Ultralow threshold current vertical-cavity surface-emitting lasers obtained with selective oxidation

1995 ◽  
Vol 31 (11) ◽  
pp. 886-888 ◽  
Author(s):  
G.M. Yang ◽  
M.H. MacDougal ◽  
P.D. Dapkus
1994 ◽  
Vol 05 (04) ◽  
pp. 667-730 ◽  
Author(s):  
MAREK OSIŃSKI ◽  
WŁODZIMIERZ NAKWASKI

A comprehensive review of temperature-related effects and thermal modeling of vertical-cavity surface-emitting lasers (VCSELs) is presented. The paper is divided into two major parts. First, the effects of temperature on device characteristics are discussed, including the temperature dependence of the longitudinal mode spectra, the threshold current, the transverse-mode structure, and the output power. A new condition is formulated for thermal matching of the Bragg mirrors and the spacer region and a comparison is made between characteristic temperatures for the threshold current (T0) and for the external quantum efficiency (Tη). In the second part, various approaches to thermal modeling of VCSELs are described. Both simplified and comprehensive thermal models are considered and both analytical and numerical approaches are discussed. A new analytical approximate method for analysis of heat-flux spreading in multilayer structures is described. The most important results obtained with the aid of these models are presented. In particular, we show that the current dependence of thermal resistance is very sensitive to VCSEL structure, and is strongly influenced by the relative distribution of heat sources and their location with respect to the heat sink.


2012 ◽  
Vol 21 (3) ◽  
pp. 034206 ◽  
Author(s):  
Zhen-Bo Zhao ◽  
Chen Xu ◽  
Yi-Yang Xie ◽  
Kang Zhou ◽  
Fa Liu ◽  
...  

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2740-2744
Author(s):  
W. L. LIU ◽  
L. LI ◽  
J. C. ZHONG ◽  
Y. J. ZHAO ◽  
L. N. ZENG ◽  
...  

Novel distributed Bragg reflectors (DBRs) with 6-pair- GaAs/AlAs short period superlattice for the oxide-confined vertical-cavity surface-emitting lasers (VCSEL) are designed. They are for the VCSEL that emits at 840 nm and is grown with 34-period n-type mirrors, three-quantum-well active region, and 22-period p-type mirrors. In addition, a 35-nm-layer of Al 0.98 Ga 0.02 As was inserted in the top mirrors for being selectively oxidized. The maximum output power is more than 2 mW with low threshold current of about 2 mA. The fact that the device's threshold current in both CW and pulsed operation depends slightly on the operation temperature shows its higher characteristic temperature (T0).


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