author(s):  
G.M. Yang ◽  
M.H. MacDougal ◽  
P.D. Dapkus
Keyword(s):  
Selective Oxidation ◽  
Threshold Current ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

Single mode photonic crystal vertical cavity surface emitting lasers with modulation bandwidth > 13 GHz at low current density

2012 ◽  
Author(s):  
Meng Peun Tan ◽  
Stewart T. Fryslie ◽  
James A. Lott ◽  
Nikolay. N. Ledentov ◽  
Kent D. Choquette
Keyword(s):  
Photonic Crystal ◽  
Current Density ◽  
Single Mode ◽  
Cavity Surface ◽  
Modulation Bandwidth ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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